NVD6828NLT4G-VF01 [ONSEMI]
单 N 沟道功率 MOSFET 90V，41A，20mΩ;
| 型号： | NVD6828NLT4G-VF01 |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道功率 MOSFET 90V，41A，20mΩ 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NVD6828NL
Power MOSFET
90 V, 20 mW, 41 A, Single N−Channel
Features
• Low R
to Minimize Conduction Losses
• High Current Capability
DS(on)
• Avalanche Energy Specified
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• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
I
D
(BR)DSS
DS(on)
20 mW @ 10 V
25 mW @ 4.5 V
90 V
41 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
90
Unit
V
D
V
DSS
Gate−to−Source Voltage
V
"20
41
V
GS
Continuous Drain Cur-
T
= 25°C
= 100°C
= 25°C
I
A
C
D
N−Channel
rent R
(Notes 1 & 3)
q
JC
G
T
C
29
Steady
State
Power Dissipation R
(Note 1)
T
C
P
83
W
A
q
D
JC
S
T
C
= 100°C
42
Continuous Drain
T = 25°C
A
I
8.7
D
4
Current R
2 & 3)
(Notes 1,
q
JA
T = 100°C
A
6.1
Steady
State
2
1
Power Dissipation R
(Notes 1 & 2)
T = 25°C
A
P
3.8
1.9
206
W
q
D
JA
3
T = 100°C
A
DPAK
CASE 369C
STYLE 2
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
175
°C
J
stg
MARKING DIAGRAMS
& PIN ASSIGNMENT
Source Current (Body Diode)
I
40
90
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
4
Energy (T = 25°C, V = 10 V, I = 24.5 A,
J
GS
L(pk)
Drain
L = 0.3 mH, R = 25 W)
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
Drain
1
3
Gate Source
THERMAL RESISTANCE MAXIMUM RATINGS
Y
WW
= Year
= Work Week
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
R
1.8
40
°C/W
6828L = Device Code
= Pb−Free Package
q
JC
G
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
ORDERING INFORMATION
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
†
Device
Package
Shipping
3. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
NVD6828NLT4G
DPAK
2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2013 − Rev. 1
NVD6828NL/D
NVD6828NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
90
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
87
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
100
mA
DSS
J
V
= 0 V,
= 90 V
GS
DS
V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.5
2.5
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
−6.5
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= 10 V, I = 20 A
16.5
19.1
20
25
mW
pF
DS(on)
GS
D
V
GS
= 4.5 V, I = 20 A
D
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
C
2900
175
126
32
iss
V
GS
= 0 V, f = 1.0 MHz,
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oss
V
DS
= 25 V
C
rss
Q
V
= 4.5 V, V = 72 V,
nC
G(TOT)
GS
DS
= 20 A
I
D
V
GS
= 10 V, V = 72 V,
61
DS
I
= 20 A
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Q
3.3
9.0
16
G(TH)
V
= 10 V, V = 72 V,
DS
GS
Q
GS
I
= 20 A
D
Q
GD
t
14
64
28
43
ns
d(on)
t
r
V
GS
= 10 V, V = 72 V,
DD
I
= 20 A, R = 2.5 W
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V,
T = 25°C
0.84
0.72
35
1.2
V
SD
GS
S
J
I
= 20 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
ta
25
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 20 A
Discharge Time
tb
10
Reverse Recovery Charge
Q
49
nC
RR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVD6828NL
TYPICAL CHARACTERISTICS
80
60
40
80
4.5 V
V
= 10 V
V
DS
≥ 10 V
GS
3.8 V
3.6 V
T = 25°C
J
60
40
3.4 V
3.2 V
T = 25°C
J
20
0
20
0
3.0 V
2.8 V
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN−TO−SOURCE (V)
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.028
0.026
0.024
0.022
0.020
0.018
0.030
0.025
0.020
T = 25°C
I
= 20 A
J
D
T = 25°C
J
V
GS
= 4.5 V
V
GS
= 10 V
0.015
0.010
0.016
0.014
2
4
6
8
10
10
20
30
40
50
60
70
80
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.8
2.2
100 k
V
GS
= 0 V
I
V
= 20 A
D
= 10 V
GS
T = 150°C
J
10 k
1.6
1.0
0.4
T = 125°C
J
1 k
10
−50 −25
0
25
50
75 100 125 150 175
20
30
40
50
60
70
80
90
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVD6828NL
TYPICAL CHARACTERISTICS
4000
3000
2000
10
QT
V
= 0 V
GS
T = 25°C
J
8
6
4
C
iss
Qgs
Qgd
1000
0
V
I
= 72 V
= 20 A
2
0
DS
C
oss
D
T = 25°C
J
C
0
rss
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
80
60
40
V
= 72 V
= 20 A
= 10 V
DS
V
= 0 V
GS
I
D
T = 25°C
J
V
GS
t
r
t
f
20
0
t
d(off)
d(on)
t
1
10
R , GATE RESISTANCE (W)
100
0.50
0.60
0.70
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.80
0.90
1.00
1.10
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1
10 ms
100 ms
1 ms
10 ms
dc
V
GS
= 10 V
Single Pulse
= 25°C
RDS(on) Limit
Thermal Limit
Package Limit
T
C
0.1
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NVD6828NL
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.20
0.10
0.05
0.02
0.1
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 12. Thermal Response
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5
NVD6828NL
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
SEATING
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
PLANE
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
SOLDERING FOOTPRINT*
6.20
3.00
0.244
0.118
2.58
0.102
5.80
1.60
0.063
6.17
0.228
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NVD6828NL/D
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