NTTFS115P10M5 [ONSEMI]
Power MOSFET, P Channel, -100V, -13 A, 120mΩ;
| 型号： | NTTFS115P10M5 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, P Channel, -100V, -13 A, 120mΩ |
| 文件： | 总7页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
P-Channel, WDFN8
-100 V, 120 mW, -13 A
NTTFS115P10M5
Features
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• Small Footprint (3.3 x 3.3 mm) for Compact Design
• These Devices are non−ESD Protected
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
120 mW @ −10 V
254 mW @ −6 V
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
−100 V
−13 A
Parameter
Drain−to−Source Breakdown Voltage
Gate−to−Source Voltage
Symbol
Value
−100
20
Unit
V
V
(BR)DSS
V
GS
V
Continuous Drain
Current R (Note 2)
T
= 25°C
= 100°C
= 25°C
I
−13
−8.0
41
A
C
D
S
S
1
2
8
7
D
D
q
JC
T
C
Steady
State
Power Dissipation
(Note 2)
T
C
P
W
A
D
R
q
JC
T
C
= 100°C
16
S
3
4
6
5
D
D
Continuous Drain
Current R
T = 25°C
A
I
D
−2.0
−1.1
0.9
q
JA
G
T = 100°C
A
(Notes 1, 2)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
0.3
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
−137
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
Source Current (Body Diode)
I
S
−34
A
Single Pulse Drain−to−Source Avalanche
E
AS
41
mJ
Energy (I
= −9.1 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
WDFN8
CASE 511DH
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3.0
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
R
134
q
JA
2
1. Surface−mounted on FR4 board using a 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2020 − Rev. 0
NTTFS115P10M5/D
NTTFS115P10M5
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
−100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
−67
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
−1
mA
DSS
GS
= −80 V
J
V
T = 125°C
J
−100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
V
V
= V , I = −45 mA
−2.0
−3.0
6.2
97
−4.0
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
I = 250 mA, ref to 25°C
D
mV/°C
mW
GS(TH)
R
V
GS
= −10 V
= −6 V
I
= −2.4 A
= −1.6 A
120
254
DS(on)
D
D
V
GS
I
127
5.5
3.5
Forward Transconductance
Gate−Resistance
g
FS
V
= −10 V, I = −2.1 A
S
DS
D
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = −50 V
637
93.5
4.5
5.7
9.2
3.0
1.3
4.4
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
= −6 V, V = −50 V, I = −2.4 A
G(TOT)
G(TOT)
GS DS D
Total Gate Charge
Q
V
= −10 V, V = −50 V,
GS DS
I
= −2.4 A
D
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
Q
GS
GD
GP
V
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
V
= −10 V, V = −50 V,
8.7
2.1
ns
d(ON)
GS
D
DS
I
= −2.4 A, R = 2.5 W
G
Rise Time
t
r
Turn−Off Delay Time
t
13.4
4.1
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.84
0.71
28.7
87.6
18.4
10.4
1.2
V
SD
GS
J
I
= −2.4 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Charge Time
t
V
GS
= 0 V, dIs/dt = 300 A/ms,
ns
nC
ns
ns
RR
I
S
= −1.2 A
Q
RR
t
a
Discharge Charge
t
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
4. Pulse Test: Pulse Width < 300 ms. Duty Cycle < 2%.
5. Maximum current for pulses as long as 1s is higher but is independent on pulse duration or duty cycles.
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2
NTTFS115P10M5
TYPICAL CHARACTERISTICS
20
15
10
15
V
= −10 V
−8.0 V
GS
V
DS
= −10 V
−6.0 V
10
−5.0 V
−4.0 V
5
0
5
0
T = 25°C
J
T = 125°C
J
T = −55°C
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
2
5
1
2
3
4
5
6
7
−V , DRAIN−TO−SOURCE VOLTAGE (V)
−V , GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1000
900
800
700
600
500
200
180
160
140
120
100
80
T = 25°C
J
I
D
= −2.4 A
V
GS
= −6 V
V
GS
= −10 V
400
300
200
100
0
60
40
T = 25°C
J
4
5
6
7
8
9
10
4
6
8
10
12
14
16
18
20
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2
1.5
1
1000
100
10
I
V
= −10 A
D
= −2.4 V
GS
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.5
0
1
0.1
−50 −25
0
25
50
75
100
125 150
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTTFS115P10M5
TYPICAL CHARACTERISTICS
1000
100
10
10
9
8
7
6
5
4
3
2
C
iss
C
oss
Q
Q
gd
gs
C
rss
T = 25°C
V
GS
= 0 V
J
V
I
= −50 V
T = 25°C
f = 1 MHz
DS
J
1
0
0
= −2.4 A
D
1
0.1
1
10
100
1
2
3
4
5
6
7
8
9
10
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
20
18
16
14
12
10
8
100
V
V
= −10 V
= −50 V
= −2.4 A
V
GS
= 0 V
GS
DS
I
D
t
d(off)
d(on)
10
t
6
t
t
f
4
2
0
0.2
r
T = 150°C T = 25°C
T = −55°C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.6
0.8
1.0
1.2
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
V
GS
≤ 10 V
Single Pulse
100
10
1
T
C
= 25°C
10 ms
10
100 ms
T
= 25°C
J(initial)
1 ms
T
= 100°C
J(initial)
10 ms
0.1
100 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
1 s
1
0.01
0.000001
0.00001
0.0001
0.001
0.01
1
10
100
TIME IN AVALANCHE (s)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. IPEAK vs. Time in Avalanche
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTTFS115P10M5
TYPICAL CHARACTERISTICS
1000
100
Duty Cycle = 50%
20%
10 10%
5%
2%
1%
1
0.1
0.01
Single Pulse
0.00001
0.001
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Thermal Response
DEVICE ORDERING AND MARKING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
Shipping
NTTFS115P10M5
115P10M5
WDFN8
(Pb−Free)
13”
12 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DH
ISSUE O
DATE 31 JUL 2016
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
3.30
(1.70)
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
0.65
0.42(8X)
2X
1.95
RECOMMENDED LAND PATTERN
0.75 0.05
0.10 C
0.15 0.05
0.08 C
0.025 0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO−229
B. DIMENSIONS ARE IN MILLIMETERS.
3.30 0.05
2.27 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
(0.35)
PIN #1 IDENT
0.50 0.05 (4X)
(0.79)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
(1.15)
3.30 0.05
2.00 0.05
R0.15
0.30 0.05 (3X)
8
5
0.35 0.05 (8X)
0.65
0.10
0.05
C A B
C
1.95
BOTTOM VIEW
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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