QEB363ZR [ONSEMI]

超小型塑料红外发光二极管;
QEB363ZR
型号: QEB363ZR
厂家: ONSEMI    ONSEMI
描述:

超小型塑料红外发光二极管

二极管
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON  
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA  
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended  
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out  
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor  
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
September 2006  
QEB363  
tm  
Subminiature Plastic Infrared Emitting Diode  
Features  
T-3/4 (2mm) Surface Mount Package  
Tape & Reel Option (See Tape & Reel Specifications)  
Lead Form Options: Gullwing, Yoke, Z-Bend  
Narrow Emission Angle, 24°  
Wavelength = 940nm, GaAs  
Clear Water Lens  
Matched Photosensor: QSB363  
High Radiant Intensity  
Package Dimensions  
ANODE  
0.276 (7.0)  
MIN  
0.087 (2.2)  
0.071 (1.8)  
0.024 (0.6)  
0.016 (0.4)  
0.019 (0.5)  
0.012 (0.3)  
0.074 (1.9)  
Schematic  
.059 (1.5)  
.051 (1.3)  
.118 (3.0)  
.102 (2.6)  
ANODE  
0.055 (1.4)  
0.008 (0.21)  
0.004 (0.11)  
0.024 (0.6)  
0.106 (2.7)  
0.091 (2.3)  
Notes:  
1. Dimensions are in inches (mm).  
2. Tolerance of .010 (.2ꢀ) on all non nominal dimensions unless otherwise specified.  
©2002 Fairchild Semiconductor Corporation  
QEB363 Rev. 1.0.0  
www.fairchildsemi.com  
Absolute Maximum Ratings (T = 2ꢀ°C unless otherwise specified)  
A
Symbol  
Parameter  
Rating  
-40 to +100  
-40 to +100  
240 for ꢀ sec  
260 for 10 sec  
ꢀ0  
Unit  
°C  
T
Operating Temperature  
Storage Temperature  
OPR  
T
°C  
STG  
(2,3,4)  
T
Soldering Temperature (Iron)  
Soldering Temperature (Flow)  
Continuous Forward Current  
Reverse Voltage  
°C  
SOL-I  
(2,3)  
T
°C  
SOL-F  
I
mA  
V
F
V
P
R
D
(1)  
Power Dissipation  
100  
mW  
Notes:  
1. Derate power dissipation linearly 1.33mW/°C above 2ꢀ°C.  
2. RMA flux is recommended.  
3. Methanol or isopropyl alcohols are recommended as cleaning agents.  
4. Soldering iron 1/16" (1.6mm) minimum from housing.  
Electrical/Optical Characteristics (T = 2ꢀ°C)  
A
Symbol  
Parameter  
Peak Emission Wavelength  
Emission Angle  
Forward Voltage  
Reverse Current  
Radiant Intensity  
Rise Time  
Test Conditions  
Min.  
Typ.  
940  
12  
Max.  
Units  
λ
I = 100mA  
nm  
°
P
F
Θ
I = 100mA  
F
V
I = 100mA, t = 20ms  
1.6  
V
F
F
p
I
V = ꢀV  
100  
µA  
R
R
I
I = 100mA, tp = 20ms  
8
mW/sr  
µs  
e
F
t
I = 100mA  
1
1
r
F
t
Fall Time  
t = 20ms  
µs  
f
p
©2002 Fairchild Semiconductor Corporation  
QEB363 Rev. 1.0.0  
www.fairchildsemi.com  
2
Typical Performance Curves  
Fig. 1 Maximum Forward Current vs.  
Temperature  
Fig. 2 Relative Radiant Intensity vs.  
Wavelength  
200  
160  
120  
80  
100  
IF = 20 mA  
TA = 25˚C  
80  
60  
40  
20  
40  
0
-25  
0
25  
50  
75 85 100  
0
880 900 920 940 960 980 1000 1020 1040  
Ambient Temperature T (˚C)  
A
Wavelength λ (nm)  
Fig. 3 Peak Emission Wavelength vs.  
Fig. 4 Forward Current vs.  
Ambient Temperature  
Forward Voltage  
500  
980  
200  
100  
960  
940  
920  
50  
20  
10  
5
900  
2
1
-25  
0
25  
50  
75  
100  
Ambient Temperature T (˚C)  
A
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5  
Forward Voltage V (V)  
F
Fig. 5 Relative Radiant Flux vs.  
Ambient Temperature  
20  
Fig. 6 Relative Radiant Intensity vs.  
Angular Displacement  
10  
30  
20  
10  
0
10  
20  
30  
5
40  
50  
40  
50  
2
1
0.5  
60  
70  
60  
70  
0.2  
0.1  
80  
90  
80  
90  
0.6  
0.4  
0.2  
0
0.2  
0.4  
0.6  
-25  
0
25  
50  
75  
100  
Ambient Temperature T (˚C)  
Ambient Temperature T (˚C)  
A
A
©2002 Fairchild Semiconductor Corporation  
QEB363 Rev. 1.0.0  
www.fairchildsemi.com  
3
Surface Mount Options for T-3/4 Package  
Features  
Three lead forming options: Gull Wing, Yoke and Z-Bend  
Compatible with automatic placement equipment  
Supplied on tape and reel or in bulk packaging  
Compatible with vapor phase reflow solder processes  
Gull Wing Lead Configuration  
Yoke Lead Configuration  
0.283 (7.2)  
0.098 (2.5)  
0.166 (4.2)  
0.016 (0.4)  
0.016 (0.4)  
ANODE  
ANODE  
0.020 (0.51)  
0.020 (0.5)  
0.074 (1.9)  
0.087 (2.2)  
0.071 (1.8)  
0.087 (2.2)  
0.071 (1.8)  
0.074 (1.9)  
0.024 (0.6)  
0.118 (3.0)  
0.102 (2.6)  
0.031 (0.8)  
0.078 (2.0)  
0.043 (1.1)  
.118 (3.0)  
.102 (2.6)  
0.055 (1.4)  
0.055 (1.4)  
0.051 (1.3)  
0.043 (1.1)  
0.008 (0.2)  
0.005 (0.13)  
0.106 (2.7)  
0.091 (2.3)  
0.141 (3.6)  
Z-Bend Lead Configuration  
0.236 (6.0)  
0.220 (5.6)  
0.177 (4.5)  
0.161 (4.1)  
0.127 (3.25)  
0.112 (2.85)  
0.016 (0.4)  
ANODE  
0.020 (0.5)  
0.087 (2.2)  
0.071 (1.8)  
0.074 (1.9)  
0.024 (0.6)  
0.031 (0.8)  
0.080 (2.0)  
0.043 (1.1)  
.118 (3.0)  
.102 (2.6)  
0.055 (1.4)  
0.106 (2.7)  
0.091 (2.3)  
Notes: (Applies to all package drawings)  
1. Dimensions are in inches (mm).  
2. Tolerance of .010 (.2ꢀ) on all non nominal dimensions unless otherwise specified.  
©2002 Fairchild Semiconductor Corporation  
QEB363 Rev. 1.0.0  
www.fairchildsemi.com  
4
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
®
ACEx™  
FACT Quiet Series™  
GlobalOptoisolator™  
GTO™  
OCX™  
OCXPro™  
OPTOLOGIC  
OPTOPLANAR™  
PACMAN™  
POP™  
Power247™  
PowerEdge™  
PowerSaver™  
SILENT SWITCHER  
SMART START™  
SPM™  
UniFET™  
UltraFET  
VCX™  
®
ActiveArray™  
Bottomless™  
Build it Now™  
CoolFET™  
CROSSVOLT™  
DOME™  
®
HiSeC™  
Stealth™  
Wire™  
2
I C™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TCM™  
TinyBoost™  
TinyBuck™  
i-Lo™  
ImpliedDisconnect™  
IntelliMAX™  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
MSXPro™  
EcoSPARK™  
2
E CMOS™  
®
EnSigna™  
FACT™  
PowerTrench  
®
QFET  
®
FAST  
QS™  
FASTr™  
FPS™  
FRFET™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
TinyPWM™  
TinyPower™  
®
TinyLogic  
TINYOPTO™  
TruTranslation™  
UHC™  
Across the board. Around the world.™  
The Power Franchise  
®
ScalarPump™  
Programmable Active Droop™  
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APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER  
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WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in  
accordance with instructions for use provided in the labeling, can be  
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2. A critical component is any component of a life support device or  
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cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Advance Information  
Product Status  
Definition  
Formative or In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I20  
©2002 Fairchild Semiconductor Corporation  
QEB363 Rev. 1.0.0  
www.fairchildsemi.com  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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