QSE158 [ONSEMI]
塑料硅 OPTOLOGIC 光电传感器;
| 型号： | QSE158 |
| 厂家： | 
ONSEMI |
| 描述： | 塑料硅 OPTOLOGIC 光电传感器 LTE 输出元件 光电 传感器 |
| 文件： | 总9页 (文件大小：369K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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February 2016
tm
QSE158, QSE159
Plastic Silicon OPTOLOGIC® Photosensor
Features
Description
■ Bipolar silicon IC
The QSE15X family are OPTOLOGIC® ICs which
feature a Schmitt trigger at output which provides hyster-
esis for noise immunity and pulse shaping. The basic
building block of this IC consists of a photodiode, a linear
amplifier, voltage regulator, Schmitt trigger and four out-
put options. The TTL/LSTTL compatible output can drive
up to ten TTL loads over supply currents from 4.5 to 16.0
Volts. The devices are marked with a color stripe for
easy identification.
■ Package type: Sidelooker
■ Medium wide reception angle, 50°
■ Package material and color: black epoxy
■ Matched emitter: QEE113/QEE123
■ Daylight filter
■ High sensitivity
■ Direct TTL/LSTTL interface
Package Dimensions
ø1.65
4.39
4.49
2.49
2.59
2.17
2.27
5.03
5.13
3.76
3.86
2.54
3.56
ø2.41
12.7
MIN
Part Number Definitions
Open-collector, buffer output
Open-collector, inverter output
Color Code
Green
QSE158
QSE159
Blue
0.63
0.89
0.32
NOM
Input/Output Table
Part Number
Light
On
Output
HIGH
LOW
1.9 NOM 2X
Vcc
QSE158
GND
Vout
Off
QSE159
On
LOW
0.51 SQ. NOM
2.49
2.59
Off
HIGH
Note:
1. Dimensions for all drawings are in millimeters.
©2004 Fairchild Semiconductor Corporation
www.fairchildsemi.com
QSE158, QSE159 Rev. 1.5
Block Diagrams
V
V
V
V
CC
CC
VOLTAGE
REGULATOR
VOLTAGE
REGULATOR
OUT
OUT
LA
LA
GND
GND
QSE159
Open-Collector Output Inverter
QSE158
Open-Collector Output Buffer
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Rating
-40 to +85
-40 to +100
240 for 5 sec
260 for 10 sec
50
Unit
°C
T
Operating Temperature
Storage Temperature
OPR
T
°C
STG
(2,3,4)
T
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Output Current
°C
SOL-I
(2,3)
T
°C
SOL-F
I
mA
V
O
V
Supply Voltage
4.0 to 16
35
CC
V
Output Voltage
V
O
(1)
P
Power Dissipation
100
mW
D
Notes:
1. Derate power dissipation linearly 2.50mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron tip 1/16" (1.6mm) minimum from housing.
©2004 Fairchild Semiconductor Corporation
QSE158, QSE159 Rev. 1.5
www.fairchildsemi.com
2
Electrical Characteristics (T = -40°C to +85°C, V = 4.5V to 16V)
A
CC
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Units
2
Ee(+)
Positive Going Threshold
T = 25°C
0.025
0.250 mW/cm
A
(5)
Irradiance
Ee(+)/Ee(-) Hysteresis Ratio
1.10
2.00
(5)
2
I
Supply Current
Ee = 0 or 0.3mW/cm
f = DC to 50MHz
5.0
mA
V
CC
Peak to Peak Ripple which
will Cause False Triggering
2.00
QSE158 (Buffer Open Collector)
(5)
2
I
High Level Output Current
Low Level Output Voltage
Ee = 0.3mW/cm , V = 30V
100
µA
V
OH
OH
V
Ee = 0, I = 16mA
0.40
OL
OL
QSE159 (Inverter Open Collector)
High Level Output Current
I
Ee = 0, V = 30V
100
µA
V
OH
OH
(5)
2
V
Low Level Output Voltage
QSE158, QSE159
Ee = 0.3mW/cm , I = 16mA
0.40
OL
OL
2
t , t
Output Rise, Fall Times
Propagation Delay
Ee = 0 or 0.3mW/cm ,
100
nS
µS
R
F
f = 10kHz, DC = 50%,
t
, t
6.0
PHL PLH
(5)
R = 360Ω
L
Note:
5. λ = 880nm (AlGaAs).
©2004 Fairchild Semiconductor Corporation
QSE158, QSE159 Rev. 1.5
www.fairchildsemi.com
3
Typical Performance Curves (Sensor Coupled to QEE113 Emitter)
Fig. 2 Output Voltage vs. Input Current (Buffers)
Fig. 1 Output Voltage vs. Input Current (Inverters)
6
5
4
3
2
1
0
6
5
4
3
2
1
0
V
R
= 5 V
= 270Ω
= 25°C
CC
V
R
= 5 V
= 270Ω
= 25°C
CC
V
OH
V
OH
L
L
T
A
T
A
d = 4mm
d = 4mm
I
I
I
I
F (ON)
F (OFF)
F (ON)
F (OFF)
V
OL
V
OL
0
1
2
3
4
5
0
1
2
3
4
5
IF - Input Current (mA)
IF - Input Current (mA)
Fig. 3 Threshold Current vs. Distance
Fig. 4 Normalized Threshold Current vs. Supply Voltage
10
8
1.6
Normalized to:
6
Turn ON Threshold
1.4
V
CC
= 5 V
4
T
A
= 25°C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2
I
F (ON)
Normalized to:
V
R
= 5 V
= 270Ω
= 25°C
CC
1.0
0.8
0.6
L
I
F (OFF)
T
A
d = 4mm
0.4
Pulsed 100Hz
PW = 100μs
0.2
0.1
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
16
d - Distance (mm)
VCC - Supply Voltage (V)
©2004 Fairchild Semiconductor Corporation
QSE158, QSE159 Rev. 1.5
www.fairchildsemi.com
4
Typical Performance Curves (Sensor Coupled to QEE113 Emitter) (Continued)
Fig. 5 Normalized Threshold Current
vs. Ambient Temperature
Fig. 6 Low Output Voltage vs. Output Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
Normalized to:
V
= 5 V
CC
= 25°C
V
CC
= 5 V
T
A
T
A
= 25°C
I
F
= 10 mA
I
F (OFF)
I
F (ON)
I
I
F (ON)
0.1
F (OFF)
0.01
-40
-20
0
20
40
60
80
100
1
1
0
I
- Output Current (mA)
T
- Ambient Temperature (˚C)
O
A
Fig. 7 Response Time vs. Forward Current
5
V
R
= 5 V
CC
= 270Ω
L
T
= 25°C
Pulsed
A
4
3
2
1
0
I
F
T = 10 ms
Duty Cycle = 50%
T
PLH
T
PHL
0
5
10
15
20
I
- Forward Current (mA)
F
©2004 Fairchild Semiconductor Corporation
QSE158, QSE159 Rev. 1.5
www.fairchildsemi.com
5
Fig. 8 Switching Speed Test Circuit
C2
5V
R1
R2
.1 uf
bypass
Pulse
Generator
= 5V
f = 10 KHz
d.c. = 50%
C1
GND
V
O
R1= 360Ω
R2= 180Ω
C1= 15 pf
C2= 20 pf
C1and C2 include probe and
stray wire capacitance
Fig. 9 Switching Times Definition for Buffers
Fig. 10 Switching Times Definition for Inverters
50%
50%
0 mA
0 mA
tPLH
tPHL
tPHL
tPLH
VOH
VOH
10%
90%
90%
10%
90%
10%
10%
90%
Output
VO
Output
VO
50%
VOL
VOL
tr
tf
tf
tr
©2004 Fairchild Semiconductor Corporation
QSE158, QSE159 Rev. 1.5
www.fairchildsemi.com
6
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
OPTOPLANAR®
AccuPower
AttitudeEngine™
Awinda®
F-PFS
®*
FRFET®
Global Power ResourceSM
GreenBridge
Green FPS
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Gmax
TinyBoost®
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TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
®
AX-CAP®*
Power Supply WebDesigner
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PowerXS™
BitSiC
Build it Now
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CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax
Programmable Active Droop
GTO
IntelliMAX
QFET®
QS
ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
Quiet Series
RapidConfigure
TriFault Detect
TRUECURRENT®*
SerDes
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM®
ESBC
MicroPak
®
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MicroPak2
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VCX
VisualMax
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XS™
Fairchild®
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STEALTH
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SupreMOS®
SyncFET
Sync-Lock™
MVN®
mWSaver®
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仙童®
OptoHiT
OPTOLOGIC®
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I77
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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