NVMJD027N06CLTWG [ONSEMI]
Dual N−Channel Power MOSFET 60V, 21A, 26.5mΩ;
| 型号： | NVMJD027N06CLTWG |
| 厂家： | 
ONSEMI |
| 描述： | Dual N−Channel Power MOSFET 60V, 21A, 26.5mΩ |
| 文件： | 总6页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Dual
N-Channel
60 V, 27 mW, 21 A
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
27 mW @ 10 V
41 mW @ 4.5 V
60 V
21 A
NVMJD027N06CL
Features
• Small Footprint (5 x 6 mm) for Compact Design
Dual N−Channel
D1
D2
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
DS(on)
G1
G2
• These Devices are Pb−Free and are RoHS Compliant
S1
S2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
MARKING
DIAGRAM
D1 D1 D2 D2
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
21
A
C
D
q
JC
027N06
CL
AWLYW
T
C
15
(Notes 1, 2, 3, 4)
Steady
State
LFPAK8
CASE 760AF
Power Dissipation
T
C
P
24
W
A
D
R
(Notes 1, 2, 3)
q
JC
T
C
= 100°C
12
1
Continuous Drain
Current R
T = 25°C
A
I
D
7.7
5.5
3.2
1.6
69
S1 G1 S2 G2
q
JA
027N06CL = Specific Device Code
T = 100°C
A
(Notes 1, 3, 4)
Steady
State
A
WL
Y
= Assembly Location
= Wafer Lot
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 3)
q
JA
= Year
T = 100°C
A
W
= Work Week
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Source Current (Body Diode)
I
20
57
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 0.8 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
6.28
Unit
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
R
46.6
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which substantially
less than 100% of the heat flows to single case surface.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
September, 2022 − Rev. 1
NVMJD027N06CL/D
NVMJD027N06CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
30.8
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
GS
DS
V
= 60 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = +20 V
nA
GSS
DS
GS
V
V
= V , I = 13 mA
1.2
2.2
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 13 mA, ref to 25°C
D
−5.95
23
mV/°C
mW
GS(TH)
J
R
V
GS
GS
= 10 V, I = 9 A
27
41
DS(on)
D
V
= 4.5 V, I = 9 A
33
D
CHARGES AND CAPACITANCES
Input Capacitance
C
V
GS
= 0 V, f = 1.0 MHz,
DS
335
153
4
pF
nC
iss
V
= 30 V
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
5
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
0.3
1
G(TH)
V
GS
= 10 V, V = 48 V, I = 9 A
DS D
Q
GS
Q
0.7
GD
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
6.8
6
ns
d(on)
t
r
V
GS
I
= 4.5 V, V = 48 V,
DS
= 9 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
8.2
3
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V,
= 9 A
T = 25°C
0.9
0.8
17
9
1.2
V
SD
GS
S
J
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
GS
= 0 V, dl /dt = 100 A/ms,
S
I
S
= 9 A
Discharge Time
8
b
Reverse Recovery Charge
Q
7.0
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVMJD027N06CL
TYPICAL CHARACTERISTICS
30
25
20
15
10
25
V
GS
= 4.5 V to 10 V
V
DS
= 5 V
4.0 V
20
15
10
3.6 V
3.2 V
2.8 V
T = 25°C
J
5
0
5
0
T = 175°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
50
45
40
35
30
25
50
45
40
35
30
T = 25°C
J
T = 25°C
D
J
I
= 9 A
V
= 4.5 V
= 10 V
GS
V
GS
25
20
20
15
3
4
5
6
7
8
9
10
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100000
10000
1000
V
= 10 V
= 9 A
GS
2.0
1.5
I
D
T = 175°C
J
T = 150°C
J
T = 125°C
J
1.0
0.5
0
T = 85°C
J
100
10
T = 25°C
J
5
10 15 20 25 30 35 40 45 50 55 60
−50 −25
0
25
50
75 100 125 150
175
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMJD027N06CL
TYPICAL CHARACTERISTICS
10
9
1000
100
Q
total
C
ISS
8
7
6
5
4
3
2
C
OSS
Q
Q
GS
GD
10
1
V
DS
= 48 V
C
V
= 0 V
RSS
GS
T = 25°C
J
T = 25°C
J
1
0
I
D
= 9 A
f = 1 MHz
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
10
V
= 0 V
GS
10
T = 125°C
J
t
T = 175°C
d(off)
J
1
t
d(on)
t
r
1
t
f
V
V
I
= 4.5 V
= 48 V
= 9 A
GS
DS
T = −55°C
T = 25°C
D
J
J
0.1
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3 0.4 0.5 0.6
0.7 0.8
0.9 1.0 1.1 1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
T
V
= 25°C
C
≤ 10 V
GS
Single Pulse
100
10
T (initial) = 25°C
J
1
T (initial) = 150°C
J
1
R
Limit
10 ms
DS(on)
Thermal Limit
Package Limit
0.5 ms
1 ms
1000
10 ms
100
0.1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
(V)
V
DS
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMJD027N06CL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
0.1
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMJD027N06CLTWG
027N06CL
LFPAK8 Dual
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMJD027N06CL
PACKAGE DIMENSIONS
LFPAK8 5.15x6.15
CASE 760AF
ISSUE O
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