NTTFS4C13NTWG [ONSEMI]
Power MOSFET;
| 型号： | NTTFS4C13NTWG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总7页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTTFS4C13N
Power MOSFET
30 V, 38 A, Single N−Channel, m8FL
Features
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
http://onsemi.com
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Applications
9.4 mW @ 10 V
14 mW @ 4.5 V
• CPU Power Delivery
• DC−DC Converters
30 V
38 A
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
D (5−8)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
V
30
20
V
V
A
DSS
V
GS
Continuous Drain
Current R
T = 25°C
I
D
11.7
A
G (4)
q
JA
T = 80°C
A
8.5
(Note 1)
Power Dissipation
(Note 1)
T = 25°C
A
P
2.06
W
A
D
D
D
D
S (1,2,3)
N−CHANNEL MOSFET
R
q
JA
Continuous Drain
T = 25°C
A
I
15.8
11.4
3.73
D
Current R
(Note 1)
≤ 10 s
q
JA
T = 80°C
A
MARKING DIAGRAM
Power Dissipation
≤ 10 s (Note 1)
T = 25°C
A
P
I
W
A
1
1
R
q
JA
S
S
S
G
D
D
D
D
Steady
State
4C13
AYWWG
G
WDFN8
(m8FL)
CASE 511AB
Continuous Drain
Current R
T = 25°C
A
7.2
5.2
D
q
JA
T = 80°C
A
(Note 2)
Power Dissipation
(Note 2)
T = 25°C
A
P
I
0.78
W
A
R
q
JA
4C13
A
Y
= Specific Device Code
= Assembly Location
= Year
Continuous Drain
Current R
T
= 25°C
=80°C
= 25°C
38
27
C
D
q
JC
T
C
(Note 1)
Power Dissipation
(Note 1)
WW
G
= Work Week
= Pb−Free Package
T
C
P
21.5
W
A
R
q
JC
(Note: Microdot may be in either location)
Pulsed Drain
Current
T = 25°C, t = 10 ms
A
I
DM
68
p
Current Limited by Package
T = 25°C
A
I
70
A
Dmax
ORDERING INFORMATION
Operating Junction and Storage
Temperature
T ,
−55 to
+150
°C
J
†
Device
Package
Shipping
T
STG
NTTFS4C13NTAG
WDFN8
(Pb−Free)
1500 /
Tape & Reel
Source Current (Body Diode)
Drain to Source DV/DT
I
19
7.0
22
A
S
dV/d
V/ns
mJ
t
Single Pulse Drain−to−Source Avalanche
E
AS
NTTFS4C13NTWG
WDFN8
5000 /
Energy (T = 25°C, V = 10 V, I = 4 A ,
(Pb−Free)
Tape & Reel
J
GS
L
pk
L = 0.1 mH, R = 25 W) (Note 3)
GS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
T
260
°C
L
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is absolute maximum rating. Parts are tested at T = 25°C V = 10 V,
J
qs
I = 15 Apk, E = 11 mJ.
L
AS
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
June, 2014 − Rev. 1
NTTFS4C13N/D
NTTFS4C13N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
5.8
Unit
Junction−to−Case (Drain)
R
q
JC
q
JA
q
JA
q
JA
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
R
R
R
60.8
160
°C/W
33.5
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
34
V
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
(transient)
V
V
= 0 V, I
= TBD A,
= 100 ns
(BR)DSSt
GS
case
D(aval)
T
= 25°C, t
transient
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
14.9
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
1.0
10
DSS
GS
J
V
DS
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.3
2.1
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
4.8
7.5
11.2
40
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 30 A
= 12 A
9.4
14
DS(on)
GS
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
Gate Resistance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
R
T = 25°C
A
1.0
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
770
443
127
0.165
7.8
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 15 V
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Capacitance Ratio
C
C
/C
V = 0 V, V = 15 V, f = 1 MHz
GS DS
RSS ISS
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
Q
1.4
G(TH)
Q
2.9
V
= 4.5 V, V = 15 V; I = 30 A
GS
GD
GP
GS
DS
D
Q
V
3.7
3.6
V
Q
V
= 10 V, V = 15 V; I = 30 A
15.2
nC
G(TOT)
GS
DS
D
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTTFS4C13N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
9
d(ON)
t
r
35
13
5
V
= 4.5 V, V = 15 V,
DS
GS
ns
I
D
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
Turn−On Delay Time
Rise Time
t
6.0
26
16
3.0
d(ON)
t
r
V
I
= 10 V, V = 15 V,
DS
GS
ns
V
= 15 A, R = 3.0 W
D
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
J
0.82
0.69
23.4
12.1
11.3
9.7
1.1
V
GS
= 0 V,
I
S
= 30 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
NTTFS4C13N
TYPICAL CHARACTERISTICS
70
70
60
50
40
30
20
10
0
10 V
6.5 V
V
DS
= 5 V
4.5 V
60
50
40
30
20
10
0
4.2 V
4 V
3.8 V
3.6 V
3.4 V
3.2 V
T = 125°C
J
3.0 V
2.8 V
T = 25°C
J
T = −55°C
J
T = 25°C
J
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.022
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
I
D
= 30 A
T = 25°C
J
V
= 4.5 V
GS
V
= 10 V
GS
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1000
100
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
I
V
= 30 A
V
GS
= 0 V
D
= 10 V
GS
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.9
0.8
0.7
10
−50
−25
0
25
50
75
100
125
150
5
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
NTTFS4C13N
TYPICAL CHARACTERISTICS
1000
900
800
700
600
500
400
300
200
100
0
11
V
= 0 V
GS
10
9
8
7
6
5
4
3
2
1
0
Q
T
T = 25°C
J
C
iss
C
oss
Q
gd
T = 25°C
DD
J
V
Q
gs
= 15 V
C
rss
V
GS
= 10 V
I
D
= 30 A
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
16
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
10
30
25
20
15
10
5
V = 0 V
GS
V
= 15 V
= 15 A
= 10 V
DD
I
D
V
GS
T = 25°C
J
t
r
t
d(off)
T = 125°C
J
t
d(on)
t
f
1
0
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
12
10
8
I
D
= 15 A
10 ms
100 ms
1 ms
10 ms
1
6
0 V < V < 10 V
GS
Single Pulse
4
T
C
= 25°C
0.1
dc
R
Limit
DS(on)
2
Thermal Limit
Package Limit
0.01
0
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
NTTFS4C13N
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
50
45
40
35
30
25
20
15
10
5
T = 25°C
A
T = 85°C
A
10
1
1.0E−08 1.0E−07 1.0E−06
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
(A)
1.0E−05 1.0E−04 1.E−03
I
D
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
http://onsemi.com
6
NTTFS4C13N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.028
0.000
0.009
0.006
0.80
0.05
0.40
0.25
4X
q
E1
c
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
SEATING
PLANE
0.13
1.50
−−−
0.005
0.059
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X
b
0.10
0.05
C
C
A B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
PITCH
4X
L
4X
0.66
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
BOTTOM VIEW
G
2.30
0.57
0.47
0.75
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTTFS4C13N/D
相关型号：
©2020 ICPDF网 联系我们和版权申明