NTTFSS002N04HL [ONSEMI]
Power MOSFET, Single, N-Channel, 40V/2.1mΩ, WDFN9 3x3, Source Down;
| 型号： | NTTFSS002N04HL |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, Single, N-Channel, 40V/2.1mΩ, WDFN9 3x3, Source Down |
| 文件： | 总7页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, Source Down,
WDFN9
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
2.1 mW @ 10 V
3.1 mW @ 4.5 V
40 V
150 A
40 V, 2.1 mW, 150 A
NMOS
NTTFSS002N04HL
D (5, 6, 7, 8)
Features
• Advanced Source−Down Package Technology (3.3x3.3mm) with
Excellent Thermal Conduction
G (9)
• Ultra Low R
to Improve System Efficiency
• Low Q and Capacitance to Minimize Driving and Switching Losses
DS(on)
G
S (1, 2, 3, 4)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
Typical Applications
• DC−DC Switching Applications
• ORing Applications
2N04L
AWLYWW
• Power Load Switch
WDFN9
CASE 511EB
• Battery Management and Protection
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
2N04L= Specific Device Code
= Assembly Location
WL = Wafer Lot
= Year
A
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Y
WW = Work Week
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
T
T
T
= 25°C
= 85°C
= 25°C
I
150
107
84
A
C
C
C
D
Current R
(Note 1)
q
JC
Steady
State
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Power Dissipation
(Note 1)
P
W
A
D
R
q
JC
Continuous Drain
Current R
T = 25°C
A
I
D
23
16
2
q
JA
T = 85°C
A
Steady
State
(Notes 1, 2)
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
96
A
A
p
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 49 A, L = 0.1 mH)
L(pk)
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
°C
J
stg
+150
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 1 in pad size, 1 oz Cu pad.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
September, 2021 − Rev. 0
NTTFSS002N04HL/D
NTTFSS002N04HL
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
1.48
60
Unit
Junction−to−Case − Steady State (Note 1)
R
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 1, 2)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
R
q
JA
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
8
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
mA
DSS
GS
DS
J
V
= 32 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 120 mA
1.2
2.0
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 120 mA, ref to 25°C
D
−5.6
1.77
2.52
0.85
mV/°C
mW
GS(TH)
J
R
V
GS
GS
= 10 V
= 4.5 V
I
= 23 A
= 18 A
2.10
3.10
DS(on)
D
D
V
I
Gate Resistance
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
2760
655
43
pF
ISS
Output Capacitance
Reverse Capacitance
Total Gate Charge
C
V
= 0 V, V = 20 V, f = 1 MHz
DS
OSS
RSS
GS
C
Q
20.3
2.5
8.4
6.0
43
nC
G(TOT)
Threshold Gate Charge
Gate−to−Drain Charge
Gate−to−Source Charge
Total Gate Charge
Q
G(TH)
V
GS
= 4.5 V, V = 20 V; I = 18 A
DS D
Q
GD
GS
Q
Q
V
= 10 V, V = 20 V; I = 18 A
G(TOT)
GS DS D
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
12.6
10
ns
d(ON)
t
r
V
= 10 V, V = 20 V,
DD
GS
D
I
= 23 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
36.6
6.8
d(OFF)
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.78
0.63
35.8
26.6
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 23 A
T = 125°C
J
Reverse Recovery Time
t
ns
RR
V
GS
= 0 V, dI/dt = 100 A/ms,
I
S
= 23 A
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTTFSS002N04HL
TYPICAL CHARACTERISTICS
160
140
120
100
80
200
3.4 V
V
GS
= 10 V to 3.6 V
3.2 V
180
160
140
120
100
80
V
= 10 V
DS
3.0 V
T = 25°C
J
60
2.8 V
2.6 V
60
40
40
20
20
0
T = 125°C
J
T = −55°C
J
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
T = 25°C
D
T = 25°C
J
J
I
= 23 A
V
= 4.5 V
= 10 V
GS
V
GS
2.0
1.5
1.0
1.5
1.0
3
4
5
6
7
8
9
10
20
40
60
80
100
120
140
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.8
1.6
1.4
1.2
1.0
100K
10K
1K
T = 150°C
V
I
= 10 V
= 23 A
J
GS
D
T = 125°C
J
T = 85°C
J
100
10
1
0.8
0.6
T = 25°C
J
−50 −25
0
25
50
75
100
125
150
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTTFSS002N04HL
TYPICAL CHARACTERISTICS
10K
1K
10
9
C
ISS
8
7
6
5
4
3
C
OSS
RSS
Q
Q
GD
GS
100
10
C
T = 25°C
J
2
1
0
V
= 0 V
GS
I
D
= 23 A
T = 25°C
J
V
DS
= 20 V
f = 1 MHz
0
5
10
15
20
25
30
35
40 45
0
5
10
15
20
25
30
35
40
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
1000
100
10
V
V
I
= 10 V
= 20 V
= 23 A
GS
V
GS
= 0 V
DS
t
d(off)
D
t
f
t
r
t
d(on)
10
1
1
T = 125°C
J
T = 25°C
T = −55°C
J
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
10 ms
J(initial)
100 ms
10
T
= 100°C
J(initial)
T
= 25°C
C
1 ms
Single Pulse
≤ 10 V
V
GS
1
10 ms
100 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1E−6 1E−5
1E−4
t , TIME IN AVALANCHE (s)
AV
1E−3
1E−2
1E−1 1E+0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTTFSS002N04HL
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTTFSS002N04HL
2N04L
WDFN9
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTTFSS002N04HL
PACKAGE DIMENSIONS
WDFN9 3.3x3.3, 0.65P
CASE 511EB
ISSUE B
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6
NTTFSS002N04HL
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