NVMFWS003N10MCT1G [ONSEMI]
MOSFET - Power, Single, N-Channel 100 V, 3.1mΩ, 169A;
| 型号： | NVMFWS003N10MCT1G |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Single, N-Channel 100 V, 3.1mΩ, 169A |
| 文件： | 总7页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel
100 V, 3.1 mW, 169 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
100 V
3.1 mW @ 10 V
169 A
D (5,6)
NVMFWS003N10MC
Features
• Small Footprint (5x6 mm) for Compact Design
G (4)
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
S (1,2,3)
N−CHANNEL MOSFET
• AEC−Q101 Qualified and PPAP Capable
• Wettable Flank Product
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
and are RoHS Compliant
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
1
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
XXXXXX
AYWZZ
DFNW5
CASE 507BA
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
169
119
194
97
A
XXXXXX = Specific Device Code
C
D
Current R
(Note 1)
q
JC
A
Y
= Assembly Location
= Year
T
C
Steady
State
Power Dissipation
(Note 1)
T
C
P
W
A
W
ZZ
= Work Week
= Lot Traceability
D
R
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
23.7
16.8
3.8
q
JA
T = 100°C
A
(Notes 1, 2)
Steady
State
ORDERING INFORMATION
Power Dissipation
T = 25°C
A
P
W
D
Device
NVMFWS003N10MCT1G
Package Shipping†
R
(Notes 1, 2)
q
JA
T = 100°C
A
1.9
DFNW5
1500 /
Tape &
Reel
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
(Pb−Free)
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Source Current (Body Diode)
I
149
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
1307
mJ
Energy (I
= 11.9 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
0.77
39
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using 1 in pad size, 2 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
April, 2022 − Rev. 1
NVMFWS003N10MC/D
NVMFWS003N10MC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
50
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
DS
= 0 V,
GS
V
= 100 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Gate−Resistance
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 351 mA
2
4
V
mV/°C
mW
S
GS(TH)
GS
DS
D
V
/T
J
I = 250 mA, ref to 25°C
D
−9.3
2.6
GS(TH)
R
V
= 10 V, I = 50 A
3.1
DS(on)
GS
DS
D
g
FS
V
= 10 V, I = 50 A
150
0.40
D
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
4650
2400
33
pF
nC
ISS
Output Capacitance
C
V
V
= 0 V, f = 1 MHz, V = 50 V
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
62
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
14
G(TH)
Q
22
= 10 V, V = 50 V, I = 50 A
GS
GD
GP
GS
DS
D
Q
V
10
Plateau Voltage
5
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
28
15
46
14
ns
d(ON)
Rise Time
t
r
V
= 10 V, V = 50 V,
DS
GS
D
I
= 50 A, R = 6 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.80
0.67
72
1.3
V
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Charge Time
t
ns
nC
ns
ns
RR
Q
91
RR
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 31 A
t
34
a
Discharge Time
t
b
38
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
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2
NVMFWS003N10MC
TYPICAL CHARACTERISTICS
250
V
GS
= 10 V
5.5 V
140
120
100
80
V
DS
= 10 V
5.3 V
5.1 V
200
150
100
4.9 V
T = 25°C
J
60
4.7 V
4.5 V
40
50
0
4.3 V
4.0 V
20
T = 150°C
J
T = −55°C
J
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9
4
3
2
T = 25°C
D
T = 25°C
J
J
I
= 50 A
8
7
V
GS
= 10 V
6
5
4
3
1
0
2
1
0
4
5
6
7
8
9
10
5
10
15
20
25
30
35
40
45
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
1.5
100
10
T = 175°C
J
V
= 10 V
= 50 A
GS
I
D
T = 150°C
J
T = 125°C
J
1
0.1
0.01
T = 85°C
J
1.0
0.5
T = 25°C
J
0.001
0.0001
−50 −25
0
25
50
75 100 125 150 175
10 20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFWS003N10MC
TYPICAL CHARACTERISTICS
10K
1K
10
9
C
ISS
8
7
6
5
4
3
C
OSS
Q
Q
GD
GS
100
C
RSS
10
1
T = 25°C
V
= 0 V
J
GS
2
1
0
I
D
= 50 A
T = 25°C
J
V
DS
= 50 V
f = 1 MHz
0
10
20
30
40
50
60
0
10 20 30 40
50 60 70 80
90 100
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
V
GS
= 0 V
V
V
= 10 V
= 50 V
= 50 A
GS
DS
t
d(off)
I
D
t
f
t
r
10
t
d(on)
10
1
T = 125°C
J
T = 25°C
T = −55°C
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
J(initial)
10
10 ms
T
= 25°C
C
T
= 150°C
J(initial)
Single Pulse
V
0.5 ms
1 ms
10 ms
≤ 10 V
GS
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
0.0001
0.001
t , TIME IN AVALANCHE (s)
AV
0.01
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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NVMFWS003N10MC
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.000001 0.00001 0.0001
0.01
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
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5
NVMFWS003N10MC
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
q
q
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6
NVMFWS003N10MC
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