NVMTS0D4N04CLTXG [ONSEMI]
单 N 沟道,功率 MOSFET,40V,553.8A,0.4mΩ;型号: | NVMTS0D4N04CLTXG |
厂家: | ONSEMI |
描述: | 单 N 沟道,功率 MOSFET,40V,553.8A,0.4mΩ |
文件: | 总7页 (文件大小:397K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel
40 V, 0.4 mW, 553.8 A
NVMTS0D4N04CL
Features
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• Small Footprint (8x8 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
0.4 mW @ 10 V
40 V
553.8 A
0.64 mW @ 4.5 V
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
D (5−8)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
G (1)
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
S (2−4)
Gate−to−Source Voltage
V
GS
20
V
N−CHANNEL MOSFET
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
553.8
394.8
244
122
79.8
56.4
5.0
A
C
D
D
Current R
(Note 2)
q
JC
T
C
I
A
Steady
State
Power Dissipation
(Note 2)
T
C
P
P
I
W
W
A
D
R
q
JC
T
C
= 100°C
D
Continuous Drain
Current R
T = 25°C
A
D
q
JA
T = 100°C
A
I
D
A
(Notes 1, 2)
Steady
State
Power Dissipation
T = 25°C
A
P
P
W
W
A
D
POWER 88
CASE 507AP
R
(Notes 1, 2)
q
JA
T = 100°C
A
2.5
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+ 175
°C
J
stg
MARKING DIAGRAM
Source Current (Body Diode)
I
203.4
4454
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 70 A)
XXXXXXXX
AWLYWW
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXX = Device Code
(8 A−N characters max)
A
= Assembly Location
THERMAL RESISTANCE MAXIMUM RATINGS
WL = 2−digit Wafer Lot Code
= Year Code
WW = Work Week Code
Parameter
Symbol
Value
0.61
Unit
Y
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
30.1
q
JA
2
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. Surface−mounted on FR4 board using a 1 in pad size, 1 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2020 − Rev. 2
NVMTS0D4N04CL/D
NVMTS0D4N04CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
8.86
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
DSS
GS
DS
J
mA
V
= 32 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.0
2.5
V
GS(TH)
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I
= 250 mA, ref to 25°C
−6.24
0.3
mV/°C
GS(TH)
J
D
R
V
GS
GS
= 10 V
= 4.5 V
I
= 50 A
= 50 A
0.4
DS(on)
D
D
mW
V
I
0.45
330
1.0
0.64
Forward Transconductance
Gate Resistance
g
FS
V
DS
=5 V, I = 50 A
S
D
R
T = 25°C
A
W
G
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
20600
9500
390
163
29.8
51
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 20 V
pF
GS
DS
Q
V
= 4.5 V, V = 20 V; I = 50 A
G(TOT)
GS DS D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
Q
nC
V
GS
Q
52.1
341
2.7
V
GS
= 10 V, V = 20 V; I = 50 A
DS D
GD
Q
G(TOT)
Voltage Plateau
V
GP
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4)
GS
Turn−On Delay Time
Rise Time
t
110
147
217
107
d(ON)
t
r
V
= 4.5 V, V = 20 V,
DS
GS
D
ns
I
= 50 A, R = 6 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
SWITCHING CHARACTERISTICS, V = 10 V (Note 4)
GS
Turn−On Delay Time
Rise Time
t
45.6
39.8
382
d(ON)
t
r
V
= 10 V, V = 20 V,
DS
GS
D
ns
V
I
= 50 A, R = 6 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
96.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.75
0.58
117
87
1.2
SD
RR
J
V
S
= 0 V,
= 50 A
GS
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
b
30
Reverse Recovery Charge
Q
336
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NVMTS0D4N04CL
TYPICAL CHARACTERISTICS
800
700
600
500
400
300
200
800
V
GS
= 3.8 V to 10 V
700
600
500
400
300
200
V
DS
= 3 V
3.4 V
3.6 V
3.2 V
T = 25°C
J
100
0
100
0
T = 125°C
T = −55°C
J
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T = 25°C
D
T = 25°C
D
J
J
I
= 50 A
I
= 50 A
V
= 4.5 V
= 10 V
GS
V
GS
0.2
0
0.1
0
3
4
5
6
7
8
9
10
100
200
300
400
500
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1E−01
1E−02
1E−03
1E−04
1E−05
1E−06
V
= 10 V
= 50 A
GS
1.8
1.6
1.4
1.2
1.0
0.8
I
D
T = 175°C
J
T = 150°C
J
T = 125°C
J
T = 85°C
J
T = 25°C
1E−07
1E−08
J
0.6
0.4
−50 −25
0
25
50
75 100 125 150 175
10
12
V
14
16
18
20
22
24
T , JUNCTION TEMPERATURE (°C)
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMTS0D4N04CL
TYPICAL CHARACTERISTICS
100K
10K
10
9
8
7
6
5
C
C
ISS
OSS
4
3
2
1
0
Q
Q
GD
GS
1K
V
= 0 V
V
= 20 V
GS
DS
T = 25°C
T = 25°C
J
J
f = 1 MHz
I
D
= 50 A
C
RSS
100
0.1
1
10
100
0
50
100
150
200
250
300
350
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1E−05
1E−06
40
30
20
V
= 0 V
V
V
= 10 V
= 20 V
= 50 A
GS
GS
DS
t
t
d(off)
I
D
T = 175°C
J
t
f
T = 150°C
J
t
r
T = 125°C
J
d(on)
1E−07
1E−08
T = 25°C
J
10
0
T = −55°C
J
10
15
20
25
30
35
40
45
50
0
0.2
0.4
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.8
1.0
1.2
R , GATE RESISTANCE (W)
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
10 ms
T
= 25°C
J(initial)
0.5 ms
1 ms
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
T
= 100°C
10
1
J(initial)
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.0001
0.001
TIME IN AVALANCHE (s)
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMTS0D4N04CL
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMTS0D4N04CLTXG
0D4N04CL
POWER 88
(Pb−Free)
TBD / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TDFNW8 8.3x8.4, 2.0P, SINGLE COOL
CASE 507AP
ISSUE D
DATE 29 MAR 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
A
= Assembly Location
WL = Wafer Lot Code
= Year Code
Y
WW = Work Week Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON80534G
TDFNW8 8.3x8.4, 2.0P, SINGLE COOL
PAGE 1 OF 1
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