PCFFS4065AF [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 650 V, D1, Die;
| 型号： | PCFFS4065AF |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 650 V, D1, Die |
| 文件： | 总7页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
40 A, 650 V, D1, Die
Anode
PCFFS4065AF
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature dependent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operation frequency, increased power density, reduced EMI, and
reduced system size and cost.
DIE LAYOUT
(Dimension: mm, Except Scribe Lane)
Features
• Max Junction Temperature 175°C
• Avalanche Rated 182 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
Applications
Passivation Information
• Passivation Material: Polymide (PSPI)
• Passivation Type: Local Passivation
• Passivation Thickness: 90KA
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
Die Information
CROSS SECTION
• Wafer Diameter: 6 inch
• Die Size: 3,030 × 3,030 mm (include Scribe Lane)
• Metallization:
♦ Top Ti/TiN/AlCu 4 mm
♦ Back Ti/NiV/Ag
• Die Thickness: Typ. 200 mm
• Bonding Pad Size
♦ Anode 2,670 × 2,670 mm
• Recommended Wire Bond (Note 1)
♦ Anode: 20 mil × 2
NOTE:
1. Based on TO−247 package of onsemi.
ORDERING INFORMATION
Part Number
Die Size
Package
3,030 x 3,030 mm
(Include Scribe Lane)
N/A
PCFFS4065AF
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2023 − Rev. 2
PCFFS4065AF/D
PCFFS4065AF
ELECTRICAL CHARACTERISTICS ON WAFER (T = 25°C unless otherwise noted) (Note 2)
C
Symbol
Parameter
Reverse Blocking Voltage
Forward Voltage
Test Condition
I = 200 mA, T = 25°C
R
Min
650
1.20
−
Typ
−
Max
−
Unit
V
V
R
C
V
F
I = 40 A, T = 25°C
−
1.75
200
V
F
C
I
R
Reverse Current
V
R
= 650 V, T = 25°C
−
mA
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Tested 100% on wafer.
The Configuration of Chips (Based on 6, Wafer)
Chip
Chip
Scribe Lane
Chip
80 mm
PSPI Passivation Line
Chip
Figure 1. Saw-on-film Frame Packing Based on Tested Wafer
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2
PCFFS4065AF
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
FFSH4065A
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
650
182
E
AS
Single Pulse Avalanche Energy (Note 3)
Continuous Rectified Forward Current @ T < 145°C
mJ
A
I
F
40
C
Continuous Rectified Forward Current @ T < 135°C
48
C
I
Non-Repetitive Peak Forward Surge Current
1300
1200
180
A
A
T
T
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
C
C
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
A
F,SM
p
I
Half-Sine Pulse, t = 8.3 ms
85
A
F,RM
p
Ptot
T
= 25°C
349
W
W
°C
C
C
T
= 150°C
58
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
3. E of 182 mJ is based on starting T = 25°C, L = 0.5 mH, I = 27 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
0.43
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Forward Voltage
Test Condition
I = 40 A, T = 25°C
Min
−
Typ
1.50
1.60
1.72
−
Max
1.75
2.0
2.4
200
400
600
−
Unit
V
F
V
F
C
I = 40 A, T = 125°C
−
F
C
I = 40 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 650 V, T = 25°C
−
mA
C
= 650 V, T = 125°C
−
−
C
= 650 V, T = 175°C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
−
119
1989
218
164
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
PCFFS4065AF
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
10−5
10−6
160
120
80
40
0
T
J = −55oC
TJ = 25 o
C
TJ = 75 o
C
T
J = 175 oC
TJ = 175 o
C
TJ = 125 o
C
TJ = −55oC
J = 25 o
TJ = 75 o
10−7
10−8
10−9
T
C
C
TJ = 125 oC
200
0
1
2
3
4
5
6
100
300
400
500
600 650
VR
, REVERSE VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 2. Forward Characteristics
Figure 3. Reverse Characteristics
400
300
200
100
0
400
300
200
100
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
TC, CASE TEMPERATURE (oC)
Figure 4. Current Derating
Figure 5. Power Derating
180
150
120
90
10000
1000
100
60
30
0
10
600 650
0
200
400
0.1
1
10
100
650
, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
VR
Figure 6. Capacitive Charge vs. Reverse Voltage
Figure 7. Capacitance vs. Reverse Voltage
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PCFFS4065AF
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
40
30
20
10
0
200
400
600 650
0
, REVERSE VOLTAGE (V)
VR
Figure 8. Capacitance Stored Energy
2
DUTY CYCLE−DESCENDING ORDER
1
0.5
P
DM
0.1
t
1
0.2
0.1
t
2
0.05
0.02
0.01
NOTES:
Z
(t) = r(t) x R
o
qJC
qJC
0.01
R
= 0.43 C/W
qJC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
SINGLE PULSE
J
DM
qJC C
1
2
0.001
10−6
10−5
10−4
t, RECTANGULAR PULSE DURATION (sec)
10−3
10−2
10−1
1
Figure 9. Junction−to−Case Transient Thermal Response Curve
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5
PCFFS4065AF
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
DUT
V
DD
−
t
0
t
1
t
2
t
Figure 10. Unclamped Inductive Switching Test Circuit & Waveform
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6
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