NVMFWS004N10MCT1G [ONSEMI]
MOSFET - Power, Single, N-Channel 100 V, 3.9mΩ, 138A;
| 型号： | NVMFWS004N10MCT1G |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Single, N-Channel 100 V, 3.9mΩ, 138A |
| 文件： | 总7页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Power, Single
N-Channel
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
100 V
3.9 mW @ 10 V
138 A
100 V, 3.9 mW, 138 A
D (5,6)
NVMFWS004N10MC
G (4)
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
S (1,2,3)
N−CHANNEL MOSFET
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
and are RoHS Compliant
MARKING
DIAGRAM
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S
S
S
G
D
D
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
DFN5
(SO8FL WF)
CASE 507BA
XXXXXX
AYWZZ
V
DSS
Gate−to−Source Voltage
V
GS
V
D
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
138
98
A
C
D
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Current R
(Note 1)
q
JC
T
C
Steady
State
Power Dissipation
(Note 1)
T
C
P
164
82
W
A
D
R
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
21
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
q
JA
T = 100°C
A
15
(Notes 1, 2)
Steady
State
Power Dissipation
T = 25°C
A
P
3.8
1.9
900
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
126
536
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 9.2 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
0.91
39
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using 1 in pad size, 2 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2022 − Rev. 0
NVMFWS004N10MC/D
NVMFWS004N10MC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
56
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
DS
= 0 V,
GS
V
= 100 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES & CAPACITANCES
Input Capacitance
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 270 mA
2
4
V
mV/°C
mW
S
GS(TH)
GS
DS
D
V
/T
J
I = 250 mA, ref to 25°C
D
−9.1
3.3
GS(TH)
R
V
= 10 V, I = 48 A
3.9
DS(on)
GS
DS
D
g
FS
V
= 10 V, I = 48 A
120
D
C
3600
1700
30
pF
nC
ISS
Output Capacitance
C
C
V
V
= 0 V, f = 1 MHz, V = 50 V
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
48
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
11
G(TH)
Q
18
= 10 V, V = 50 V, I = 48 A
GS
GD
GP
GS
DS
D
Q
V
8
Plateau Voltage
5.2
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
25
18
39
13
ns
d(ON)
Rise Time
t
r
V
= 10 V, V = 50 V,
DS
GS
D
I
= 48 A, R = 6 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.84
0.73
65
1.3
V
SD
J
V
S
= 0 V,
GS
I
= 48 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Charge Time
t
ns
nC
ns
ns
RR
Q
73
RR
V
GS
= 0 V, di/dt = 100 A/ms,
I
S
= 24 A
t
30
S
Discharge Time
t
35
D
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
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2
NVMFWS004N10MC
TYPICAL CHARACTERISTICS
140
120
100
80
200
6 V
V
DS
= 10 V
V
= 6.5 V
to10 V
180
160
140
120
100
80
GS
5.5 V
T = 125°C
J
60
60
40
T = 25°C
J
40
5 V
20
T = −55°C
J
20
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
14
12
10
8
5
4
3
2
1
T = 25°C
D
T = 25°C
J
J
I
= 48 A
V
= 10 V
GS
6
4
2
0
10
15
20
25
30
35
40
45
50
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1000
100
2.5
2
V
= 10 V
= 48 A
T = 175°C
GS
J
I
D
T = 150°C
J
10
T = 125°C
J
1
T = 85°C
J
0.1
1.5
1
0.01
0.001
0.0001
0.00001
T = 25°C
J
0.5
−50 −25
0
25
50
75
100 125 150 175
10
20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFWS004N10MC
TYPICAL CHARACTERISTICS
10000
1000
100
10
10
C
ISS
9
8
7
6
5
4
3
2
1
0
C
OSS
Q
GS
Q
GD
C
RSS
V
= 50 V
DS
V
= 0 V
GS
T = 25°C
J
T = 25°C
J
I
D
= 48 A
f = 1 MHz
1
0
10 20 30 40 50 60 70 80 90 100
, DRAIN−TO−SOURCE VOLTAGE (V)
0
5
10 15 20 25 30 35 40 45 50
Q , TOTAL GATE CHARGE (nC)
V
DS
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
T = 175°C
J
100
10
V
V
= 10 V
= 50 V
= 48 A
V
GS
= 0 V
GS
DS
T = 125°C
t
r
J
I
D
t
d(on)
T = 85°C
J
t
d(off)
T = 25°C
J
t
f
T = −55°C
J
1
1
1
10
R , GATE RESISTANCE (W)
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
, SOURCE−TO−DRAIN VOLTAGE (V)
1
V
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
V
≤ 10 V
GS
Single Pulse
= 25°C
T
C
10 ms
T
= 25°C
J(initial)
10
0.5 ms
1 ms
T
= 100°C
J(initial)
1
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.0001
0.1
0.001
TIME IN AVALANCHE (s)
0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMFWS004N10MC
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFWS004N10MCT1G
004W10
Wettable Flank DFN5
1500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
DATE 03 FEB 2021
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON26450H
DFNW5 5x6 (FULL−CUT SO8FL WF)
PAGE 1 OF 1
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