NVBG022N120M3S [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L;
| 型号： | NVBG022N120M3S |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L |
| 文件： | 总8页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
22ꢀmohm, 1200ꢀV, M3S,
D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
30 mꢀ @ 18 V
72 A
Drain (TAB)
NVBG022N120M3S
Features
Gate (Pin 1)
• Typ. R
= 22 mꢀ @ V = 18 V
GS
DS(on)
• Ultra Low Gate Charge (Q
= 142 nC)
G(tot)
Driver Source (Pin 2)
Power Source (Pins 3, 4, 5, 6, 7)
• High Speed Switching with Low Capacitance (C = 146 pF)
oss
• 100% Avalanche Tested
N−CHANNEL MOSFET
• AEC−Q101 Qualified and PPAP Capable
• These Devices are RoHS Compliant
Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
1200
Unit
V
2
D PAK−7L
V
DSS
CASE 418BJ
Gate−to−Source Voltage
V
−10/+22
−3/+18
V
GS
MARKING DIAGRAM
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
V
C
Continuous Drain
Current (Notes 2, 3)
Steady
State
T
I
72
234
51
A
W
A
C
D
BG022N
120M3S
AYWWZZ
Power Dissipation
(Note 2)
P
D
Continuous Drain
Current (Notes 2, 3)
Steady
State
T
C
= 100°C
I
D
BG022N120M3S = Specific Device Code
A
Y
= Assembly Location
= Year
Power Dissipation
(Note 2)
P
117
171
W
A
D
WW = Work Week
ZZ
= Lot Traceability
Pulsed Drain Current
(Note 4)
T
C
= 25°C
I
DM
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
A
J
stg
ORDERING INFORMATION
+175
Device
Package
Shipping
Source Current (Body Diode)
I
S
53
T
C
= 25°C, V = −3 V (Note 2)
2
GS
NVBG022N120M3S
D PAK−7L
800 / Tape
& Reel
Single Pulse Drain−to−Source Avalanche
Energy (I = 23.1 A, L = 1 mH) (Note 5)
E
AS
267
270
mJ
°C
L(pk)
Maximum Temperature for Soldering (10 s)
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface mounted on a FR−4 board using1 in pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. The maximium current rating is based on typical R
performance.
DS(on)
4. Repetitive rating, limited by max junction temperature.
5. E of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23.1 A,
AS
DD
J
AS
V
= 100 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
June, 2023 − Rev. 2
NVBG022N120M3S/D
NVBG022N120M3S
THERMAL CHARACTERISTICS
Parameter
Symbol
Typ
0.64
−
Max
−
Unit
Junction−to−Case − Steady State (Note 2)
R
°C/W
ꢁ
JC
Junction−to−Ambient − Steady State (Notes 1, 2)
R
40
ꢁ
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF−STATE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I
D
= 1 mA, referenced to 25°C
−
0.3
V/°C
(BR)DSS
J
(Note 7)
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON−STATE CHARACTERISTICS
Gate Threshold Voltage
I
V
= 0 V, V = 1200 V
−
−
−
−
100
1
ꢂ A
ꢂ A
DSS
GS
DS
I
V
= +22/−10 V, V = 0 V
GSS
GS DS
V
R
V
= V , I = 20 mA
2.04
−3
−
2.72
−
4.4
+18
30
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
= 18 V, I = 40 A, T = 25°C
22
44
mꢀ
DS(on)
GS
D
J
V
= 18 V, I = 40 A, T = 175°C
−
−
GS
D
J
(Note 7)
Forward Transconductance
g
FS
V
DS
= 10 V, I = 40 A (Note 7)
−
34
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
−
−
−
−
−
−
−
−
3175
146
14
−
−
−
−
−
−
−
−
pF
nC
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 800 V
DS
GS
Reverse Transfer Capacitance
Total Gate Charge
Q
142
11
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
G(TH)
V
= −3/18 V, V = 800 V,
DS
GS
I
= 40 A
D
Q
16
GS
GD
Q
38
R
f = 1 MHz
1.5
ꢀ
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
−
−
−
−
−
−
−
18
24
−
−
−
−
−
−
−
ns
d(ON)
Rise Time
t
r
V
= −3/18 V,
GS
Turn−Off Delay Time
t
47
d(OFF)
V
= 800 V,
= 40 A,
= 4.5 ꢀ
DS
Fall Time
t
f
14
I
D
R
G
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
485
220
705
ꢂ
J
inductive load (Notes 6, 7)
E
OFF
E
tot
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
−
−
−
−
−
53
171
−
A
V
SD
Current (Note 2)
V
= −3 V, T = 25°C
GS
C
(Note 7)
Pulsed Source−Drain Diode Forward
Current (Note 4)
I
SDM
Forward Diode Voltage
V
V
GS
= −3 V, I = 40 A, T = 25°C
4.5
SD
SD
J
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2
NVBG022N120M3S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge time
Symbol
Test Condition
Min
Typ
Max
Unit
t
−
−
−
−
−
−
23
146
5
−
−
−
−
−
−
ns
nC
ꢂ J
A
RR
Q
RR
V
S
= −3/18 V, I = 40 A,
E
REC
GS
SD
dI /dt = 1000 A/ꢂ s, V = 800 V
DS
I
13
13
10
(Note 7)
RRM
t
A
t
B
ns
ns
Discharge time
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. E /E
result is with body diode
ON OFF
7. Defined by design, not subject to production test.
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3
NVBG022N120M3S
TYPICAL CHARACTERISTICS
2.0
200
150
100
50
12 V
V
GS
= 20 V to 15 V
1.5
12 V
1.0
0.5
V
GS
= 20 V to 15 V
T
C
= 25°C
T
C
= 25°C
0
0
0
1
2
3
4
5
6
7
8
9
10
0
40
80
I , DRAIN CURRENT (A)
120
160
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
250
200
2.5
I
V
= 40 A
D
I
D
= 40 A
= 18 V
GS
2.0
150
100
50
1.5
1.0
0.5
0
T = 150°C
J
T = 25°C
J
0
−55 −30 −5
20
45
70
95 120 145 170
5
10
15
20
T , JUNCTION TEMPERATURE (°C)
J
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
500
400
300
200
100
80
E
tot
E
on
V
DS
= 10 V
60
E
off
40
T = 25°C
J
T = 175°C
J
R
= 4.5 ꢀ
= 800 V
= 18/−3 V
G
100
0
20
0
V
DD
V
GS
T = −55°C
J
5
10
15
20
25
30
35
40
45
3
6
9
12
15
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 5. Transfer Characteristics
Figure 6. Switching Loss vs. Drain Current
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4
NVBG022N120M3S
TYPICAL CHARACTERISTICS
900
800
700
600
500
400
300
200
700
E
tot
I
V
V
= 20 A
R
= 4.5 ꢀ
= 40 A
= 18/−3 V
D
G
E
tot
= 800 V
600
500
400
300
200
I
D
DD
GS
= 18/−3 V
V
GS
E
on
E
on
E
off
E
off
100
0
100
0
500
600
700
800
900
1000
0
2
4
6
8
10
V
DD
(V)
R , GATE RESISTANCE (ꢀ)
G
Figure 7. Switching Loss vs. Drain Voltage
Figure 8. Switching Loss vs. Gate Resistance
300
100
18
15
12
9
V
GS
= −3 V
I
D
= 40 A
V
= 800 V
V
DD
= 400 V
DD
T = 25°C
J
V
DD
= 600 V
T = 175°C
J
6
10
1
T = −55°C
J
3
0
−3
0
30
60
90
120
150
1
3
5
7
9
Q , GATE CHARGE (nC)
g
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 10. Gate−to−Source Voltage vs. Total
Figure 9. Diode Forward Voltage vs. Current
Charge
10000
1000
100
C
iss
100
T = 25°C
J
C
oss
T = 150°C
J
10
1
C
rss
10
1
f = 1 MHz
= 0 V
V
GS
0.1
1
10
100
800
0.001
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (ms)
AV
Figure 11. Capacitance vs. Drain−to−Source
Figure 12. Unclamped Inductive Switching
Capability
Voltage
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5
NVBG022N120M3S
TYPICAL CHARACTERISTICS
80
60
40
1000
100
10
V
GS
= 18 V
10 ꢂ s
100 ꢂ s
Single Pulse
T = Max Rated
1 ms
1
20
0
10 ms
J
R
= 0.64°C/W
ꢁ
JC
R
= 0.64°C/W
ꢁ
JC
100 ms/DC
100 10002000
, DRAIN−TO−SOURCE VOLTAGE (V)
T
C
= 25°C
0.1
0.1
1
10
25
50
75
100
125
150
175
V
DS
T , CASE TEMPERATURE (°C)
C
Figure 14. Safe Operating Area
Figure 13. Maximum Continuous Drain
Current vs. Case Temperature
10000
Single Pulse
R
= 0.64°C/W
ꢁ
JC
T
C
= 25°C
1000
100
0.00001 0.0001
0.001
0.01
0.1
1
t, PULSE WIDTH (sec)
Figure 15. Single Pulse Maximum Power
Dissipation
1
0.5 Duty Cycle
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
Notes:
P
DM
0.01
Z
ꢁ
(t) = r(t) x R
ꢁ
JC
JC
R
= 0.64°C/W
ꢁ
JC
t
Peak T = P
x Z (t) + T
ꢁ
JC C
1
J
DM
t
Duty Cycle, D = t /t
2
1
2
0.001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
Figure 16. Junction−to−Case Transient Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D2PAK7 (TO−263−7L HV)
PAGE 1 OF 1
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