NXH003P120M3F2PTHG [ONSEMI]
Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package;
| 型号： | NXH003P120M3F2PTHG |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package |
| 文件： | 总13页 (文件大小：4508K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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PACKAGE PICTURE
Silicon Carbide (SiC)
Module – EliteSiC, 3 mohm
SiC M3 MOSFET, 1200 V,
2-PACK Half Bridge
Topology, F2 Package with
HPS DBC
PIM36 56.7x42.5 (PRESS FIT)
CASE 180BY
Advance Information
NXH003P120M3F2PTHG
MARKING DIAGRAM
The NXH003P120M3F2PTHG is a power module containing 3 mW /
1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in
an F2 package.
NXH003P120M3F2PTHG
ATYYWW
Features
NXH003P120M3F2PTHG = Specific Device Code
• 3 mW / 1200 V M3S SiC MOSFET Half−Bridge
AT
= Assembly & Test Site
Code
• HPS DBC
• Thermistor
YWW
= Year and Work Week
Code
• Options with Pre−Applied Thermal Interface Material (TIM) and
without Pre−Applied TIM
PIN CONNECTIONS
• Options with Solderable Pins and Press−Fit Pins
• These Devices are Pb−Free, Halide Free and are RoHS Compliant
Typical Applications
• Solar Inverter
• Uninterruptible Power Supplies
• Electric Vehicle Charging Stations
• Industrial Power
See Pin Function Description for pin names
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Figure 1. NXH003P120MNF2 Schematic Diagram
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2023
1
Publication Order Number:
NXH003P120M3F2PTHG/D
June, 2023 − Rev. P2
NXH003P120M3F2PTHG
PIN FUNCTION DESCRIPTION
Pin
1
Name
S1
Description
Q1 Kelvin Emitter (High side switch)
2
G1
Q1 Gate (High side switch)
Q1 Gate (High side switch)
Q1 Kelvin Emitter (High side switch)
DC Positive Bus connection
DC Positive Bus connection
DC Positive Bus connection
DC Positive Bus connection
DC Positive Bus connection
DC Positive Bus connection
DC Positive Bus connection
DC Positive Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
Center point of half bridge
Center point of half bridge
Center point of half bridge
Center point of half bridge
Center point of half bridge
Q2 Kelvin Emitter (Low side switch)
Q2 Gate (Low side switch)
Thermistor Connection 1
3
G1
4
S1
5
DC+
6
DC+
7
DC+
8
DC+
9
DC+
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
DC+
DC+
DC+
DC*
DC−
DC−
DC−
DC−
DC−
DC−
DC−
PHASE
PHASE
PHASE
PHASE
PHASE
S2
G2
TH1
TH2
Thermistor Connection 2
S2
Q2 Kelvin Emitter (Low side switch)
Q2 Gate (Low side switch)
Center point of half bridge
Center point of half bridge
Center point of half bridge
Center point of half bridge
Center point of half bridge
G2
PHASE
PHASE
PHASE
PHASE
PHASE
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2
NXH003P120M3F2PTHG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
SiC MOSFET
Drain−Source Voltage
Gate−Source Voltage
V
1200
+22/−10
350
V
V
DSS
V
GS
Continuous Drain Current @ T = 80°C (T = 175°C)
I
D
A
c
J
Pulsed Drain Current (T = 175°C)
I
700
A
J
Dpulse
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
tot
979
W
°C
°C
c
J
Minimum Operating Junction Temperature
T
JMIN
−40
Maximum Operating Junction Temperature
THERMAL PROPERTIES
Storage Temperature Range
TIM Layer Thickness
T
JMAX
175
T
stg
−40 to 150
°C
T
TIM
160 20
mm
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 s, 60 Hz
Creepage Distance
V
is
4800
12.7
V
RMS
mm
CTI
600
Substrate Ceramic Material
Substrate Ceramic Material Thickness
Substrate Warpage (Note 2)
HPS
0.38
mm
mm
W
Max 0.18
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
2. Height difference between horizontal plane and substrate copper bottom.
RECOMMENDED OPERATING RANGES
Rating
Module Operating Junction Temperature
Symbol
Min
Max
Unit
T
J
−40
150
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SiC MOSFET CHARACTERISTICS
Zero Gate Voltage Drain Current
Drain−Source On Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
DS
= 0 V, V = 1200 V
I
DSS
–
–
−
3.19
5.25
5.88
2.4
300
5
mA
DS
= 18 V, I = 200 A, T = 25°C
R
V
mW
D
J
DS(ON)
= 18 V, I = 200 A, T = 125°C
−
−
D
J
= 18 V, I = 200 A, T = 150°C
–
–
D
J
Gate−Source Threshold Voltage
Gate Leakage Current
= V , I = 160 mA
1.8
–800
–
4.4
800
–
V
DS
D
GS(TH)
= −10 V / 20 V, V = 0 V
I
−
nA
pF
DS
GSS
Input Capacitance
= 800 V, V = 0 V, f = 100 kHz
C
20889
90
GS
ISS
RSS
OSS
Reverse Transfer Capacitance
Output Capacitance
C
C
–
–
–
1225
–
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3
NXH003P120M3F2PTHG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
SiC MOSFET CHARACTERISTICS
Total Gate Charge
Test Conditions
Symbol
Min
Typ
Max
Unit
V
= 800 V, V = −5/20 V, I = 200 A
Q
G(TOTAL)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1195
232
210
49
–
–
nC
nC
nC
ns
DS
GS
D
Gate−Source Charge
Gate−Drain Charge
Q
GS
Q
GD
–
Turn−on Delay Time
Rise Time
T = 25°C
t
–
J
d(on)
V
V
= 600 V, I = 200 A
D
DS
GS
t
r
17
–
= −5 V / 18 V, R = 1 W
G
Turn−off Delay Time
t
144
16
–
d(off)
Fall Time
t
f
–
Turn−on Switching Loss per Pulse
Turn−off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
E
1.79
1.13
48
–
mJ
ns
ON
OFF
d(on)
E
–
T = 150°C
t
–
J
V
V
= 600 V, I = 200 A
D
DS
GS
t
r
15
–
= −5 V / 18 V, R = 1 W
G
Turn−off Delay Time
t
154
15
–
d(off)
Fall Time
t
f
–
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Diode Forward Voltage
E
ON
1.94
1.12
4.8
–
mJ
V
E
OFF
–
I
D
I
D
I
D
= 200 A, T = 25°C
V
SD
7.5
–
J
= 200 A, T = 125°C
4.5
J
= 200 A, T = 150°C
4.4
–
J
Thermal Resistance − Chip−to−Case
Thermal Resistance − Chip−to−Heatsink
M1, M2
R
R
0.097
0.202
–
°C/W
°C/W
thJC
thJH
Thermal grease, Thickness = 2 Mil +2%,
A = 2.8 W/mK
–
THERMISTOR CHARACTERISTICS
Nominal Resistance
T
T
T
T
= 25°C
R
–
–
5
–
–
–
5
–
–
–
–
–
kW
W
NTC
NTC
NTC
NTC
25
= 100°C
= 150°C
= 100°C
R
R
493
159.5
–
100
150
–
W
Deviation of R
DR/R
−5
–
%
100
Power Dissipation – Recommended Limit 0.15 mA, Non−self−heating Effect
P
0.1
mW
mW
mW/K
K
D
D
Power Dissipation − Absolute Maximum
Power Dissipation Constant
B−value
5 mA
P
–
34.2
1.4
–
B (25/50), Tolerance 2%
B (25/100), Tolerance 2%
–
3375
3436
B−value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH003P120M3F2PTHG
NXH003P120M3F2PTHG
F2HALFBR: Case 180BY
Press−fit Pins with pre−applied
thermal interface material (TIM)
(Pb-Free / Halide Free)
20 Units / Blister Tray
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4
NXH003P120M3F2PTHG
TYPICAL CHARACTERISTIC
(M1/M2 SiC MOSFET CHARACTERISTIC)
Figure 2. MOSFET Typical Output Characteristic
Figure 3. MOSFET Typical Output Characteristic
Figure 4. MOSFET Typical Transfer Characteristic
Figure 5. Body Diode Forward Characteristic
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5
NXH003P120M3F2PTHG
TYPICAL CHARACTERISTIC
(M1/M2 SiC MOSFET CHARACTERISTIC)
Figure 6. Gate−to−Source Voltage vs. Total Charge
Figure 7. Capacitance vs. Drain−to−Source Voltage
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6
NXH003P120M3F2PTHG
TYPICAL CHARACTERISTIC
(M1/M1 SiC MOSFET SWITCHING CHARACTERISTIC)
Figure 8. Typical Switching Loss Eon vs. ID
Figure 9. Typical Switching Loss Eon vs. Rg
Figure 11. Typical Switching Loss Eoff vs. Rg
Figure 13. Typical Switching Loss Tdon vs. Rg
Figure 10. Typical Switching Loss Eoff vs. ID
Figure 12. Typical Switching Loss Tdon vs. ID
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7
NXH003P120M3F2PTHG
TYPICAL CHARACTERISTIC
(M1/M1 SiC MOSFET SWITCHING CHARACTERISTIC)
Figure 14. Typical Switching Loss Tdoff vs. ID
Figure 15. Typical Switching Loss Tdoff vs. Rg
Figure 17. Typical Switching Loss Tr vs. Rg
Figure 19. Typical Switching Loss Tf vs. Rg
Figure 16. Typical Switching Loss Tr vs. ID
Figure 18. Typical Switching Loss Tf vs. ID
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8
NXH003P120M3F2PTHG
TYPICAL CHARACTERISTIC
(M1/M1 SiC MOSFET SWITCHING CHARACTERISTIC)
Figure 20. di/dt ON vs. ID
Figure 21. di/dt ON vs. RG
Figure 23. di/dt OFF vs. RG
Figure 25. dv/dt ON vs. RG
Figure 22. di/dt OFF vs. ID
Figure 24. dv/dt ON vs. ID
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9
NXH003P120M3F2PTHG
TYPICAL CHARACTERISTIC
(M1/M1 SiC MOSFET SWITCHING CHARACTERISTIC)
Figure 26. dv/dt OFF vs. ID
Figure 27. dv/dt OFF vs. RG
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10
NXH003P120M3F2PTHG
TYPICAL CHARACTERISTIC
(M1/M1 SiC MOSFET CHARACTERISTIC)
Figure 28. MOSFET Junction−to−Case Transient Thermal Impedance
Table 1. FOSTER NETWORKS – M1, M2
M1
M2
Rth (K/W)
Cth (Ws/K)
0.006269327
0.044417021
0.080568359
0.473570059
0.438172158
Rth (K/W)
0.002085717
0.002262963
0.011217723
0.013624461
0.07157749
Cth (Ws/K)
0.005919216
0.041549892
0.075947544
0.468022154
0.444577769
Foster Element #
1
2
3
4
5
0.002119710
0.002237509
0.010754082
0.012973790
0.071830979
Table 2. CAUER NETWORKS – M1, M2
M1
M2
Rth (K/W)
Cth (Ws/K)
0.005029516
0.025033712
0.043255417
0.201827107
0.484541759
Rth (K/W)
0.003176874
0.005878559
0.015761478
0.04214085
0.033810593
Cth (Ws/K)
0.004749202
0.023599253
0.041433746
0.20355778
0.506186577
Cauer Element #
1
2
3
4
5
0.003228661
0.005914795
0.015486364
0.041123543
0.034162706
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11
NXH003P120M3F2PTHG
PACKAGE DIMENSIONS
PIM36 56.7x42.5 (PRESS FIT)
CASE 180BY
ISSUE C
NOTES:
D
1. CONTROLLING DIMENSION: MILLIMETERS
2. PIN POSITION TOLERANCE IS 0.4mm
PACKAGE MARKING
LOCATION
E
E1
E2
E3
E4
SIDE VIEW
ØP
D1
D2
TOP VIEW
b
25.5
24.0
20.8
17.6
25.5
24.0
20.8
A1
A3
A
14.4
11.2
8.0
11.2
END VIEW
4.8
4.8
1.6
Ø0.94~1.09
PLATED
Ø2.8
THRU HOLE
Ø9.0
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12
NXH003P120M3F2PTHG
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