NTZD5110NT5G [ONSEMI]
双 N 沟道,小信号 MOSFET,带 ESD 保护,60V,310mA,1.6Ω;型号: | NTZD5110NT5G |
厂家: | ONSEMI |
描述: | 双 N 沟道,小信号 MOSFET,带 ESD 保护,60V,310mA,1.6Ω 小信号场效应晶体管 |
文件: | 总5页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTZD5110N
Small Signal MOSFET
60 V, 310 mA, Dual N−Channel
with ESD Protection, SOT−563
Features
• Low R
• Low Threshold Voltage
• ESD Protected Gate
Improving System Efficiency
DS(on)
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• Small Footprint 1.6 x 1.6 mm
• These are Pb−Free Devices
V
R
MAX
I Max
D
(BR)DSS
DS(on)
1.6 W @ 10 V
2.5 W @ 4.5 V
60
310 mA
Applications
• Load/Power Switches
• Driver Circuits: Relays, Lamps, Displays, Memories, etc.
• Battery Management/Battery Operated Systems
• Cell Phones, Digital Cameras, PDAs, Pagers, etc.
D1
D2
G1
G2
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Parameter
Drain−to−Source Voltage
Symbol Value Unit
V
60
V
V
DSS
N−Channel
MOSFET
S1
S2
Gate−to−Source Voltage
V
±20
294
212
250
GS
Continuous Drain
Current (Note 1)
T = 25°C
I
mA
A
D
Steady
State
MARKING
DIAGRAM
T = 85°C
A
Power Dissipation
(Note 1)
P
mW
mA
D
D
6
Steady State
1
S7 D
Continuous Drain
Current (Note 1)
T = 25°C
A
I
310
225
280
D
SOT−563−6
CASE 463A
tv5 s
T = 85°C
A
Power Dissipation
(Note 1)
P
mW
t v 5 s
t = 10 ms
S7 = Specific Device Code
= Date Code
D
Pulsed Drain Current
I
590
mA
p
DM
Operating Junction and Storage Temperature
T ,
STG
−55 to
150
°C
J
PINOUT: SOT−563
T
Source Current (Body Diode)
I
350
260
mA
S
S
G
D
1
6
5
D
1
1
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
Gate−Source ESD Rating (HBM, Method 3015)
ESD
900
V
G
2
3
2
1
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
500
447
Unit
4
S
2
2
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t v 5 s (Note 1)
°C/W
R
q
JA
Top View
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
©
Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
April, 2007 − Rev. 3
NTZD5110N/D
NTZD5110N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
60
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
−
71
mV/°C
(BR)DSS
J
−
Zero Gate Voltage Drain Current
I
V
DS
= 0 V
T = 25°C
−
−
−
−
−
−
1.0
500
100
mA
DSS
GSS
GS
J
V
= 60 V
T = 125°C
J
V
= 0 V
= 50 V
T = 25°C
J
nA
GS
DS
V
Gate−to−Source Leakage Current
I
V
= 0 V, V = "20 V
−
−
−
−
−
−
"10
450
150
mA
nA
nA
DS
DS
DS
GS
V
= 0 V, V = "10 V
GS
V
= 0 V, V = "5.0 V
GS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
V
= V , I = 250 mA
1.0
−
−
2.5
−
V
mV/°C
W
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−
4.0
GS(TH)
J
V
GS
V
GS
V
DS
= 10 V, I = 500 mA
−
1.19
1.33
80
1.6
2.5
−
D
R
DS(on)
= 4.5 V, I = 200 mA
−
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
= 5.0 V, I = 200 mA
−
S
D
C
ISS
−
−
−
−
−
−
−
24.5
4.2
2.2
0.7
0.1
0.3
0.1
−
−
−
−
−
−
−
pF
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
C
C
OSS
RSS
V
= 20 V
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
nC
ns
V
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Q
G(TH)
V
= 4.5 V, V = 10 V;
DS
GS
I
= 200 mA
D
Q
GS
GD
Q
t
−
−
−
−
12
−
−
−
−
d(ON)
Rise Time
t
7.3
r
V
D
= 10 V, V = 30 V,
DD
GS
I
= 200 mA, R = 10 W
G
Turn−Off Delay Time
t
63.7
30.6
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
T = 25°C
J
−
−
0.8
0.7
1.2
V
S
= 0 V,
GS
= 200 mA
V
SD
I
T = 85°C
J
−
2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTZD5110N
TYPICAL CHARACTERISTICS
1.6
1.2
0.8
1.2
5.0 V
4.5 V
V
= 10 V
GS
9.0 V
4.0 V
8.0 V
7.0 V
6.0 V
0.8
3.5 V
T = 25°C
J
3.0 V
2.5 V
0.4
0
0.4
0
T = 125°C
T = −55°C
J
J
0
2
4
6
0
2
4
6
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.2
2.8
2.4
2.0
1.6
1.2
0.8
3.2
2.8
2.4
2.0
1.6
1.2
0.8
V
= 4.5 V
V
= 10 V
GS
GS
T = 125°C
J
T = 125°C
J
T = 85°C
J
T = 85°C
J
T = 25°C
J
T = 25°C
J
T = −55°C
J
T = −55°C
J
0.4
0
0.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
I , DRAIN CURRENT (A)
D
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Drain Current and
Figure 4. On−Resistance vs. Drain Current and
Temperature
Temperature
2.4
2.0
1.6
1.2
2.2
1.8
1.4
I
= 0.2 A
D
I
= 500 mA
D
V
= 4.5 V
GS
V
= 10 V
GS
I
= 200 mA
D
1.0
0.6
0.8
0.4
2
4
6
8
10
−50 −25
0
25
50
75
100
125 150
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance vs. Gate−to−Source
Figure 6. On−Resistance Variation with
Voltage
Temperature
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3
NTZD5110N
TYPICAL CHARACTERISTICS
30
5
C
iss
T = 25°C
J
I
= 0.2 A
D
4
3
2
20
10
0
T = 25°C
J
V
= 0 V
GS
C
oss
1
0
C
rss
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
V
= 0 V
GS
1
T = 85°C
J
T = 25°C
J
0.1
0.01
0.4
0.6
0.8
1.0
1.2
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
Figure 9. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
Package
Shipping
NTZD5110NT1
SOT−563
3000 / Tape & Reel
3000 / Tape & Reel
NTZD5110NT1G
SOT−563
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
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4
NTZD5110N
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
A
−X−
C
K
6
5
2
4
3
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
B
−Y−
S
J
A
B
C
D
G
J
1.50
1.10
0.50
0.17
1.70 0.059 0.067
1.30 0.043 0.051
0.60 0.020 0.024
0.27 0.007 0.011
0.020 BSC
0.18 0.003 0.007
0.30 0.004 0.012
1.70 0.059 0.067
1
0.50 BSC
D 56 PL
0.08
0.10
1.50
G
M
0.08 (0.003)
X
Y
K
S
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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For additional information, please contact your local
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NTZD5110N/D
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