NVMJST2D6N08HTXG [ONSEMI]
Single N-Channel Power MOSFET 80V, 157A, 2.8 mΩ on Top Cool Package;
| 型号： | NVMJST2D6N08HTXG |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 80V, 157A, 2.8 mΩ on Top Cool Package |
| 文件： | 总7页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Power, Single
N-Channel
80 V, 2.8 mW, 131.5 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
80 V
2.8 mW @ 10 V
131.5 A
D (6,7,8,9,10,TOP)
NVMJST2D6N08H
Features
• Small Footprint (5x7 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G (1)
G
• TCPAK57 Top Cool Package (TCPAK10)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
S (2,3,4,5)
N−CHANNEL MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
131.5
93
A
C
D
q
JC
T
C
(Notes 1, 3)
Steady
State
TCPAK10 5.1x7.5
CASE 760AG
Power Dissipation
T
C
P
116
58
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
MARKING DIAGRAM
Continuous Drain
Current R
T = 25°C
A
I
D
28
q
JA
T = 100°C
A
20
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
5.3
2.6
900
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
97
A
Single Pulse Drain−to−Source Avalanche
E
AS
757
mJ
Energy (I
= 12.2 A)
L(pk)
XXXX = Specific Device Code
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
Lead Temperature for Soldering Purposes
T
260
°C
L
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Assembly Lot Code
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Symbol
Value
0.27
28.5
4.72
5.07
1.29
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Drain Lead
R
°C/W
q
JC
R
q
JA
Y
Y
JL
JL
JH
Junction−to−Source Lead
Junction−to−Heatsink Top (Note 2)
Y
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
October, 2022 − Rev. 0
NVMJST2D6N08H/D
NVMJST2D6N08H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
3.84
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 80 V
mA
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
2.0
4.0
2.8
V
mV/°C
mW
S
GS(TH)
DS
D
V
/T
J
−7.16
2.2
GS(TH)
R
V
GS
= 10 V
I = 50 A
D
DS(on)
g
FS
V
DS
=5 V, I = 50 A
164
D
C
4405
645
25
ISS
Output Capacitance
C
C
V
= 0 V, f = 1 MHz, V = 40 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
= 10 V, V = 64 V; I = 75 A
68
G(TOT)
GS
DS
D
Threshold Gate Charge
Q
11
G(TH)
nC
V
Gate−to−Source Charge
Gate−to−Drain Charge
Q
18
GS
GD
GP
V
GS
= 10 V, V = 64 V; I = 75 A
DS
D
Q
V
16
Plateau Voltage
4.6
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
20
26
42
9.0
d(ON)
Rise Time
t
r
V
= 10 V, V = 64 V,
DS
GS
D
ns
V
I
= 75 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.82
0.7
61
1.2
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
36
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
25
b
Reverse Recovery Charge
Q
84
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMJST2D6N08H
TYPICAL CHARACTERISTICS
300
250
200
150
100
50
350
V
= 10 V to 6.0 V
GS
V
= 5.5 V
5.0 V
GS
V
DS
= 5 V
300
250
200
150
100
50
T = 25°C
J
4.5 V
4.0 V
.
T = 125°C
J
T = −55°C
J
0
0
0
1
2
3
4
5
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
T = 25°C
D
J
T = 25°C
J
I
= 50 A
V
GS
= 10 V
4
5
6
7
8
9
10
10
30
50
70
90
110
130
150
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1000000
100000
10000
1000
100
3
V
= 10 V
= 50 A
GS
T = 175°C
T = 150°C
J
J
I
D
2.5
2
T = 125°C
J
1.5
1
T = 85°C
J
T = 25°C
J
10
0.5
0
1
0.1
−50 −25
0
25
50
75
100 125 150 175
10
20
30
40
50
60
70
80
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
3
NVMJST2D6N08H
TYPICAL CHARACTERISTICS
10
10000
1000
100
C
ISS
V
DS
= 64 V
9
8
7
6
5
4
3
2
1
0
I
D
= 75 A
T = 25°C
J
C
OSS
RSS
Q
Q
GD
GS
C
10
1
V
= 0 V
GS
T = 25°C
J
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
10
200
20
2
V
= 10 V
= 64 V
= 75 A
V
GS
= 0 V
GS
V
DS
I
D
T = 175°C
J
t
d(on)
t
d(off)
T = 150°C
J
t
r
T = 125°C
J
t
f
T = 25°C
J
T = −55°C
J
1
1
0.2
10
R , GATE RESISTANCE (W)
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
10 ms
100
10
T (initial) = 25°C
J
T
V
= 25°C
C
T (initial) = 150°C
J
≤ 10 V
GS
Single Pulse
0.5 ms
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
www.onsemi.com
4
NVMJST2D6N08H
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
0.1
20%
10%
5%
0.01
2%
1%
Single Pulse
0.00001
0.001
0.000001
0.0001
0.001
0.01
0.1
1
10
100
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMJST2D6N08HTXG
2D68H
TCPAK10 5.1x7.5
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVMJST2D6N08H
PACKAGE DIMENSIONS
TCPAK10 5.1x7.5, 1.0P
CASE 760AG
ISSUE D
www.onsemi.com
6
NVMJST2D6N08H
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
onsemi Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明