NXH80B120L2Q0SNG [ONSEMI]
功率集成模块，双升压，1200 V，40 A，IGBT + 1200 V，30 A 硅二极管;
| 型号： | NXH80B120L2Q0SNG |
| 厂家： | 
ONSEMI |
| 描述： | 功率集成模块，双升压，1200 V，40 A，IGBT + 1200 V，30 A 硅二极管 双极性晶体管 二极管 |
| 文件： | 总11页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NXH80B120L2Q0
Q0 - Dual Boost Power
Module
The NXH80B120L2Q0 is a high−density, integrated power module
combines high−performance IGBTs with rugged anti−parallel diodes
including on−board thermistor.
www.onsemi.com
Features
• Dual Boost 40 A / 1200 V IGBT and Si FRD Module
• 1200 V FSII IGBT V
= 2.2 V
CE(SAT)
• 1200 V Stealth Fast Recovery Diode V = 2.4 V
F
• Low Inductive Layout
• Solderable Pins
• Thermistor
• Bare Copper and Nickel−Plated DBC Options
Typical Applications
Q0BOOST
CASE 180AJ
• Solar Inverter
• Uninterruptible Power Supplies
• Energy Storage Systems
MARKING DIAGRAM
5,6,15,16
D6
D5
Bypass Diode
Bypass Diode
NXH80B120L2Q0Sxx
ATYYWW
7, 8
13,14
11,12
D3
D4
Boost Diode
Boost Diode
NXH80B120L2Q0Sxx = Specific Device Code
AT = Assembly & Test Side Code
YYWW = Year and Work Week Code
9,10
PIN CONNECTIONS
D1
D2
IGBT
T2
T1
IGBT
Boost IGBT 2
Boost IGBT 1
Protection Protection
Diode Diode
20
1
19
22
2
21
3,4
17,18
NTC
Thermistor
Figure 1. NXH80B120L2Q0SNG Schematic Diagram
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
June, 2019 − Rev. 0
NXH80B120L2Q0/D
NXH80B120L2Q0
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25°C unless otherwise noted
J
Rating
Symbol
Value
Unit
BOOST IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
V
1200
20
V
V
CES
V
GE
Continuous Collector Current @ T = 80°C (T = 175°C)
I
C
41
A
h
J
Pulsed Collector Current (T = 175°C)
I
123
103
5
A
J
Cpulse
Maximum Power Dissipation (T = 175°C)
P
tot
W
ms
°C
°C
J
Short Circuit Withstand Time @ V = 15 V, V = 600 V, T ≤ 150°C
T
sc
GE
CE
J
Minimum Operating Junction Temperature
T
−40
150
JMIN
Maximum Operating Junction Temperature
BOOST DIODE
T
JMAX
Peak Repetitive Reverse Voltage
V
1200
25
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
h
J
Maximum Power Dissipation (T = 175°C)
P
60
W
A
J
tot
Surge Forward Current (60 Hz single half−sine wave)
I
150
93
FSM
2
2
2
I t − value (60 Hz single half−sine wave)
I t
A s
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
BYPASS DIODE / IGBT PROTECTION DIODE
Peak Repetitive Reverse Voltage
T
−40
150
°C
°C
JMIN
T
JMAX
V
1600
46
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 150°C)
I
F
c
J
Repetitive Peak Forward Current (T = 175°C, t limited by T
)
I
FRM
130
66
A
J
p
Jmax
Power Dissipation Per Diode (T = 175°C)
P
tot
W
°C
°C
J
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMIN
−40
150
T
JMAX
Storage Temperature range
T
stg
−40 to 125
°C
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60 Hz
Creepage distance
V
is
3000
12.7
V
RMS
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
−25)
jmax
Unit
Module Operating Junction Temperature
T
−40
(T
°C
J
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2
NXH80B120L2Q0
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
BOOST IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
= 0 V, V = 1200 V
I
CES
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
200
2.5
–
mA
GE
CE
V
= 15 V, I = 40 A, T = 25°C
V
V
2.20
2.16
5.45
−
V
GE
C
J
CE(sat)
V
= 15 V, I = 40 A, T = 150°C
C J
GE
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
V
= V , I = 1.5 mA
6.4
200
–
V
GE
CE
C
GE(TH)
V
= 20 V, V = 0 V
I
GES
nA
ns
GE
CE
T = 25°C
t
27
J
d(on)
V
V
= 700 V, I = 40 A
CE
GE
C
Rise Time
t
20
–
r
= 15 V, R = 4 W
G
Turn−off Delay Time
t
95
–
d(off)
Fall Time
t
75
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
on
E
off
1020
1810
27
–
mJ
–
T = 125°C
t
–
ns
J
d(on)
V
V
= 700 V, I = 40 A
CE
GE
C
Rise Time
t
20
–
r
=
15 V, R = 4 W
G
Turn−off Delay Time
t
110
180
1630
3550
9700
200
170
400
0.92
–
d(off)
Fall Time
t
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
on
E
off
–
mJ
–
V
= 25 V, V = 0 V, f = 10 kHz
C
–
pF
CE
GE
ies
oes
Output Capacitance
C
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
res
V
= 600 V, I = 40 A, V = 15 V
Q
g
–
nC
CE
C
GE
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100mm,
l = 0.84 W/mK
R
–
°C/W
thJH
BOOST DIODE CHARACTERISTICS
Diode Reverse Leakage Current
Diode Forward Voltage
V
= 1200 V
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
−
100
3.15
–
mA
R
R
I
= 30 A, T = 25°C
V
2.4
V
F
J
F
I
= 30 A, T = 150°C
1.9
F
J
Reverse Recovery Time
T = 25 °C
= 700 V, I = 40 A
=
t
195
2420
53
–
ns
nC
A
J
rr
V
CE
V
GE
C
Reverse Recovery Charge
Q
–
rr
15 V, R = 4 W
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
RRM
di/dt
2390
1360
370
5580
75
–
A/ms
mJ
E
–
rr
Reverse Recovery Time
T = 125°C
= 700 V, I = 40 A
=
t
–
ns
J
rr
V
CE
V
GE
C
Reverse Recovery Charge
Q
rr
RRM
–
nC
A
15 V, R = 4 W
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
di/dt
2025
3160
1.59
–
A/ms
mJ
E
–
rr
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100 mm,
l = 0.84 W/mK
R
–
°C/W
thJH
BYPASS DIODE/IGBT PROTECTION DIODE CHARACTERISTICS
Diode Reverse Leakage Current
V
= 1600 V, T = 25°C
I
R
–
−
100
mA
R
J
www.onsemi.com
3
NXH80B120L2Q0
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
V
BYPASS DIODE/IGBT PROTECTION DIODE CHARACTERISTICS
Diode Forward Voltage
I
= 25 A, T = 25°C
V
F
–
−
–
1.0
1.4
−
F
J
I
= 25 A, T = 150°C
0.90
1.44
F
J
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100 mm,
l = 0.84 W/mK
R
–
°C/W
thJH
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
R
−
−
22
1486
−
−
−
5
−
−
−
−
kW
W
25
T = 100°C
R
100
DR/R
−5
−
%
Power dissipation
Power dissipation constant
B−value
P
200
2
mW
mW/K
K
D
−
B(25/50), tolerance 3%
B(25/100), tolerance 3%
−
3950
3998
B−value
−
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH80B120L2Q0SG
NXH80B120L2Q0SG
Q0BOOST − Case 180AJ
Bare Copper DBC, Solder Pins
(Pb−Free and Halide−Free)
24 Units / Blister Tray
NXH80B120L2Q0SNG
NXH80B120L2Q0SNG
Q0BOOST − Case 180AJ
Nickel−Plated DBC, Solder Pins
(Pb−Free and Halide−Free)
24 Units / Blister Tray
www.onsemi.com
4
NXH80B120L2Q0
TYPICAL CHARACTERISTICS − Boost IGBT & Boost Diode
150
120
90
150
17 V to 12 V
T = 25°C
17 V to 12 V
11 V
11 V
J
120 T = 150°C
J
10 V
9 V
10 V
9 V
90
60
60
8 V
7 V
30
0
30
0
8 V
7 V
0
0
0
2
4
6
8
10
12
80
0
0
0
1
2
3
4
5
6
7
8
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 1. IGBT Typical Output Characteristics
Figure 2. IGBT Typical Output Characteristics
100
80
150
120
90
60
60
40
T = 150°C
J
T = 150°C
J
30
0
20
0
T = 25°C
J
T = 25°C
J
2
4
6
8
10
1
2
3
4
V
GE
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 3. IGBT Typical Transfer
Characteristics
Figure 4. Diode Forward Characteristic
3015
2515
2015
1515
1015
7015
6015
5015
4015
3015
2015
V
V
R
= 15 V
V
V
R
=
15 V
GE
GE
125°C
= 700 V
= 700 V
= 4 W
CE
CE
125°C
= 4 W
G
G
25°C
25°C
515
15
1015
15
10
20
30
40
50
60
70
10
20
30
40
50
60
70
80
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. Typical Turn On Loss vs. IC
Figure 6. Typical Turn Off Loss vs. IC
www.onsemi.com
5
NXH80B120L2Q0
TYPICAL CHARACTERISTICS − Boost IGBT & Boost Diode
240
210
180
150
120
90
40
35
t @ 125°C
f
30
25
20
15
10
t @ 125°C
r
T
@ 125°C
@ 25°C
d(on)
t @ 25°C
r
T
@ 125°C
d(off)
T
d(on)
T
@ 25°C
d(off)
60
V
V
R
=
15 V
V
V
R
= 15 V
GE
GE
= 700 V
= 700 V
30
0
CE
5
0
CE
t @ 25°C
f
= 4 W
= 4 W
G
G
0
0
0
10
20
30
40
50
60
70
80
80
80
0
0
0
10
20
30
40
50
60
70
80
80
80
I , COLLECTOR CURRENT (A)
I , COLLECTOR CURRENT (A)
C
C
Figure 7. Typical Switching Times vs. IC
Figure 8. Typical Switching Times vs. IC
515
465
415
365
315
265
215
165
115
9060
8060
7060
6060
5060
4060
3060
2060
V
V
R
= 15 V
= 700 V
125°C
GE
125°C
CE
= 4 W
G
25°C
25°C
V
V
= 15 V
= 700 V
= 4 W
GE
CE
1060
60
65
15
R
G
10
20
30
40
50
60
70
10
20
30
40
50
60
70
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 9. Typical Reverse Recovery Time vs.
IC
Figure 10. Typical Reverse Recovery Charge
vs. IC
96
86
76
66
56
46
36
26
3000
2500
2000
1500
1000
125°C
25°C
25°C
125°C
V
V
R
= 15 V
= 700 V
= 4 W
V
V
= 15 V
= 700 V
GE
GE
500
0
CE
CE
16
6
R
= 4 W
G
G
10
20
30
40
50
60
70
10
20
30
40
50
60
70
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Typical Reverse Recovery Peak
Current vs. IC
Figure 12. Typical Diode Current Slope vs. IC
www.onsemi.com
6
NXH80B120L2Q0
TYPICAL CHARACTERISTICS − Boost IGBT & Boost Diode
5000
4500
4000
3500
3000
2500
2000
1500
1000
16
V
V
R
= 15 V
= 700 V
= 4 W
GE
V
= 600 V
= 40 A
125°C
25°C
60
CE
14
12
10
8
CE
I
C
G
6
4
2
0
500
0
0
10
20
30
40
50
70
80
0
100
200
300
400
500
I , COLLECTOR CURRENT (A)
C
Q , GATE CHARGE (nC)
G
Figure 13. Typical Reverse Recovery Energy
vs. IC
Figure 14. Gate Voltage vs. Gate Charge
10
1
DUT = 50%
30%
0.1
10%
5%
2%
1%
0.01
0.001
Single Pulse
0.0001
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
ON−PULSE WIDTH (s)
Figure 15. IGBT Transient Thermal Impedance
10
DUT = 50%
30%
1
0.1
10%
5%
2%
1%
0.01
0.001
Single Pulse
1.0E−06 1.0E−05
0.0001
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
ON−PULSE WIDTH (s)
Figure 16. Diode Transient Thermal Impedance
www.onsemi.com
7
NXH80B120L2Q0
TYPICAL CHARACTERISTICS − IGBT Protection Diode and Bypass Diode
100
150°C
25°C
80
60
40
20
0
0
0.3
0.6
0.9
1.2
1.5
V , FORWARD VOLTAGE (V)
F
Figure 17. Diode Forward Characteristic
10
1
DUT = 50%
30%
10%
5%
0.1
2%
0.01 1%
0.001
Single Pulse
0.0001
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
ON−PULSE WIDTH (s)
Figure 18. Diode Transient Thermal Impedance
TYPICAL CHARACTERISTICS − Thermistor
Figure 19. Thermistor Characteristic
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM22, 55x32.5 / Q0BOOST
CASE 180AJ
ISSUE B
DATE 08 NOV 2017
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON63481G
PIM22 55X32.5 / Q0BOOST (SOLDER PIN)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
PIM22, 55x32.5 / Q0BOOST
CASE 180AJ
ISSUE B
DATE 08 NOV 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON63481G
PIM22 55X32.5 / Q0BOOST (SOLDER PIN)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
NXH80B120MNQ0SNG
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode
ONSEMI
NXH80T120L3Q0P3G
Power Integrated Module (PIM), T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT
ONSEMI
NXH80T120L3Q0S3G
Power Integrated Module (PIM), T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT
ONSEMI
NXH80T120L3Q0S3TG
Power Integrated Module (PIM), T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT
ONSEMI
©2020 ICPDF网 联系我们和版权申明