NVMJST1D2N04CTXG [ONSEMI]
Single N-Channel Power MOSFET 40V, 268A, 1.2 mΩ on Top Cool Package;型号: | NVMJST1D2N04CTXG |
厂家: | ONSEMI |
描述: | Single N-Channel Power MOSFET 40V, 268A, 1.2 mΩ on Top Cool Package |
文件: | 总7页 (文件大小:322K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single
N-Channel
40 V, 1.25 mW, 451 A
V
R
MAX
I
MAX
(BR)DSS
DS(ON)
D
40 V
1.25 mW @ 10 V
451 A
D (6,7,8,9,10,TOP)
NVMJST1D2N04C
Features
• Small Footprint (5x7 mm) for Compact Design
G (1)
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
S (2,3,4,5)
• TCPAK57 5x7 Top Cool Package
N−CHANNEL MOSFET
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
20
V
GS
TCPAK57
CASE 760AG
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
451
319
454
227
900
A
C
D
q
JC
T
C
(Notes 1, 3)
Steady
State
MARKING DIAGRAM
Power Dissipation
T
C
P
W
D
R
(Note 1)
q
JC
T
C
= 100°C
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
379
A
Single Pulse Drain−to−Source Avalanche
E
AS
1541
mJ
Energy (I
= 24 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
XXXX = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Assembly Lot Code
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.33
29
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Drain Lead
R
°C/W
q
JC
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
R
q
JA
Y
5.2
JL
JL
JH
Junction−to−Source Lead
Y
5.16
1.5
Junction−to−Heatsink Top (Note 2)
Y
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. 2s2p JEDEC51−7 standard PCB mounted to a 25x25x3 (mm) aluminum
heatsink with a 12 w/mK TIM interface.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
September, 2022 − Rev. 0
NVMJST1D2N04C/D
NVMJST1D2N04C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
20
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 40 V
mA
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 200 mA
2.0
4.0
V
mV/°C
mW
S
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
J
−7.7
1.06
161
GS(TH)
R
V
GS
= 10 V
I = 50 A
D
1.25
DS(on)
g
FS
V
= 5 V, I = 50 A
DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
5340
3500
140
82
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 20 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
GS
= 10 V, V = 32 V; I = 50 A
DS D
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
5.3
21
G(TH)
nC
V
Q
GS
GD
GP
V
GS
= 10 V, V = 32 V; I = 50 A
DS
D
Q
V
23
4.7
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
22
19
54
20
d(ON)
Rise Time
t
r
V
= 10 V, V = 32 V,
DS
GS
D
ns
V
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.65
113
52
1.2
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
61
b
Reverse Recovery Charge
Q
236
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMJST1D2N04C
TYPICAL CHARACTERISTICS
500
500
450
400
350
300
250
200
150
V
= 10 V to 8.0 V
450
GS
6.0 V
400
350
300
250
5.2 V
200
T = 25°C
J
150
4.8 V
100
100
50
0
T = 125°C
J
4.4 V
4.0 V
50
0
T = −55°C
J
0
1
2
3
3
3.5
4
4.5
5
5.5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
2.0
T = 25°C
J
T = 25°C
D
J
1.75
I
= 50 A
1.5
1.25
1.0
V
GS
= 10 V
0.75
0.5
1
0
0.25
0
4
5
6
7
8
9
10
20
60
100
140
180
220
260
300
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1M
100K
10K
1K
V
= 10 V
= 50 A
GS
T = 175°C
J
I
D
1.75
1.5
T = 125°C
J
T = 85°C
J
1.25
1.0
100
10
1
T = 25°C
J
0.75
0.5
−50 −25
0
25
50
75
100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMJST1D2N04C
TYPICAL CHARACTERISTICS
10
10K
1K
9
8
7
6
5
4
3
C
ISS
C
OSS
Q
Q
GS
GD
100
C
RSS
10
1
V
DS
= 32 V
V
= 0 V
2
1
0
GS
I
D
= 50 A
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
10
t
d(off)
V
GS
= 0 V
t
f
t
r
100
t
d(on)
10
1
1
T = 125°C
J
V
V
= 10 V
= 32 V
= 50 A
GS
DS
I
D
T = −55°C
T = 25°C
J
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
T
= 25°C
J(initial)
T
= 100°C
J(initial)
T
V
= 25°C
C
0.5 ms
1 ms
10 ms
10
1
≤ 10 V
GS
Single Pulse
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMJST1D2N04C
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
20%
0.1
10%
5%
2%
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMJST1D2N04CTXG
1D24C
TCPAK57
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMJST1D2N04C
PACKAGE DIMENSIONS
LFPAK10 7.5x5
CASE 760AG
ISSUE C
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6
NVMJST1D2N04C
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