NVTYS040N10MCLTWG [ONSEMI]
MOSFET – Power, Single, N-Channel,;型号: | NVTYS040N10MCLTWG |
厂家: | ONSEMI |
描述: | MOSFET – Power, Single, N-Channel, |
文件: | 总7页 (文件大小:366K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single,
N-Channel
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
100 V
40.9 mW @ 10 V
63.2 mW @ 4.5 V
20 A
100 V, 40.9 mW, 20 A
NVTYS040N10MCL
N−Channel
D (5 − 8)
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
DS(on)
G (4)
S (1, 2, 3)
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
LFPAK8
3.3x3.3
CASE 760AD
Continuous Drain
Current R
Steady
State
T
T
T
T
= 25°C
= 100°C
= 25°C
= 100°C
I
20
A
C
C
C
C
D
q
JC
14
(Notes 1, 2, 3)
Power Dissipation
P
37
W
A
D
D
R
(Notes 1, 2)
q
JC
18
MARKING DIAGRAM
Continuous Drain
Current R
Steady T = 25°C
State
I
D
6
A
040N
10MCL
AWLYW
q
JA
T = 100°C
A
4
(Notes 1, 2, 3)
Power Dissipation
T = 25°C
A
P
3.1
1.5
80
W
W
A
R
(Notes 1, 2)
q
JA
T = 100°C
A
040N10MCL = Specific Device Code
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
Pulsed Drain Current
T
C
= 25°C, t = 10 ms
I
DM
p
Source Current (Body Diode)
I
28
A
S
W
= Work Week
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Single Pulse Drain−to−Source Avalanche
E
1310
260
mJ
AS
Energy (I
= 0.9 A)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
4.1
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
48
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
May, 2023 − Rev. 1
NVTYS040N10MCL/D
NVTYS040N10MCL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
−
−
−
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
−
66.6
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
1.0
250
100
mA
DSS
GS
DS
J
= 100 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
= V , I = 27 mA
1.0
−
1.6
3.0
−
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
−6.4
28.1
37.4
18.5
mV/°C
mW
GS(TH)
R
V
GS
V
GS
V
DS
= 10 V
= 4.5 V
I
I
= 5 A
= 5 A
−
40.9
63.2
−
DS(on)
D
−
D
Forward Transconductance
g
=5 V, I = 5 A
−
S
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 50 V
−
−
−
−
−
−
−
−
−
−
564
218
4
−
−
−
−
−
−
−
−
−
−
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Gate Resistance
R
f = 1 MHz
0.6
4.1
8.6
0.5
1.6
1.2
2.8
W
G
Total Gate Charge
Q
Q
V
GS
V
GS
V
GS
= 4.5 V, V = 80 V; I = 5 A
nC
G(TOT)
G(TOT)
DS
D
Total Gate Charge
= 10 V, V = 80 V; I = 5 A
DS D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
= 10 V, V = 80 V; I = 5 A
nC
G(TH)
DS
D
Q
GS
GD
GP
Q
V
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
t
V
= 10 V, V = 80 V, I = 5 A,
−
−
−
−
6.9
2.3
−
−
−
−
ns
d(ON)
GS
G
DS
D
R
= 6 W
t
r
Turn−Off Delay Time
Fall Time
t
15.7
3.8
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V, I = 5 A
T = 25°C
−
−
−
−
−
−
0.85
0.73
25.5
12.5
12.6
14
1.2
−
V
SD
GS
S
J
T = 125°C
J
Reverse Recovery Time
Charge Time
t
I = 5 A, di/dt = 100 A/ms
F
−
ns
ns
ns
nC
RR
t
t
−
a
Discharge Time
−
b
Reverse Recovery Charge
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVTYS040N10MCL
TYPICAL CHARACTERISTICS
25
20
15
10
5
25
VGS = 4 V
VGS = 4.5 V − 10 V
VDS = 5 V
VGS = 3.6 V
20
15
10
VGS = 3.2 V
VGS = 2.8 V
TJ = 25°C
TJ = −55°C
5
0
VGS = 2.6 V
VGS = 2.4 V
TJ = 125°C
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
120
110
100
90
60
50
40
30
20
10
TJ = 25°C
ID = 5 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
80
70
60
50
40
30
20
2
3
4
5
6
7
8
9
10
5
10
15
20
25
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.1
0.0001
VGS = 10 V
TJ = 175°C
TJ = 150°C
TJ = 125°C
ID = 5 A
1.9
1.7
1.5
1.3
1.1
0.9
0.7
1E−05
1E−06
1E−07
1E−08
1E−09
TJ = 85°C
TJ = 25°C
−50 −25
0
25
50
75 100 125 150 175
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Temperature
Figure 6. Drain−to−Source Leakage Current vs. Voltage
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3
NVTYS040N10MCL
TYPICAL CHARACTERISTICS
10
10000
1000
100
10
VDS = 80 V
ID = 5 A
TJ = 25°C
8
6
4
2
0
C
ISS
C
OSS
Q
Q
GD
GS
C
RSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
1
0
0
2
4
6
8
10
0
10 20 30 40 50 60 70 80 90 100
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
100
10
1
td(off)
td(on)
VGS = 10 V
VDS = 80 V
ID = 5 A
VGS = 0 V
TJ = 125°C
TJ = 150°C
10
TJ = 175°C
tf
TJ = 25°C
TJ = −55°C
tr
0.1
1
0.3
1
10
100
0.5
V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7
0.9
1.1
1.3
1.5
R , GATE RESISTANCE (W)
G
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Resistive Switching Time Variation vs.
Gate Resistance
1000
100
10
100
VGS ≤ 10 V
SINGLE PULSE
Tc = 25°C
10
Tj (initial) = 25°C
Tj (initial) = 150°C
1
1
RDS(on) LIMIT
10 ms
THERMAL LIMIT
PACKAGE LIMIT
0.5 ms
1 ms
10 ms
0.1
0
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased Safe
Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVTYS040N10MCL
TYPICAL CHARACTERISTICS
100
10
1
@ 50% Duty Cycle
@ 20% Duty Cycle
@ 10% Duty Cycle
@ 5% Duty Cycle
@ 2% Duty Cycle
@ 1% Duty Cycle
Single Pulse
0.1
0.01
0.000001 0.00001 0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Time (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVTYS040N10MCLTWG
040N
10MCL
LFPAK8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
DATE 16 NOV 2020
GENERIC
MARKING DIAGRAM*
XXXXX
XXXXX
AWLYW
XXXX = Specific Device Code
A
= Assembly Location
WL = Wafer Lot
Y
= Year
W
= Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON05544H
LFPAK8 3.3x3.3, 0.65P
PAGE 1 OF 1
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