RURP15100-F085P [ONSEMI]
1000V，15A，1.35V，TO-220（2 引线）Ultrafast 流器;
| 型号： | RURP15100-F085P |
| 厂家： | 
ONSEMI |
| 描述： | 1000V，15A，1.35V，TO-220（2 引线）Ultrafast 流器 超快软恢复二极管 快速软恢复二极管 局域网 测试 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
RURP15100-F085
15A 1000V Ultrafast Rectifier
Features
15A, 1000V Ultrafast Rectifier
•
•
•
•
High Speed Switching ( trr=200ns(Typ.) @ IF=15A )
Low Forward Voltage( VF=1.8V(Max.) @ IF=15A )
Avalanche Energy Rated
The RURP15100-F085 is an ultrafast diode with soft
recovery characteristics (trr< 200ns). It has a low forward
voltage drop and is of silicon nitride passivated, ion-
implanted, epitaxial construction.
This device is intended for use as a freewheeling/
clamping diode and rectifier in a variety of automotive
power supplies and other power switching automotive
applications. Its low stored charge and ultrafast recovery
with soft recovery characteristics minimizes ringing and
electrical noise in many power switching circuits, thus
reducing power loss in the switching transistor.
AEC-Q101 Compliant
Applications
•
•
•
•
Automotive DCDC converter
Automotive On Board Charger
Switching Power Supply
Power Switching Circuits
Pin Assignments
1
2
1. Cathode
2. Anode
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
1000
1000
1000
15
Units
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
V
V
Working Peak Reverse Voltage
DC Blocking Voltage
V
IF(AV)
IFSM
EAVL
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Avalanche Energy(1A,40mH)
@ TC = 25°C
A
45
A
20
mJ
°C
T
J, TSTG
Operating Junction and Storage Temperature
- 55 ~175
Thermal Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Max
0.94
85
Units
°C/W
°C/W
RθJC
RθJA
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
Device
Package
Tube
Quantity
RURP15100
RURP15100-F085
TO-220AC
-
50
© 2014 Semiconductor Components Industries, LLC
August-2017, Rev. 3
1
Publication Order Number:
RURP15100-F085/D
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
IR
Instantaneous Reverse Current VR = 1000V
TC = 25 °C
TC = 175 °C
TC = 25 °C
-
-
-
-
100
uA
uA
1000
1
VF
Instantaneous Forward Voltage IF = 15A
-
-
1.35
1.14
1.8
1.6
V
V
T
C = 175 °C
2
trr
Reverse Recovery Time
Reverse Recovery Time
IF =1A, di/dt = 100A/μs,
VR=650V
TC = 25 °C
-
126
260
ns
IF =15A, di/dt = 100A/μs,
VR=650V
-
-
200
720
450
-
ns
ns
T
C = 25 °C
TC = 175 °C
ta
tb
IF =15A, di/dt = 100A/μs,
VR=650V
TC = 25 °C
-
-
-
63
137
683
-
-
-
ns
ns
nC
Qrr
Reverse Recovery Charge
Avalanche Energy
WAVL
IAV=1.0A, L=40mH
20
-
-
mJ
Notes:
1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%
2.Guaranteed by design.
Test Circuit and Waveforms
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2
Typical Performance Characteristics
Figure 2. Typical Reverse Current vs.
Figure 1. Typical Forward Voltage Drop
Reverse Voltage
vs. Forward Current
1000
100
TC = 175oC
TC = 125oC
100
10
TC = 175oC
10
1
0.1
TC = 125oC
TC = 25oC
1
0.01
1E-3
1E-4
TC = 25oC
0.1
0.1
0
200
400
600
800
1000
0.5
1.0
1.5
2.0
2.5
Reverse Voltage, VR [V]
Forward Voltage, VF [V]
Figure 3.Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. di/dt
250
800
IF = 15A
Typical Capacitance
at 10V = 60pF
200
150
100
50
600
400
200
0
TC = 175oC
TC = 125oC
TC = 25oC
0
0.1
1
10
100
100
200
300
400
500
Reverse Voltage, VR[V]
di/dt [A/μs]
Figure 6. Forward Current Derating Curve
Figure 5. Typical Reverse Recovery
Current vs. di/dt
30
90
IF = 15A
TC = 175oC
25
TC = 125oC
60
30
0
20
15
TC = 25oC
10
5
100
200
300
di/dt [A/μs]
400
500
25
50
75
100
125
150
175
Case temperature, TC [oC]
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3
Typical Performance Characteristics (Continued)
Figure 7. Reverse Recovery Charge
6000
4500
3000
1500
0
IF = 15A
TC = 175oC
TC = 125oC
TC = 25oC
100
200
300
400
500
di/dt [A/μs]
Figure 8. Transient Thermal Response Curve
1
D=0.5
0.2
PDM
t1
t2
0.1
0.05
0.1
0. 02
* Notes :
0.01
single pulse
o
1. Z
(t) = 0.94 C/W Typ.
thJC
2. Duty Factor, D=t /t
1 2
3. T
JM
- T = P
C
* Z
(t)
DM thJC
101
0.01
10-5
10-4
10-3
10-2
10-1
100
102
t , SquareWave Pulse Duration [sec]
1
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4
Mechanical Dimensions
TO-220-2L
3.636
0.36
10.360
10.109
A
M
B A
C
8.89
6.86
B
2.860
2.660
1.400
1.146
6.477
6.121
7°
3°
3
12.878
12.190
15.215
14.757
8.787
8.587
5°
3°
5°
3°
1
2
0.60 MAX
2.755
2.555
13.894
12.941
3.962
3.720
1.65
1.25
1.91
0.889
0.787
M
0.36
C A B
0.457
0.357
2.640
2.440
5.180
4.980
NOTES:
5°
3°
5°
3°
A. PACKAGE REFERENCE: JEDEC TO220
VARIATION AC.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DRAWING FILE NAME: TO220B02REV5
4.672
4.472
Dimensions in Millimeters
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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