NVMFS4C306NT1G [ONSEMI]
Power MOSFET 30V, 116A, 3.4 mΩ, Single N-Channel, SO8-FL, Logic Level.;
| 型号： | NVMFS4C306NT1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30V, 116A, 3.4 mΩ, Single N-Channel, SO8-FL, Logic Level. |
| 文件： | 总8页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel, SO-8 FL
30 V, 3.4 mW, 71 A
NVMFS4C306N
Features
• Low R
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to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• AEC−Q101 Qualified and PPAP Capable
3.4 mW @ 10 V
4.8 mW @ 4.5 V
30 V
71 A
• NVMFS4C306NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
D (5−8)
Compliant
Applications
• Reverse Battery Protection
• DC−DC Converters Output Driver
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
30
Unit
V
V
DSS
MARKING
DIAGRAM
V
GS
20
V
D
Continuous Drain
Current R
T = 25°C
I
20.6
14.5
3
A
A
D
q
JA
S
S
S
G
D
D
1
T = 100°C
A
(Notes 1, 2)
XXXXXX
AYWZZ
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
Power Dissipation
T = 25°C
A
P
W
A
D
R
(Notes 1, 2)
q
JA
D
Continuous Drain
Current R
T
C
= 25°C
I
D
71
50
4C06N = Specific Device Code for
NVMFS4C306N
Steady
State
q
JC
(Notes 1, 2, 3)
4C06WF= Specific Device Code of
NVMFS4C306NWF
Continuous Drain
Current R
T = 100°C
C
q
JC
A
Y
= Assembly Location
= Year
(Notes 1, 2, 3)
W
ZZ
= Work Week
= Lot Traceabililty
Power Dissipation
T
= 25°C
P
36.5
166
W
C
D
R
(Notes 1, 2, 3)
q
JC
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
ORDERING INFORMATION
Operating Junction and Storage Temperature T , T
−55 to
°C
J
STG
Range
+175
†
Device
NVMFS4C306NT1G
Package
Shipping
Source Current (Body Diode)
I
S
28
68
A
SO−8 FL
1500 /
(Pb−Free) Tape & Reel
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (T = 25°C, V = 10 V, I = 37 A ,
J
GS
L
pk
NVMFS4C306NWFT1G SO−8 FL 1500 /
L = 0.1 mH, R = 25 W) (Note 3)
GS
(Pb−Free) Tape & Reel
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. Parts are 100% tested at T = 25°C, V = 10 V, I = 27 Apk, E = 36 mJ.
J
GS
L
AS
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
October, 2020 − Rev. 0
NVMFS4C306N/D
NVMFS4C306N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
4.1
Unit
Junction−to−Case (Drain)
R
q
JC
°C/W
Junction−to−Ambient – Steady State
R
49
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
34
V
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
(transient)
V
V
= 0 V, I
= 12.6 A,
= 100 ns
(BR)DSSt
GS
case
D(aval)
T
= 25°C, t
transient
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
14.4
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
1.0
10
DSS
GS
DS
J
V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.3
0.3
2.1
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
3.8
2.8
4.0
58
mV/°C
GS(TH)
R
V
GS
= 10 V
I
I
= 30 A
= 30 A
3.4
4.8
DS(on)
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
Gate Resistance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
R
T = 25°C
A
1.0
2.0
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
1683
841
40
ISS
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
C
V
= 0 V, f = 1 MHz, V = 15 V
pF
nC
OSS
RSS
GS
DS
C
C
/C
V
GS
= 0 V, V = 15 V, f = 1 MHz
0.023
11.6
2.6
RSS ISS
DS
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
Q
G(TH)
Q
4.7
V
GS
= 4.5 V, V = 15 V; I = 30 A
GS
GD
GP
DS
D
Q
V
4.0
3.1
V
Q
V
GS
= 10 V, V = 15 V; I = 30 A
26
nC
G(TOT)
DS
D
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
t
10
32
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
D
ns
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
18
d(OFF)
t
f
5.0
8.0
28
Turn−On Delay Time
Rise Time
t
d(ON)
t
r
V
= 10 V, V = 15 V,
DS
GS
I
D
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
24
d(OFF)
t
f
3.0
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS4C306N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.63
34
1.1
SD
J
V
S
= 0 V,
GS
V
I
= 10 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
17
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
17
b
Reverse Recovery Charge
Q
22
nC
RR
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVMFS4C306N
TYPICAL CHARACTERISTICS
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
80
4.5 V to 10 V
4.0 V
3.8 V
70
60
50
40
30
20
V
= 5 V
DS
T = 25°C
J
3.6 V
3.4 V
3.2 V
3.0 V
T = 25°C
J
T = 125°C
J
2.8 V
10
0
V
= 2.6 V
GS
T = −55°C
J
0
1
2
3
4
5
0
0.5 1.0 1.5
2.0 2.5
3.0 3.5 4.0 4.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.018
0.0060
0.0055
0.0050
I
D
= 30 A
T = 25°C
J
0.016
0.014
0.012
0.010
0.008
0.006
V
= 4.5 V
= 10 V
GS
0.0045
0.0040
0.0035
0.0030
V
GS
0.0025
0.0020
0.004
0.002
3
4
5
6
7
8
9
10
10
20
30
40
50
60
70
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.5
2000
1800
V
= 10 V
= 30 A
C
GS
iss
I
D
1600
1400
1200
1000
800
C
V
GS
= 0 V
oss
T = 25°C
J
1.0
0.5
600
400
200
0
C
rss
−50 −25
0
25
50
75 100 125 150 175
0
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Capacitance Variation
Temperature
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4
NVMFS4C306N
TYPICAL CHARACTERISTICS
10
8
1000
V
V
= 10 V
= 15 V
Q
GS
T
DD
I
D
= 15 A
t
d(off)
100
t
f
6
4
t
r
Q
6
Q
GD
t
d(on)
GS
10
1
V
V
= 10 V
= 15 V
= 30 A
GS
DD
2
0
I
D
T = 25°C
J
0
2
4
8
10 12 14 16 18 20 22 24 26
1
10
R , GATE RESISTANCE (W)
100
Q , TOTAL GATE CHARGE (nC)
G
G
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
20
18
16
1000
100
10
0 V < V < 10 V
GS
V
GS
= 0 V
10 ms
14
12
10
8
100 ms
T = 25°C
J
T = 125°C
J
1 ms
10 ms
1
6
4
R
Limit
DS(on)
0.1
dc
Thermal Limit
Package Limit
2
0
0.01
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.01
0.1
1
10
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
R , GATE RESISTANCE (W)
G
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
130
120
110
100
90
100
80
70
60
10
50
40
30
20
10
0
1
1.E−08 1.E−07
1.E−06
1.E−05
1.E−04 1.E−03
0
5
10 15 20 25 30 35 40 45 50 55 60
(A)
PULSE WIDTH (sec)
I
D
Figure 12. Avalanche Characteristics
Figure 11. GFS vs. ID
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5
NVMFS4C306N
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
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6
NVMFS4C306N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
RECOMMENDED
STYLE 1:
SOLDERING FOOTPRINT*
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
2X
0.495
SIDE VIEW
DETAIL A
4.560
2X
5. DRAIN
1.530
8X b
A B
0.10
0.05
C
c
e/2
e
2X
0.475
L
3.200
1.330
1
4
4.530
K
2X
0.905
E2
PIN 5
(EXPOSED PAD)
M
1
L1
0.965
4X
D2
BOTTOM VIEW
1.000
G
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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