NTTD2P02R2/D [ETC]
Power MOSFET -2.4 Amps， -20 Volts ; 功率MOSFET -2.4安培，伏特-20\n
| 型号： | NTTD2P02R2/D |
| 厂家： | 
ETC |
| 描述： | Power MOSFET -2.4 Amps， -20 Volts
|
| 文件： | 总8页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTTD2P02R2
Power MOSFET
-2.4 Amps, -20 Volts
Dual P–Channel Micro8
Features
• Ultra Low R
DS(on)
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• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Micro–8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Micro8 Mounting Information Provided
–2.4 AMPERES
–20 VOLTS
R
= 90 mW
DS(on)
Applications
• Power Management in Portable and Battery–Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
P–Channel
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
V
–20
V
V
DSS
Gate–to–Source Voltage – Continuous
V
"8.0
GS
G
Thermal Resistance –
Junction–to–Ambient (Note 1.)
R
P
D
I
I
160
0.78
–2.4
–1.92
–20
°C/W
W
A
A
A
θJA
S
Total Power Dissipation @ T = 25°C
A
Continuous Drain Current @ T = 25°C
A
D
D
Continuous Drain Current @ T = 70°C
A
MARKING
Pulsed Drain Current (Note 3.)
I
DM
DIAGRAM
Thermal Resistance –
Junction–to–Ambient (Note 2.)
Total Power Dissipation @ T = 25°C
Continuous Drain Current @ T = 25°C
Continuous Drain Current @ T = 70°C
Pulsed Drain Current (Note 3.)
8
R
P
D
I
I
88
1.42
–3.25
–2.6
–30
°C/W
W
A
A
A
θJA
A
1
A
A
D
D
YWW
BE
Micro8
CASE 846A
STYLE 2
I
DM
T , T
Operating and Storage
Temperature Range
–55 to
+150
°C
J
stg
Single Pulse Drain–to–Source Avalanche
E
AS
350
mJ
Energy – Starting T = 25°C
Y
= Year
J
(V
= –20 Vdc, V
= –4.5 Vdc,
WW
BE
= Work Week
= Device Code
DD
GS
Peak I = –5.0 Apk, L = 28 mH,
L
R
= 25 Ω)
G
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T
L
260
°C
PIN ASSIGNMENT
1. Minimum FR–4 or G–10 PCB, Steady State.
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Steady State.
Source 1
1
8
7
Drain 1
Drain 1
Drain 2
Drain 2
2
Gate 1
Source 2
Gate 2
3
4
6
5
3. Pulse Test: Pulse Width ꢀ 300 ms, Duty Cycle ꢀ 2%.
Top View
ORDERING INFORMATION
Device
Package
Shipping
4000/Tape & Reel
NTTD2P02R2
Micro8
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
December, 2000 – Rev. 0
NTTD2P02R2/D
NTTD2P02R2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) *
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Drain–to–Source Breakdown Voltage
V
Vdc
(BR)DSS
(V
GS
= 0 Vdc, I = –250 µAdc)
Temperature Coefficient (Positive)
–20
–
–
–
–
D
–12.7
mV/°C
µAdc
Zero Gate Voltage Drain Current
I
DSS
(V
GS
(V
GS
= 0 Vdc, V
= 0 Vdc, V
= –16 Vdc, T = 25°C)
–
–
–
–
–1.0
–25
DS
DS
J
= –16 Vdc, T = 125°C)
J
Zero Gate Voltage Drain Current
(V = 0 Vdc, V = –20 Vdc, T = 25°C)
I
µAdc
nAdc
nAdc
DSS
GSS
GSS
–
–
–
–
–
–
–5.0
–100
100
GS DS
J
Gate–Body Leakage Current
(V = –8 Vdc, V = 0 Vdc)
I
I
GS
Gate–Body Leakage Current
(V = +8 Vdc, V = 0 Vdc)
DS
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
Vdc
GS(th)
(V
DS
= V , I = –250 µAdc)
–0.5
–
–0.90
2.5
–1.4
–
GS
D
Temperature Coefficient (Negative)
mV/°C
Static Drain–to–Source On–State Resistance
R
Ω
DS(on)
(V
GS
(V
GS
(V
GS
= –4.5 Vdc, I = –2.4 Adc)
–
–
–
0.070
0.100
0.110
0.090
0.130
–
D
= –2.7 Vdc, I = –1.2 Adc)
D
= –2.5 Vdc, I = –1.2 Adc)
D
Forward Transconductance (V
DS
= –10 Vdc, I = –1.2 Adc)
g
2.0
4.2
–
Mhos
pF
D
FS
DYNAMIC CHARACTERISTICS
Input Capacitance
C
–
–
–
550
200
100
–
–
–
iss
(V
DS
= –16 Vdc, V
= 0 Vdc,
GS
f = 1.0 MHz)
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Notes 4. & 5.)
Turn–On Delay Time
t
–
–
–
–
–
–
–
–
–
–
–
10
31
33
29
15
40
35
35
10
1.5
5.0
–
–
ns
ns
d(on)
Rise Time
t
r
(V
V
= –10 Vdc, I = –2.4 Adc,
D
DD
GS
= –4.5 Vdc, R = 6.0 Ω)
G
Turn–Off Delay Time
Fall Time
t
t
t
–
d(off)
t
f
–
Turn–On Delay Time
Rise Time
–
d(on)
t
r
–
(V
V
= –10 Vdc, I = –1.2 Adc,
DD
D
= –2.7 Vdc, R = 6.0 Ω)
G
GS
Turn–Off Delay Time
Fall Time
–
d(off)
t
f
–
Total Gate Charge
Gate–Source Charge
Q
tot
Q
gs
Q
gd
18
–
nC
(V
V
= –16 Vdc,
= –4.5 Vdc,
= –2.4 Adc)
DS
GS
I
D
Gate–Drain Charge
–
BODY–DRAIN DIODE RATINGS (Note 4.)
Diode Forward On–Voltage
(I = –2.4 Adc, V
= 0 Vdc)
V
–
–
–0.88
–0.75
–1.0
–
Vdc
ns
S
GS
= 0 Vdc, T = 125°C)
SD
(I = –2.4 Adc, V
S GS
J
Reverse Recovery Time
t
–
–
–
–
37
16
–
–
–
–
rr
(I = –2.4 Adc, V
= 0 Vdc,
S
GS
dI /dt = 100 A/µs)
t
a
S
t
21
b
Reverse Recovery Stored Charge
Q
0.025
µC
RR
4. Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperature.
* Handling precautions to protect against electrostatic discharge is mandatory.
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2
NTTD2P02R2
4
3
2
1
0
5
V
= –2.1 V
T = 25°C
GS
J
V
> = 10 V
DS
V
V
V
= –10 V
= –4.5 V
= –2.5 V
GS
GS
GS
4
3
2
V
= –1.9 V
GS
V
V
= –1.7 V
= –1.5 V
T = 25°C
GS
J
1
0
GS
T = 100°C
J
T = 55°C
J
0
2
4
6
8
10
1
1.5
2
2.5
3
–V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
–V , GATE–TO–SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On–Region Characteristics.
Figure 2. Transfer Characteristics.
0.2
0.15
0.1
0.12
0.1
T = 25°C
T = 25°C
J
J
V
V
= –2.7 V
= –4.5 V
GS
0.08
0.06
0.04
GS
0.05
0
2
4
6
8
1
1.5
2
2.5
3
3.5
4
4.5
–V
GS,
GATE–TO–SOURCE VOLTAGE (VOLTS)
–I DRAIN CURRENT (AMPS)
D,
Figure 3. On–Resistance vs. Gate–to–Source
Voltage.
Figure 4. On–Resistance vs. Drain Current and
Gate Voltage.
1.6
1.4
1.2
1
1000
100
10
V
GS
= 0 V
I
= –2.4 A
= –4.5 V
D
T = 125°C
V
GS
J
T = 100°C
J
T = 25°C
J
1
0.8
0.1
0.01
0.6
–50 –25
0
25
50
75
100
125 150
0
4
8
12
16
20
T
J,
JUNCTION TEMPERATURE (°C)
–V DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS,
Figure 5. On–Resistance Variation with
Temperature.
Figure 6. Drain–to–Source Leakage Current
vs. Voltage.
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3
NTTD2P02R2
1500
1200
900
600
300
0
5
20
18
16
14
12
10
8
V
= 0 V
V
GS
= 0 V
DS
QT
C
T = 25°C
iss
4
3
2
J
V
GS
C
rss
Q1
Q2
C
iss
6
I
= –2.4 A
D
1
0
4
C
oss
C
rss
15
V
DS
T = 25°C
J
2
0
0
2
4
6
8
10
12
14
10
5
0
5
10
20
–V
GS
–V
DS
Q , TOTAL GATE CHARGE (nC)
g
GATE–TO–SOURCE OR DRAIN–TO–SOURCE
VOLTAGE (VOLTS)
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
Figure 7. Capacitance Variation
1000
100
t
d (off)
V
= –10 V
DD
I
= –1.2 A
D
V
GS
= –2.7 V
t
r
t
f
t
d(on)
10
100
t
r
t
f
t
d (off)
V
= –10 V
DD
I
= –2.4 A
D
V
GS
= –4.5 V
t
d (on)
1.0
10
10
GATE RESISTANCE (OHMS)
100
1.0
1.0
10
GATE RESISTANCE (OHMS)
100
R
R
G,
G,
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
2
1.6
1.2
0.8
V
= 0 V
GS
J
T = 25°C
di/dt
I
S
t
rr
t
b
t
a
TIME
0.25 I
t
p
S
I
0.4
0
S
0.4
0.5
0.6
0.7
0.8
0.9
1
Figure 12. Diode Reverse Recovery Waveform
–V
SD,
SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage
versus Current
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4
NTTD2P02R2
1
D = 0.5
0.2
Normalized to R
at Steady State (1 inch pad)
ja
0.1
0.1
0.0125 Ω 0.0563 Ω
0.110 Ω 0.273 Ω
0.113 Ω
0.436 Ω
0.05
0.02
0.01
0.021 F
0.137 F
1.15 F
2.93 F
152 F
261 F
Single Pulse
0.01
1E–03
1E–02
1E–01
1E+00
1E+03
1E+02
1E+03
t, TIME (s)
Figure 13. FET Thermal Response.
INFORMATION FOR USING THE Micro–8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self–align when
subjected to a solder reflow process.
0.041
1.04
0.208
5.28
0.126
3.20
0.015
0.38
0.0256
0.65
inches
mm
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5
NTTD2P02R2
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 14 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems, but it is a good starting point. Factors
that can affect the profile include the type of soldering
system in use, density and types of components on the
board, type of solder used, and the type of board or
substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density
board. The Vitronics SMD310 convection/infrared reflow
soldering system was used to generate this profile. The type
of solder used was 62/36/2 Tin Lead Silver with a melting
point between 177–189°C. When this type of furnace is
used for solder reflow work, the circuit boards and solder
joints tend to heat first. The components on the board are
then heated by conduction. The circuit board, because it has
a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may
be up to 30 degrees cooler than the adjacent solder joints.
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK” ZONES 2 & 5
“RAMP”
STEP 3
HEATING
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT
STEP 7
COOLING
205° TO 219°C
PEAK AT
SOLDER
JOINT
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
200°C
150°C
100°C
5°C
160°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
100°C
140°C
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 14. Typical Solder Heating Profile
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6
NTTD2P02R2
TAPE & REEL INFORMATION
Micro–8
Dimensions are shown in millimeters (inches)
1.60 (.063)
1.50 (.059)
2.05 (.080)
1.95 (.077)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
4.10 (.161)
3.90 (.154)
PIN
NUMBER 1
B
B
A
5.55 (.218)
5.45 (.215)
12.30
11.70
(.484)
(.461)
3.50 (.137)
3.30 (.130)
1.60 (.063)
1.50 (.059)
TYP.
1.50 (.059)
1.30 (.052)
A
FEED DIRECTION
8.10 (.318)
7.90 (.312)
SECTION A–A
5.40 (.212)
5.20 (.205)
SECTION B–B
NOTES:
1. CONFORMS TO EIA–481–1.
2. CONTROLLING DIMENSION: MILLIMETER.
18.4 (.724)
MAX.
NOTE 3
13.2 (.52)
12.8 (.50)
330.0
(13.20)
MAX.
50.0
(1.97)
MIN.
14.4 (.57)
12.4 (.49)
NOTE 4
NOTES:
1. CONFORMS TO EIA–481–1.
2. CONTROLLING DIMENSION: MILLIMETER.
3. INCLUDES FLANGE DISTORTION AT OUTER EDGE.
4. DIMENSION MEASURED AT INNER HUB.
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7
NTTD2P02R2
PACKAGE DIMENSIONS
Micro8
CASE 846A–02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–A–
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
–B–
K
MILLIMETERS
INCHES
PIN 1 ID
G
DIM MIN
MAX
3.10
3.10
1.10
MIN
MAX
0.122
0.122
0.043
0.016
D 8 PL
A
B
C
D
G
H
J
2.90
2.90
---
0.114
0.114
---
M
S
S
0.08 (0.003)
T B
A
0.25
0.40 0.010
0.65 BSC
0.026 BSC
0.05
0.13
4.75
0.40
0.15 0.002
0.23 0.005
5.05 0.187
0.70 0.016
0.006
0.009
0.199
0.028
SEATING
PLANE
–T–
K
L
C
0.038 (0.0015)
STYLE 2:
PIN 1. SOURCE 1
2. GATE 1
L
J
H
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
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NTTD2P02R2/D
相关型号：
NTTD4401FR2G
2400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 846A-02, MICRO-8
ROCHESTER
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