NVCR4LS2D5N10MCA [ONSEMI]
Power MOSFET, N-Channel, 100 V, 2.5 mΩ, Bare Die;
| 型号： | NVCR4LS2D5N10MCA |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, 100 V, 2.5 mΩ, Bare Die |
| 文件： | 总6页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, N-Channel
100 V, 2.5 mW
NVCR4LS2D5N10MCA
Features
• Typical R
• Typical Q
= 1.9 mꢀ at V = 10 V
GS
DS(on)
= 73 nC at V = 10 V
g(tot)
GS
• AEC−Q101 Qualified
• RoHS Compliant
ORDERING INFORMATION
DIMENSION (mm)
Die Size
Device
Package
5080 × 3683
NVCR4LS2D5N10MCA
Wafer
Sawn on Foil
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
5060 15 × 3663 15
(4448.9 × 1639.6) × 2
390 × 540
RECOMMENDED STORAGE CONDITIONS
Temperature
RH
22 to 28°C
101.6 19.1
40 to 66%
Gate and Source: AlSiCu
Drain: Ti−NiV−Ag (back side of die)
Passivation: Polyimide
Wafer Diameter: 8 inch
Wafer Sawn on UV Tape
Bad Dice Identified in Inking
Gross Die Counts: 1325
The Chip is 100% Probed to Meet the Conditions and Limits
Specified at T = 25°C.
J
Symbol
BV
Parameter
Condition
I = 250 ꢁ A, V = 0 V
D
Min
100
−
Typ
−
Max
−
Unit
V
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Bare Die Drain to Source On Resistance
Source to Drain Diode Voltage
DSS
GS
I
V
DS
V
GS
V
GS
= 100 V, V = 0 V
−
1
ꢁ A
nA
V
DSS
GS
I
=
20 V, V = 0 V
−
−
100
4.0
2.5
1.2
−
GSS
DS
V
GS(th)
= V , I = 250 ꢁ A
2.0
−
−
DS
D
*R
I
D
= 5 A, V = 10 V
1.9
−
mꢀ
DS(on)
GS
V
E
I
= 5 A, V = 0 V
−
V
SD
SD
GS
Single Pulse Drain−to−Source
Avalanche Energy
L = 50 ꢁ H, I = 80 A
160
−
mJ
AS
AS
*Accurate R
test at die level is not feasible for this thin die as limited by the test contact precision attainable in a die form. The max R
DS(on)
DS(on)
DS(on)
specification is defined from the historical performance of the die in package but is not guaranteed by test in production. The die R
performance depends on the Source wire/ribbon bonding layout.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
NVCR4LS2D5N10MCA−DIE/D
June, 2022 − Rev. 0
NVCR4LS2D5N10MCA
MOSFET MAXIMUM RATINGS in Reference to the FDBL86063−F085 electrical data in TOLL
(T = 25°C unless otherwise noted)
J
Symbol
Parameter
Ratings
100
Unit
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current R
V
V
A
V
GS
20
I
D
(V = 10) (Note 1)
GS
ꢂ
J
C
T
C
T
C
= 25°C
252
178
= 100°C
E
Single Pulse Avalanche Energy (Note 2)
Power Dissipation R
160
357
mJ
W
AS
P
D
ꢂ
JC
Derate Above 25°C
2.38
W/°C
°C
T , T
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient (Note 3)
−55 to +175
0.42
J
STG
R
°C/W
°C/W
ꢂ
JC
JA
R
43
ꢂ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by silicon.
2. Starting T = 25°C, L = 50 ꢁ H, I = 80 A, V = 100 V during inductor charging and V = 0 V during time in avalanche.
J
AS
DD
DD
3. R
is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder
ꢂ
JA
mounting surface of the drain pins. R
presented here is based on mounting on a 1 in pad of 2oz copper.
is guaranteed by design, while R
is determined by the board design. The maximum rating
ꢂ
ꢂ
JC
JA
2
ELECTRICAL CHARACTERISTICS in Reference to the FDBL86063−F085 electrical data in TOLL
(T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
I
= 250 ꢁ A, V = 0 V
100
−
−
−
V
DSS
D
GS
I
V
V
= 100 V,
= 0 V
T = 25°C
J
−
1
ꢁ
A
DSS
DS
GS
I
Gate to Source Leakage Current
V
GS
=
20 V
−
−
100
nA
GSS
ON CHARACTERISTICS
V
R
Gate to Source Threshold Voltage
Drain to Source on Resistance
V
I
= V , I = 250 ꢁ A
2.0
−
−
4.0
2.6
5.6
V
GS(th)
GS
DS
D
= 80 A,
= 10 V
T = 25°C
J
2.0
4.2
mꢀ
ꢀ
DS(on)
D
V
GS
T = 175°C (Note 4)
−
m
J
DYNAMIC CHARACTERISTICS
V
= 50 V, V = 0 V, f = 1 MHz
C
Input Capacitance
−
−
−
−
−
−
−
−
5120
3220
32
−
−
−
−
−
−
−
−
pF
DS
GS
iss
C
Output Capacitance
pF
pF
ꢀ
oss
C
Reverse Transfer Capacitance
Gate Resistance
rss
R
f = 1 MHz
0.4
73
g
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 to 10 V, V = 50 V, I = 80 A
nC
nC
nC
nC
g(ToT)
DD
D
Q
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
= 0 to 2 V, V = 50 V, I = 80 A
9
g(th)
DD
D
= 50 V, I = 80 A
Q
22
D
gs
Q
17
gd
SWITCHING CHARACTERISTICS
V
DD
V
GS
= 50 V, I = 80 A,
t
Turn−On Delay
Rise Time
−
−
−
−
25
16
32
8
−
−
−
−
ns
ns
ns
ns
D
d(on)
= 10 V, R
= 6 ꢀ
GEN
t
r
t
Turn−Off Delay
Fall Time
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTIC
V
Source to Drain Diode Voltage
I
= 80 A, V = 0 V
−
−
−
−
−
1.25
1.2
−
V
V
SD
SD
GS
I
= 40 A, V = 0 V
−
SD
GS
I = 80 A, dI /dt = 100 A/ꢁ s,
F
V
t
Reverse Recovery Time
107
175
ns
nC
SD
rr
= 64 V
DD
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
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2
NVCR4LS2D5N10MCA
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
300
270
240
210
180
150
120
90
CURRENT LIMITED
BY PACKAGE
VGS = 10V
60
30
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
T , Case Temperature [5C]
C
T , Case Temperature [5C]
C
Figure 1. Normalized Power Dissipation
vs. Case Temperature
Figure 2. Maximum Continuous Drain
Current vs. Case Temperature
2
DUTY CYCLE − DESCENDING ORDER
1
P
DM
t
0.1
1
t
SINGLE PULSE
2
NOTES:
DUTY FACTOR: D = t
/t
1
2
PEAK T = P x Z
x R + T
qJC
C
qJC
J
DM
0.01
10−5
10−4
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
VGS = 10V
o
T
= 25 C
C
FOR TEMPERATURES
o
100
10
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 − T
C
I = I
25
150
SINGLE PULSE
10−5
10−4
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
NVCR4LS2D5N10MCA
TYPICAL CHARACTERISTICS (continued)
1000
100
10
300
100
If R = 0
tAV = (L)(I AS)/(1.3*RATED BV DSS − V
)
DD
If R ! 0
tAV = (L/R)ln[(I AS*R)/(1.3*RATED BV DSS − VDD) +1]
STARTING T = 25oC
J
100us
10
OPERATION IN THIS
AREA MAY BE
STARTING TJ = 150oC
1ms
LIMITED BY r
DS(on)
1
SINGLE PULSE
T
10ms
= MAX RATED
o
J
100ms
T
C
= 25 C
0.1
1
0.001 0.01
0.1
1
10
100 1000
0.1
1
10
100 200
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to onsemi Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
300
300
VGS = 0 V
PULSE DURATION = 250ꢁ s
DUTY CYCLE = 0.5% MAX
100
250
VDD = 5V
TJ = 175 o
C
200
150
100
50
10
1
TJ = 25oC
TJ = 25 o
C
TJ = −55oC
TJ = 175oC
0
0.1
1
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
300
250
200
150
100
50
300
250
200
150
100
50
250ꢁ s PULSE WIDTH
250ꢁ s PULSE WIDTH
Tj=25oC
Tj=175oC
VGS
15V Top
VGS
15V Top
10V
8V
10V
8V
7V
6V
7V
6V
5.5V
5V Bottom
5.5V
5V Bottom
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
NVCR4LS2D5N10MCA
TYPICAL CHARACTERISTICS (continued)
50
40
30
20
10
0
2.2
PULSE DURATION = 250ꢁ s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 250 ꢁ s
DUTY CYCLE = 0.5% MAX
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 80A
TJ = 175oC
ID = 80A
VGS = 10V
TJ = 25oC
3
4
5
6
7
8
9
10
−80 −40
0
40
80
120
160
200
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature
1.3
1.10
VGS = V
DS
ID = 5mA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
I
D
= 250ꢁ A
1.05
1.00
0.95
0.90
−80
−40
0
40
80
120
160
200
−80 −40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
10
Ciss
ID = 80A
VDD = 50V
VDD = 40V
8
6
4
2
0
Coss
1000
100
10
VDD = 60V
Crss
f = 1MHz
GS = 0V
V
0.1
1
10
100
0
10
20
30
40
50
60
70
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Gate Charge vs. Gate to Source
Voltage
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