NVTFS007N08HLTAG [ONSEMI]
Single N-Channel Power MOSFET 80V, 71A, 7mΩ;
| 型号： | NVTFS007N08HLTAG |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 80V, 71A, 7mΩ |
| 文件： | 总9页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel
80 V, 7 mW, 71 A
NVTFS007N08HL
Features
• Small Footprint (3.3x3.3 mm) for Compact Design
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• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• NVTFWS007N08HL − Wettable Flank Option for Enhanced Optical
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
Inspection
80 V
7 mW @ 10 V
71 A
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
N−Channel
D (5 − 8)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
G (4)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
71
A
C
D
S (1, 2, 3)
q
JC
T
C
50
(Notes 1, 3)
Steady
State
D D D D
Power Dissipation
T
C
P
79
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
40
Continuous Drain
Current R
T = 25°C
A
I
D
14.4
10.2
3.3
1.6
347
q
JA
T = 100°C
A
(Notes 1, 2, 3)
Steady
State
G S S S
WDFN8
(3.3x3.3, 0.65 P)
CASE 511DY
Pin 1
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
WDFNW8
(3.3x3.3, 0.65 P)
CASE 515AP
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
MARKING DIAGRAMS
Source Current (Body Diode)
I
S
66
A
Single Pulse Drain−to−Source Avalanche
E
AS
1433
mJ
Energy (I = 3.9 A)
7W08
AYWWG
G
AS
7V08
AYWW
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
7x08 = Specific Device Code
A
Y
= Assembly Location
= Year
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
WW = Work Week
Parameter
Symbol
Value
1.9
Unit
G
= Pb−Free Package
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
(Note: Microdot may be in either location)
q
JC
R
46
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2021 − Rev. 1
NVTFS007N08HL/D
NVTFS007N08HL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
21.6
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
GS
DS
V
= 80 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 270 mA
1.0
1.5
4.8
5.8
8.7
3.0
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
mW
GS(TH)
R
V
= 10 V
I
I
= 16 A
= 10 A
7.0
DS(on)
GS
GS
D
V
= 4.5 V
10.88
mW
D
CHARGES AND CAPACITANCES
Input Capacitance
C
1810
227
14.1
15.9
32.5
3.0
pF
iss
V
= 0 V, f = 1.0 MHz,
DS
GS
Output Capacitance
C
oss
V
= 40 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
V
= 4.5 V, V = 40 V, I = 16 A
nC
nC
G(TOT)
Q
G(TOT)
GS
DS
D
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
5.2
V
= 10 V, V = 40 V, I = 16 A
DS D
GS
GD
GP
GS
Q
V
5.6
2.8
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
t
7.0
3.7
ns
d(on)
t
r
V
= 10 V, V = 40 V,
DS
GS
D
I
= 16 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
29.3
2.7
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.67
40
1.2
V
SD
J
V
= 0 V,
GS
S
I
= 16 A
T = 125°C
J
Reverse Recovery Time
t
ns
RR
V
GS
= 0 V, dl /dt = 100 A/ms,
S
I
S
= 16 A
Reverse Recovery Charge
Q
40.3
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS007N08HL
TYPICAL CHARACTERISTICS
90
75
60
45
30
15
0
V
= 4.5 V − 10 V
GS
3.4 V
75
50
3.0 V
2.6 V
25
0
T = 25°C
J
T = 125°C
J
T = −55°C
J
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9
10
9
T = 25°C
D
T = 25°C
J
J
I
= 16 A
8
8
V
= 4.5 V
= 10 V
GS
7
7
6
6
V
GS
5
4
5
4
3
4
5
6
7
8
9
10
20
40
60
I , DRAIN CURRENT (A)
80
100
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
100K
10K
1K
V
= 10 V
= 16 A
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
100
10
T = 25°C
J
0.7
0.5
−50 −25
1
0
25
50
75 100 125 150 175
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVTFS007N08HL
TYPICAL CHARACTERISTICS
10K
10
9
C
ISS
8
7
1K
100
10
6
5
4
3
C
OSS
C
RSS
Q
Q
GD
GS
V
DS
= 40 V
2
V
GS
= 0 V
I
= 16 A
D
T = 25°C
f = 1 MHz
J
1
0
T = 25°C
J
10
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
100
10
1
V
V
= 10 V
= 40 V
= 16 A
GS
V
= 0 V
GS
DS
t
d(off)
I
D
t
f
t
r
t
d(on)
10
1
T = 125°C
J
T = 25°C
T = −55°C
J
J
0.1
0.3
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
10
1
T
= 25°C
J(initial)
10 ms
T
= 100°C
J(initial)
V
≤ 10 V
GS
Single Pulse
= 25°C
T
C
1
0.5 ms
1 ms
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.0001
0.1
1
10
100
1000
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVTFS007N08HL
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVTFS007N08HLTAG
7V08
WDFN8
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVTFWS007N08HLTAG
7W08
WDFNW8
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVTFS007N08HL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DY
ISSUE A
0.20 C
2X
B
D
0.10
D2
C A B
8
A
e/2
L1
M
8
5
5
G
E3
E2
E
E1
0.10
C A B
L
K
2X
0.20 C
G1
PIN 1
AREA
1
4
4
1
b
(8X)
e
0.10
0.05
C A B
C
BOTTOM VIEW
TOP VIEW
SIDE VIEW
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
2. DIMENSIONS D1 & E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS NOR GATE BURRS.
D1
A
(4X)
c
Ө
0.10 C
A1
(8X)
MILLIMETERS
DIM
0.10 C
MIN NOM MAX
C
A
A1
b
0.70 0.75 0.80
0.00 0.05
0.23 0.33 0.43
0.15 0.20 0.25
3.20 3.30 3.40
2.95 3.13 3.30
SEATING PLANE
−
END VIEW
c
3.46
2.38
D
D1
D2
E
E1
E2
E3
e
1.98
2.20 2.40
8
5
3.20 3.30 3.40
2.80 3.00 3.15
1.40 1.60 1.80
0.15 0.25 0.40
0.65 BSC
0.78 (4X)
0.75
2.51
4.10
G
G1
K
L
L1
M
0.30 0.43 0.55
0.25 0.35 0.45
0.55 0.75 0.95
0.35 0.52 0.65
0.06 0.15 0.30
0.57
1.00
1.35
0
1.50 1.60
12
0.60 (3X)
0.65
−
Ө
1
4
0.43 (8X)
RECOMMENDED LAND PATTERN
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6
NVTFS007N08HL
PACKAGE DIMENSIONS
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL Fused WF)
CASE 515AP
ISSUE O
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7
NVTFS007N08HL
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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