NVMFWS0D4N04XMT1G [ONSEMI]
Single N-Channel Power MOSFET 40 V, 509 A, 0.42mΩ;
| 型号： | NVMFWS0D4N04XMT1G |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 40 V, 509 A, 0.42mΩ |
| 文件： | 总7页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel, STD Gate,
SO8-FL
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
40 V
0.42 mW @ 10 V
509 A
D (5)
40 V, 0.42 mW, 509 A
NVMFWS0D4N04XM
G (4)
Features
• Low R
to Minimize Conduction Losses
S (1,2,3)
DS(on)
• Low Capacitance to Minimize Driver Losses
• Small Footprint (5x6 mm) with Compact Design
N−CHANNEL MOSFET
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DFNW5 (SO−8FL WF)
• Motor Drive
CASE 507BD
• Battery Protection
• Synchronous Rectification
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
D
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
S
S
S
G
D
D
V
DSS
0D4N4W
AYWZZ
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain Current
T
T
T
= 25°C
= 100°C
= 25°C
I
D
509
360
197
900
900
A
C
C
C
D
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Power Dissipation
P
D
W
A
Pulsed Drain Current
T = 25°C,
t = 10 ms
I
DM
A
p
Pulsed Source Current
(Body Diode)
I
SM
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
STG
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
+175
Source Current (Body Diode)
I
S
311
A
Single Pulse Avalanche
Energy
I
PK
= 38.6 A
E
AS
2396
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case
(Note 2)
R
0.76
°C/W
q
JC
Thermal Resistance, Junction−to−Ambient
(Notes 1, 2)
R
38.2
q
JA
2
1. Surface−mounted on FR4 board using 650 mm , 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
NVMFWS0D4N04XM/D
July, 2022 − Rev. 2
NVMFWS0D4N04XM
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 250 mA, T = 25°C
40
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 250 mA, Referenced to 25°C
14.9
mV/°C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
I
V
DS
= 40 V, T = 25°C
1
mA
DSS
J
V
DS
= 40 V, T = 125°C
80
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 20 V, V = 0 V
100
nA
GSS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
V
= 10 V, I = 50 A, T = 25°C
0.33
3
0.42
3.5
mW
V
DS(ON)
GS
D
J
V
GS
= V , I = 330 mA, T = 25°C
2.5
GS(TH)
DS
D
J
Gate Threshold Voltage Temperature
Coefficient
DV
/
V
GS
= V , I = 330 mA
−7.21
mV/°C
GS(TH)
DS
D
DT
J
Forward Trans−conductance
g
FS
V
DS
= 5 V, I = 50 A
286
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 25 V, V = 0 V, f = 1 MHz
8530
5451
72
pF
ISS
DS
GS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
Q
V
DD
= 32 V, I = 50 A, V = 10 V
132
nC
G(TOT)
D
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
24.9
37.2
23.7
0.42
G(TH)
Q
GS
Q
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
Resistive Load, V = 0/10 V,
9.98
5.49
15.5
8.41
ns
d(ON)
GS
V
= 32 V, I = 50 A, R = 0 W
DD
D G
t
r
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
I
= 50 A, V = 0 V, T = 25°C
0.79
0.63
148
47.3
101
337
1.2
V
SD
S
GS
J
I
S
= 50 A, V = 0 V, T = 125°C
GS J
Reverse Recovery Time
Charge Time
t
V
= 0 V, I = 50 A,
ns
RR
GS
S
dI/dt = 100 A/ms, V = 32 V
DD
t
t
a
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DEVICE ORDERING INFORMATION
†
Device
Marking
Package
Shipping
NVMFWS0D4N04XMT1G
0D4N4W
DFNW5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NVMFWS0D4N04XM
TYPICAL CHARACTERISTICS
1200
1000
800
600
400
200
0
1200
V
GS=4.5V
T
VDS =5V
J=25°C
VGS=5V
VGS=5.5V
1000
800
600
400
200
0
V
GS=6V
V
GS=7V
VGS=8V
GS=9V
VGS=10V
V
T
J=−55°C
T
J=25°C
T
J=175°C
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
7
VDS, Drain to Source Voltage(V)
VGS, Gate to Source Voltage(V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6
0.45
0.4
T
J=25°C
ID=50A
T
J=25°C
T
J=175°C
5
4
3
2
1
0
0.35
0.3
VGS=10V
GS=12V
V
0.25
4
5
6
7
8
9
10
0
100 200 300 400 500 600 700 800 900 1000
ID, Drain Current(A)
VGS, Gate to Source Voltage(V)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
2
1e−04
1e−05
ID=50A
V
GS
= 0 V
1.8
1.6
1.4
1.2
1
1e−06
1e−07
1e−08
T = 25°C
T = 150°C
J
J
1e−09
1e−10
T = 85°C
T = 175°C
J
J
0.8
T = 125°C
J
0.6
5
10
15
20
25
30
35
40
−75 −50 −25
0
25
50
75 100 125 150 175
T
J, Junction Temperature(°C)
V
DS
, Drain to Source Voltage (V)
Figure 5. Normalized ON Resistance vs.
Junction Temperature
Figure 6. Drain to Source Voltage vs Drain
Leakage
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3
NVMFWS0D4N04XM
TYPICAL CHARACTERISTICS (Continued)
100000
10000
1000
100
10
VGS=0V
ID=50A
T
J=25°C
f=1MHz
8
6
4
2
0
=8V
VDD
VDD
VDD
CISS
COSS
CRSS
=24V
=32V
10
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
120
140
160
VDS, Drain to Source Voltage(V)
QG, Gate Charge(nC)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1e−05
1e−06
1e−07
1e−08
1000
100
10
VGS=10V
VDS=32V
ID=50A
VGS=0V
1
0.1
0.01
td(on)
td(off)
tr
T
J=175°C
T
J=25°C
T
J=−55°C
tf
1e−09
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
RG, Gate Resistance(Ohm)
VSD, Body Diode Forward Voltage(V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Characteristics
T
T
= 25°C
= 175°C
C
J
1000
100
10
Single Pulse
100
25(°C)
Ron limit
Package limit
BV limit
100(°C)
pulseDuration = 0.5 ms
pulseDuration = 1 ms
pulseDuration = 10 ms
1
10
0.1
0.0001
0.001
Tav (s)
0.01
0.1
1
10
V
DS
, Drain to Source Voltage (V)
Figure 11. Safe Operating Area (SOA)
Figure 12. Avalanche Current vs. Pulse Time
(UIS)
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4
NVMFWS0D4N04XM
TYPICAL CHARACTERISTICS (Continued)
1.2
1.1
1
0.9
0.8
0.7
0.6
−75 −50 −25
0
25
50
75 100 125 150 175
T
J, Junction Temperature(°C)
Figure 13. Gate Threshold Voltage vs.
Junction Temperature
100
D = 0 is Single Pulse
10
1
D = 0.00
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0.1
Notes:
= P
P
DM
T
x Z
(t) + T
qJA A
JM
DM
0.01
t
1
Duty Cycle, D = t /t
2
1
t
2
0.001
1e−06
1e−05
1e−04
1e−03
1e−02
1e−01
1e+00
1e+01
1e+02
1e+03
t, Rectangular Pulse Duration (s)
Figure 14. Thermal Response
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFNW5 5x6, FULL−CUT SO8FL WF
CASE 507BD
ISSUE O
DATE 13 APR 2021
q
q
GENERIC
MARKING DIAGRAM*
XXXXXX
AYWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Assembly Lot
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON31027H
DFNW5 5x6, FULL−CUT SO8FL WF
PAGE 1 OF 1
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