NVBG060N090SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mΩ, 900 V, M2, D2PAK−7L;
| 型号： | NVBG060N090SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mΩ, 900 V, M2, D2PAK−7L |
| 文件： | 总8页 (文件大小：790K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 60 mohm, 900ꢀV,
M2, D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
900 V
84 mW @ 15 V
44 A
Drain
(TAB)
NVBG060N090SC1
Features
• Typ. R
• Typ. R
= 60 mW @ V = 15 V
DS(on)
DS(on)
GS
Gate
(Pin 1)
= 43 mW @ V = 18 V
GS
• Ultra Low Gate Charge (Q
= 88 nC)
G(tot)
Driver
Source
(Pin 2)
• High Speed Switching with Low Capacitance (C = 115 pF)
oss
Power Source
(Pin 3, 4, 5, 6, 7)
• 100% Avalanche Tested
N−CHANNEL MOSFET
• T = 175°C
J
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC-DC converter for EV/HEV
D2PAK−7L
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
CASE 418BJ
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
MARKING DIAGRAM
V
DSS
900
V
V
V
Gate−to−Source Voltage
V
GS
+22/−8
+15/−5
AYWWZZ
NVBG
060090SC1
Recommended Operation
Values of Gate−to−Source
T
< 175°C
= 25°C
V
GSop
C
Continuous Drain
Current (Note 2)
Steady
State
T
I
D
44
211
5.8
3.6
176
320
A
W
A
C
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Lot Traceability
Power Dissipation
(Note 2)
P
D
Continuous Drain
Current (Notes 1, 2)
Steady
State
T = 25°C
I
D
A
NVBG060N090SC1 = Specific Device Code
Power Dissipation
(Notes 1, 2)
Pulsed Drain Current
(Note 3)
P
D
W
A
T = 25°C
I
DM
A
ORDERING INFORMATION
†
Single Pulse Surge
Drain Current
Capability (Note 4)
T = 25°C, t = 10 ms,
A
I
A
Device
NVBG060N090SC1
Package
Shipping
p
DSC
R
= 4.7 W
G
D2PAK−7L
800 /
Tape & Reel
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Source Current (Body Diode)
I
S
21
A
Single Pulse Drain−to−Source Avalanche
E
AS
162
mJ
Energy (I
= 18 A, L = 1 mH) (Note 5)
L(pk)
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
T
L
245
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface mounted on a FR−4 board using1 in pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive rating, limited by max junction temperature.
4. Peak current might be limited by transconductance.
5. EAS of 162 mJ is based on starting T = 25°C; L = 1 mH, I = 18 A,
J
AS
V
DD
= 100 V, V = 15 V.
GS
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2022 − Rev. 4
NVBG060N090SC1/D
NVBG060N090SC1
Table 1. THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Notes 1, 2)
Symbol
Max
0.70
41
Unit
°C/W
R
q
JC
R
q
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
900
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 1 mA, referenced to 25°C
D
502
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
100
250
1
mA
mA
mA
DSS
J
V
V
= 0 V,
GS
DS
= 900 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
GS
= +22/−8 V, V = 0 V
DS
GSS
V
R
V
GS
= V , I = 5 mA
1.8
2.7
4.3
+15
84
V
V
GS(TH)
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
−5
GOP
V
GS
V
GS
V
GS
V
DS
= 15 V, I = 20 A, T = 25°C
60
43
76
16
mW
DS(on)
D
J
= 18 V, I = 20 A, T = 25°C
D
J
= 15 V, I = 20 A, T = 175°C
135
D
J
Forward Transconductance
g
FS
= 20 V, I = 20 A
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 450 V
1800
115
12
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
D
= −5/15 V, V = 720 V,
88
nC
G(TOT)
GS
DS
I
= 10 A
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
16
G(TH)
Q
27
GS
Q
28
GD
R
f = 1 MHz
3.0
W
G
SWITCHING CHARACTERISTICS, VGS = 10 V
Turn−On Delay Time
t
V
D
= −5/15 V, V = 720 V,
24
23
40
66
74
20
ns
d(ON)
GS
DS
I
= 20 A, R = 2.5 W
G
Rise Time
t
r
Inductive load
Turn−Off Delay Time
t
35
d(OFF)
Fall Time
t
f
11
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
410
19
mJ
ON
E
OFF
E
429
tot
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
V
= −5 V, T = 25°C
21
A
V
SD
GS
J
Current
Pulsed Drain−Source Diode Forward
Current (Note 3)
I
176
SDM
Forward Diode Voltage
V
= −5 V, I = 10 A, T = 25°C
3.9
SD
GS
SD
J
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2
NVBG060N090SC1
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS (continued)
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
t
V
= −5/15 V, I = 30 A,
18
80
ns
nC
mJ
A
RR
GS
S
SD
dI /dt = 1000 A/ms, V = 720 V
DS
Q
RR
E
REC
RRM
1.0
9.0
10
I
t
t
ns
ns
a
Discharge Time
8.0
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVBG060N090SC1
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NVBG060N090SC1
TYPICAL CHARACTERISTICS (continued)
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NVBG060N090SC1
TYPICAL CHARACTERISTICS (continued)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D2PAK7 (TO−263−7L HV)
PAGE 1 OF 1
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