NVB6413ANT4G [ONSEMI]
Power MOSFET 100V 42A 28 mohm Single N-Channel D2PAK;
| 型号： | NVB6413ANT4G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 100V 42A 28 mohm Single N-Channel D2PAK 晶体管 功率场效应晶体管 |
| 文件： | 总7页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTB6413AN, NTP6413AN
N-Channel Power MOSFET
100 V, 42 A, 28 mW
Features
• Low R
DS(on)
• High Current Capability
• 100% Avalanche Tested
• These are Pb−Free Devices
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I
D
MAX
V
R
MAX
DS(ON)
(Note 1)
(BR)DSS
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)
J
100 V
28 mW @ 10 V
42 A
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Symbol
Value
100
$20
42
Unit
V
V
DSS
N−Channel
V
GS
V
D
Continuous Drain
Current R
Steady
State
T
= 25°C
= 100°C
= 25°C
I
D
A
C
q
JC
T
C
28
Power Dissipation
R
Steady
State
T
C
P
D
136
W
q
JC
G
Pulsed Drain Current
t = 10 ms
p
I
178
A
DM
S
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
4
Source Current (Body Diode)
I
S
42
A
4
Single Pulse Drain−to−Source Avalanche
E
AS
200
mJ
Energy (V = 50 Vdc, V = 10 Vdc,
DD
GS
1
2
I
= 36.5 A, L = 0.3 mH, R = 25 W)
L(pk)
G
3
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260
°C
2
TO−220AB
D PAK
CASE 221A
STYLE 5
CASE 418B
STYLE 2
THERMAL RESISTANCE RATINGS
Parameter
1
2
3
Symbol
Max
1.1
35
Unit
Junction−to−Case (Drain) Steady State
Junction−to−Ambient (Note 1)
R
°C/W
q
JC
MARKING DIAGRAM
& PIN ASSIGNMENT
R
q
JA
4
4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
Drain
Drain
NTB
6413ANG
AYWW
(Cu Area 1.127 sq in [2 oz] including traces).
NTP
6413ANG
AYWW
2
1
Gate
3
1
Gate
3
Drain
Source
Source
2
6413AN = Specific Device Code
Drain
G
A
Y
= Pb−Free Device
= Assembly Location
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
November, 2009 − Rev. 1
NTB6413AN/D
NTB6413AN, NTP6413AN
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified)
J
Characteristics
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
V
/T
J
115
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
1.0
100
mA
DSS
GS
J
V
= 100 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V = $20 V
$100
nA
GSS
DS
GS
V
GS(th)
V
= V , I = 250 mA
2.0
4.0
28
V
mV/°C
mW
S
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On−Resistance
Forward Transconductance
V
/T
8.1
GS(th)
J
R
V
= 10 V, I = 42 A
25.6
17.9
DS(on)
GS
D
g
V
= 5 V, I = 20 A
GS D
FS
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
1800
280
100
51
pF
nC
iss
V
DS
= 25 V, V = 0 V,
GS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oss
f = 1 MHz
C
rss
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
2.0
10
G(TH)
V
GS
= 10 V, V = 80 V,
DS
Q
GS
GD
GP
I
= 42 A
D
Q
V
26
5.8
2.4
V
Gate Resistance
R
W
G
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
13
84
52
71
ns
d(on)
t
r
V
= 10 V, V = 80 V,
DD
GS
D
I
= 42 A, R = 6.2 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.92
0.83
73
1.3
V
SD
J
I
S
= 42 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
rr
t
56
a
V
GS
= 0 V, I = 42 A,
S
dI /dt = 100 A/ms
SD
Discharge Time
t
17
b
Reverse Recovery Charge
Q
230
nC
RR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTB6413AN, NTP6413AN
TYPICAL CHARACTERISTICS
100
80
60
40
20
0
100
V
DS
w 10 V
10 V
T = 25°C
J
7.5 V
80
60
40
20
0
6.5 V
6.0 V
T = 25°C
J
T = 125°C
J
5.5 V
5.0 V
T = −55°C
J
0
1
2
3
4
5
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
0.08
0.06
0.04
I
= 42 A
V
GS
= 10 V
D
T = 175°C
T = 25°C
J
J
T = 125°C
J
T = 25°C
J
0.02
0.00
T = −55°C
J
5
6
7
8
9
10
10
20
30
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Region versus Gate Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
3
2.5
2
10000
1000
100
V
= 0 V
I
= 42 A
= 10 V
GS
D
V
GS
T = 150°C
J
1.5
1
T = 125°C
J
0.5
−50 −25
0
25
50
75
100 125 150 175
10
20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
versus Voltage
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3
NTB6413AN, NTP6413AN
TYPICAL CHARACTERISTICS
10
4000
3000
2000
1000
0
100
80
60
40
20
0
Q
T = 25°C
T
J
V
GS
= 0 V
8
6
4
2
0
V
V
DS
GS
Q
Q
gd
gs
C
iss
I
D
= 42 A
C
oss
T = 25°C
J
C
rss
0
10 20 30 40 50 60 70 80 90 100
, DRAIN−TO−SOURCE VOLTAGE (V)
0
10
20
30
40
50
V
DS
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
100
10
V
I
= 80 V
= 42 A
= 10 V
DS
T = 25°C
J
40
30
20
10
0
D
V
GS
= 0 V
V
GS
t
t
r
f
t
d(off)
t
d(on)
1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
1000
100
10
200
150
100
50
I
D
= 56 A
10 ms
100 ms
1 ms
V
= 10 V
GS
10 ms
dc
SINGLE PULSE
= 25°C
T
C
1
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0
25
0.1
1
10
100
1000
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTB6413AN, NTP6413AN
TYPICAL CHARACTERISTICS
10
1
D = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
0.001
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Device
†
Package
Shipping
2
NTB6413ANG
D PAK
50 Units / Rail
(Pb−Free)
2
NTB6413ANT4G
NTP6413ANG
D PAK
800 / Tape & Reel
50 Units / Rail
(Pb−Free)
TO−220
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTB6413AN, NTP6413AN
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−T−
SEATING
PLANE
K
W
K
L
J
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
M
N
P
R
S
V
H
D 3 PL
M
M
0.13 (0.005)
T B
VARIABLE
STYLE 2:
PIN 1. GATE
2. DRAIN
CONFIGURATION
ZONE
N
P
R
3. SOURCE
4. DRAIN
U
L
L
L
M
M
M
F
F
F
VIEW W−W
VIEW W−W
VIEW W−W
1
2
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.25X04
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTB6413AN, NTP6413AN
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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NTB6413AN/D
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