NVMFS024N06CT1G [ONSEMI]
MOSFET – Power, Single, N-Channel;
| 型号： | NVMFS024N06CT1G |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET – Power, Single, N-Channel |
| 文件： | 总7页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel, SO-8 FL
60 V, 22 mW, 25 A
NVMFS024N06C
Features
• Small Footprint (5x6 mm) for Compact Design
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• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• NVMFWS024N06C − Wettable Flank Option for Enhanced Optical
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Inspection
60 V
22 mW @ 10 V
25 A
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
D (5−8)
Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
G (4)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
S (1,2,3)
N−CHANNEL MOSFET
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
V
DSS
60
20
25
Gate−to−Source Voltage
V
GS
V
MARKING
DIAGRAM
D
Continuous Drain
T
= 25°C
I
D
A
C
Steady
State
Current R
q
JC
T
C
= 100°C
17
(Notes 1, 3)
S
S
S
D
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
Power Dissipation
T
= 25°C
P
D
28
14
8
W
A
C
Steady
State
XXXXXX
AYWZZ
R
(Note 1)
q
JC
T
C
= 100°C
G
Continuous Drain
Current R
T = 25°C
I
D
A
1
Steady
State
D
q
JA
T = 100°C
A
6
(Notes 1, 2, 3)
XXXXXX = 24N06C
XXXXXX = (NVMFS024N06C) or
XXXXXX = 24N06W
Power Dissipation
T = 25°C
P
D
3.4
1.7
158
W
A
Steady
State
R
(Notes 1, 2)
q
JA
T = 100°C
A
XXXXXX = (NVMFWS024N06C)
Pulsed Drain Current T = 25°C, t = 10 ms
I
DM
A
A
p
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Operating Junction and Storage Temperature T , T
−55 to
+175
°C
J
STG
Range
Source Current (Body Diode)
I
S
23
14
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 5.3 A
)
L
pk
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
5.3
Unit
Junction−to−Case – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 1)
R
°C/W
q
JC
R
43.4
q
JA
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
December, 2019 − Rev. 1
NVMFS024N06C/D
NVMFS024N06C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
27
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
DSS
GS
DS
J
V
= 60 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 20 mA
2.0
4.0
22
V
mV/°C
mW
S
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Gate Resistance
V
/T
J
I = 17 mA, ref to 25°C
D
−7.8
18.3
10
GS(TH)
R
V
GS
= 10 V
I = 3 A
D
DS(on)
g
FS
V = 5 V, I = 3 A
DS D
R
T = 25°C
A
0.8
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
333
225
5.05
5.7
ISS
Output Capacitance
C
V
GS
= 0 V, f = 1 MHz, V = 30 V
pF
nC
OSS
RSS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
G(TOT)
Threshold Gate Charge
Q
1.3
G(TH)
V
GS
= 10 V, V = 48 V; I = 3 A
DS D
Gate−to−Source Charge
Q
2.0
GS
Gate−to−Drain Charge
Q
0.68
GD
SWITCHING CHARACTERISTICS, V = 10 V (Note 5)
GS
Turn−On Delay Time
Rise Time
t
6.6
1.3
10
d(ON)
t
r
V
= 10 V, V = 48 V,
DS
GS
D
ns
V
I
= 3 A, R = 6.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.66
23
1.2
SD
RR
J
V
= 0 V,
= 3 A
GS
S
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
11
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
V
= 30 V, I = 3 A
DS
S
Discharge Time
t
b
12
Reverse Recovery Charge
Q
11
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS024N06C
TYPICAL CHARACTERISTICS
50
45
40
35
30
25
20
15
10
25
V
= 10 V to 7 V
GS
6.0 V
20
15
10
5.0 V
4.5 V
T = 25°C
J
5
0
5
0
T = 125°C
J
3.6 V
T = −55°C
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, DRAIN−TO−SOURCE VOLTAGE (V)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
V
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
30
25
30
28
26
24
22
20
T = 25°C
J
T = 25°C
D
J
I
= 3 A
V
GS
= 10 V
20
15
10
5
18
16
5
6
7
8
9
10
3
6
9
12
15
18
21
24
27
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
1.E+04
1.E+03
1.E+02
1.E+01
T = 175°C
J
V
= 10 V
= 3 A
GS
I
D
T = 150°C
J
2.0
1.5
1.0
T = 125°C
J
T = 85°C
J
T = 25°C
J
1.E+00
0.5
0
1.E−01
−50 −25
0
25
50
75
100 125 150 175
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFS024N06C
TYPICAL CHARACTERISTICS
10
9
1000
100
C
ISS
8
7
6
C
OSS
Q
Q
GD
GS
5
4
3
2
1
0
10
1
V
= 48 V
= 3 A
C
DS
RSS
V
= 0 V
GS
I
D
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
10
20
30
40
50
60
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
V
GS
= 0 V
V
V
= 10 V
= 48 V
GS
DS
I
D
= 3 A
1
t
t
d(off)
10
d(on)
t
f
t
r
T = 125°C
T = −55°C
J
T = 25°C
J
J
0.1
1
0
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
100
10
T
= 25°C
J(initial)
10
T
V
= 25°C
C
10 ms
≤ 10 V
GS
Single Pulse
1
T
= 100°C
J(initial)
100 ms
1 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
100 ms & 1 sec
1
0.1
1E−06
1E−05
1E−04
1E−03
1E−02
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVMFS024N06C
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
2%
0.1
1%
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFS024N06CT1G
24N06C
DFN5
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVMFWS024N06CT1G
24N06W
DFN5
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. ANODE
2X
0.905
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
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