NVBLS4D0N15MC [ONSEMI]
Single N-Channel, 150 V, 4.4 mΩ, 187 A;
| 型号： | NVBLS4D0N15MC |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel, 150 V, 4.4 mΩ, 187 A |
| 文件： | 总7页 (文件大小：425K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Single N-Channel
150 V, 4.4 mW, 187 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
150 V
4.4 mW @ 10 V
187 A
NVBLS4D0N15MC
Features
D
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
• Lowers Switching Noise/EMI
G
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
S
Compliant
Typical Applications
N−CHANNEL MOSFET
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Drain−to−Source Voltage
Value
150
20
Unit
V
V
DSS
Top
Bottom
H−PSOF8L 11.68x9.80
V
GS
Gate−to−Source Voltage
V
I
Continuous Drain
Steady
State
T
= 25°C
= 100°C
= 25°C
187
132
316
158
22
A
MO−299A
CASE 100CU
D
C
Current R
(Note 2)
q
JC
T
C
P
Power Dissipation
(Note 2)
Steady
State
T
C
W
A
D
R
q
JC
T
C
= 100°C
MARKING DIAGRAM
I
D
Continuous Drain
Current R
Steady
State
T = 25°C
A
q
JA
T = 100°C
A
15
(Notes 1, 2)
&Z&3&K
4D0N
15MC
P
Power Dissipation
Steady
State
T = 25°C
A
4
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
2
I
Pulsed Drain Current
T = 25°C, t = 10 ms
900
A
DM
A
p
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
T , T
Operating Junction and Storage Temperature
Range
−55 to
°C
J
stg
+175
I
S
Source Current (Body Diode)
263
A
4D0N15MC
= Specific Device Code
E
AS
Single Pulse Drain−to−Source Avalanche
2300
mJ
Energy (I
= 15.9 A)
LPEAK
ORDERING INFORMATION
T
Lead Temperature Soldering Reflow for
260
°C
L
Soldering Purposes (1/8″ from case for 10 s)
†
Device
NVBLS4D0N15MC
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in pad size, 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
MO−299A
(Pb−Free)
2000 / Tape
& Reel
2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
THERMAL RESISTANCE RATINGS
Symbol
Parameter
Max
0.5
Unit
Junction−to−Case – Steady State (Note 2)
Junction−to−Ambient – Steady State (Note 2)
°C/W
R
q
JC
R
35.8
q
JA
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2022 − Rev. 4
NVBLS4D0N15MC/D
NVBLS4D0N15MC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
Drain−to−Source Breakdown Voltage
V
= 0 V, I = 250 mA
150
−
−
−
V
(BR)DSS
GS
D
V
/ T
Drain−to−Source Breakdown Voltage
Temperature Coefficient
I = 250 mA, ref to 25°C
D
−
30.23
mV/°C
(BR)DSS
J
I
Zero Gate Voltage Drain Current
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
1
mA
mA
nA
DSS
GS
DS
J
= 120 V
T = 125°C
J
10
100
I
Gate−to−Source Leakage Current
V
= 0 V, V =
GS
20 V
GSS
DS
GS
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
= V , I = 584 mA
2.5
3.7
4.5
V
GS(TH)
DS
D
V
/ T
Negative Threshold Temperature Coefficient
I = 250 mA, ref to 25°C
D
−
−
−10.12
−
mV/°C
mW
GS(TH)
J
R
Drain−to−Source On Resistance
3.1
4.4
V
V
= 10 V, I = 80 A
DS(on)
GS
D
g
FS
Forward Transconductance
= 5 V, I = 80 A
−
−
174
1.3
−
−
S
DS
D
R
Gate−Resistance
T = 25°C
A
W
G
CHARGES & CAPACITANCES
C
Input Capacitance
V
V
= 0 V, f = 1 MHz,
= 75 V
−
−
−
−
−
−
−
−
7490
2055
27.2
90.4
24.7
40.2
12.6
5.7
−
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
C
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
OSS
RSS
C
Q
V
= 10 V, V = 75 V,
= 80 A
G(TOT)
GS DS
I
D
Q
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
G(TH)
Q
GS
GD
GP
Q
V
V
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
t
Turn−On Delay Time
Rise Time
V
D
= 10 V, V =75 V,
−
−
−
−
47
115
58
−
−
−
−
ns
d(ON)
GS
DS
I
= 80 A, R = 6 W
G
t
r
t
Turn−Off Delay Time
Fall Time
d(OFF)
t
f
11
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Forward Diode Voltage
V
S
= 0 V,
T = 25°C
−
−
−
−
−
−
0.86
0.75
84
1.2
−
V
SD
GS
J
I
= 80 A
T = 125°C
J
t
Reverse Recovery Time
Charge Time
V
S
= 0 V, dI /dt = 100 A/ms,
= 80 A
−
ns
RR
GS
S
I
t
t
55
−
a
Discharge Time
29
−
b
Q
Reverse Recovery Charge
180
nC
RR
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
www.onsemi.com
2
NVBLS4D0N15MC
TYPICAL CHARACTERISTICS
180
165
150
135
120
105
90
180
10 V to 6.5 V
V
DS
= 5 V
165
150
135
120
105
90
V
GS
= 6.0 V
75
75
T = 25°C
J
60
60
5.5 V
5.0 V
45
30
15
0
45
30
15
0
T = 125°C
J
T = −55°C
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.5 6.0
, DRAIN−TO−SOURCE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
10
V
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
20
4.5
4.0
T = 25°C
D
T = 25°C
J
J
18
16
14
12
10
8
I
= 80 A
3.5
3.0
V
GS
= 10 V
6
2.5
2.0
4
2
0
5.5 6.0 6.5 7.0
7.5 8.0 8.5 9.0
9.5 10
0
31
62
93
124
155
186
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
2.0
1M
V
= 10 V
= 80 A
GS
I
D
100K
10K
T = 175°C
J
T = 150°C
J
1.5
1.0
0.5
T = 125°C
J
1K
V
GS
= 0 V
100
−50 −25
0
25
50
75 100 125 150 175
0
30
60
90
120
150
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
3
NVBLS4D0N15MC
TYPICAL CHARACTERISTICS
10
10K
1K
Q
T
C
iss
9
8
7
6
5
4
3
2
1
0
C
oss
Q
Q
GD
GS
100
C
rss
10
1
V = 75 V
DS
V
= 0 V
GS
I
D
= 80 A
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
1000
100
10
1000
100
V
V
= 10 V
= 75 V
= 80 A
V
GS
= 0 V
GS
DS
I
D
t
r
t
d(off)
t
d(on)
10
1
t
f
1
T = 175°C
J
T = 150°C
T = 25°C T = −55°C
J J
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.2 0.3
0.4
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.5
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
1000
100
T
= 25°C
J(initial)
10 ms
Single Pulse
= 25°C
0.5 ms
1 ms
T
C
10
1
V
GS
≤ 10 V
1
T
= 100°C
J(initial)
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
0.1
0.1
1
10
100
1000
0.0001
0.001
TIME IN AVALANCHE (s)
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
www.onsemi.com
4
NVBLS4D0N15MC
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (s)
Figure 13. Thermal Characteristics (Junction−to−Ambient)
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE C
DATE 22 MAY 2023
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
= Assembly Location
= Year
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
XXXX = Specific Device Code
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13813G
H−PSOF8L 11.68x9.80
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
NVC040N120SC1
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, Bare Die
ONSEMI
©2020 ICPDF网 联系我们和版权申明