PCRKA20065F8 [ONSEMI]

650V / 200A Extremefast 二极管;
PCRKA20065F8
型号: PCRKA20065F8
厂家: ONSEMI    ONSEMI
描述:

650V / 200A Extremefast 二极管

二极管
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
August 2016  
PCRKA20065F8  
650V / 200A Extremefast Diode  
Features  
AEC-Q101 Qualified  
Maximum Junction Temperature 175°C  
Extremefast Technology with Soft Recovery  
Low Forward Voltage (VF = 1.35V (Typ) @IF = 200A)  
Applications  
Automotive Traction Modules  
General Power Modules  
Ordering Information  
P/N  
Packing  
mils  
PCRKA20065F8  
Wafer (Saw-On-Foil)  
m  
Die Size  
Anode Area  
197 X 394  
176 X 373  
3.14  
5,000 X 10,000  
4,478 X 9,475  
Scribe Lane  
80  
77  
Die thickness  
3
Top Metal  
Al (0.5% Cu)  
VNi/Ag  
Back Metal  
Topside Passivation  
Wafer diameter  
Max. Possible Die per Wafer  
Silicon Nitride Plus Polyimide  
200mm  
487  
©2016 Fairchild Semiconductor Corporation  
PCRKA20065F8 Rev. 1.1  
www.fairchildsemi.com  
1
Absolute Maximum Ratings (TVJ =25oC unless otherwise specified)  
Symbol  
Parameter  
Vo l t a g e C a t h o d e t o A n o d e  
Ratings  
6 5 0  
Units  
V
VR  
IF  
Continuous forward current  
Junction Temperature Range  
Operating Junction Temperature  
StorageTemperatureRange  
(Note 1)  
A
-55 to +175  
-55 to +150  
+17 to +25  
oC  
oC  
oC  
TVJ  
Tstg  
Notes:  
1: Depends on the thermal properties of assembly  
Electrical Characteristics of the Diode (TVJ =25oC unless otherwise noted)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Units  
Static Characteristics (tested on wafer)  
IR  
VBR  
VF  
Reverse Current  
Breakdown Voltage  
Forward Voltage  
VR = 650V  
-
-
-
30  
-
A  
V
IR = 1mA  
IF = 100A  
650  
0.7  
1.15  
1.7  
V
Electrical Characteristics (not subject to production test, verified by design / characterization)  
IR  
Reverse Current  
VR = 650V, TVJ = 175oC  
-
-
-
850  
1.35  
1.30  
A  
V
IF = 200A  
IF = 200A, TVJ = 175oC  
1.9  
-
VF  
Forward Voltage  
V
Reverse Recovery  
Charge  
Reverse Recovery  
Current  
Reverse Recovery  
Time  
-
Qrr  
-
-
-
-
-
-
3.2  
55  
C  
A
IF = 200A, VR = 400V,  
dIF/dt = 1000A/s, TVJ  
=
=
Irr  
Trr  
Qrr  
Irr  
25oC  
117  
15.1  
122  
247  
ns  
C  
A
Reverse Recovery  
Charge  
IF = 200A, VR = 400V,  
dIF/dt = 1000A/s, TVJ  
175oC  
Reverse Recovery  
Current  
Reverse Recovery  
Time  
Trr  
ns  
For ordering, technique and other information on Fairchild automotive bare die products, please contact  
automotivedie@fairchildsemi.com  
©2016 Fairchild Semiconductor Corporation  
PCRKA20065F8 Rev. 1.1  
www.fairchildsemi.com  
2
August 2016  
Physical Dimensions  
©2016 Fairchild Semiconductor Corporation  
PCRKA20065F8 Rev. 1.1  
www.fairchildsemi.com  
3
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not  
intended to be an exhaustive list of all such trademarks.  
®
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tm  
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CTL™  
Green FPS™ e-Series™  
Gmax™  
GTO™  
IntelliMAX™  
ISOPLANAR™  
PowerXS™  
®
TinyLogic  
Programmable Active Droop™  
TINYOPTO™  
TinyPower™  
TinyPWM™  
TinyWire™  
®
QFET  
QS™  
Quiet Series™  
Current Transfer Logic™  
Marking Small Speakers Sound Louder RapidConfigure™  
TranSiC™  
®
DEUXPEED  
and Better™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
TriFault Detect™  
TRUECURRENT *  
Dual Cool™  
®
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Saving our world, 1mW/W/kW at a time™  
SignalWise™  
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MicroPak2™  
MillerDrive™  
MotionMax™  
SMART START™  
®
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Solutions for Your Success™  
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®
®
SPM  
Ultra FRFET™  
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VCX™  
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XS™  
Fairchild  
®
®
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Fairchild Semiconductor  
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®
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®
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FETBench™  
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mWSaver  
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SupreMOS  
Xsens™  
®
®
SyncFET™  
仙童  
Sync-Lock™  
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AUTHORIZED USE  
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require  
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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications  
may change in any manner without notice.  
Advance Information  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later  
date. Fairchild Semiconductor reserves the right to make changes at any time without  
notice to improve design.  
Preliminary  
First Production  
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to  
make changes at any time without notice to improve the design.  
No Identification Needed  
Obsolete  
Full Production  
Datasheet contains specifications on a product that is discontinued by Fairchild  
Semiconductor. The datasheet is for reference information only.  
Not In Production  
Rev. I77  
www.fairchildsemi.com  
©2016 Fairchild Semiconductor Corporation  
4
PCRKA20065F8 Rev. 1.1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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