SBAS40LT3G [ONSEMI]
Schottky Barrier Diodes;
| 型号： | SBAS40LT3G |
| 厂家： | 
ONSEMI |
| 描述： | Schottky Barrier Diodes 二极管 |
| 文件： | 总3页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS40L, SBAS40L
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
http://onsemi.com
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
40 VOLTS
SCHOTTKY BARRIER DIODES
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
SOT−23 (TO−236)
CASE 318
Rating
Reverse Voltage
Symbol
Value
Unit
V
R
40
V
STYLE 8
Forward Power Dissipation
P
F
@ T = 25°C
225
1.8
mW
mW/°C
A
3
1
Derate above 25°C
CATHODE
ANODE
Operating Junction and Storage
Temperature Range
T
T
−55 to +150
°C
J, stg
MARKING DIAGRAM
Forward Continuous Current
I
120
mA
mA
F
Forward Surge Current
t v 1 s
t v 10 ms
I
FSM
200
600
B1 M G
G
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
R
508
311
°C/W
q
JA
B1 = Specific Device Code
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad.
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
2. FR−4 @ 1.0 x 1.0 in pad.
ORDERING INFORMATION
†
Device
Package
Shipping
BAS40LT1G,
SBAS40LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BAS40LT3G,
SBAS40LT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
November, 2012 − Rev. 10
BAS40LT1/D
BAS40L, SBAS40L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
40
−
Max
−
Unit
Reverse Breakdown Voltage
(I = 10 mA)
R
V
(BR)R
V
Total Capacitance
C
pF
T
(V = 1.0 V, f = 1.0 MHz)
5.0
1.0
380
500
1.0
R
Reverse Leakage
I
R
mAdc
mVdc
mVdc
Vdc
(V = 25 V)
−
R
Forward Voltage
V
F
V
F
V
F
(I = 1.0 mAdc)
−
F
Forward Voltage
(I = 10 mAdc)
−
F
Forward Voltage
(I = 40 mAdc)
−
F
100
10
100
10
T = 150°C
A
125°C
85°C
1.0
150°C
0.1
1.0
0.1
1ꢀ25°C
85°C
25°C
25°C
0.01
-ꢀ40°C
0.3
-ꢀ55°C
0.4
0.5
0.001
25
0
0.1
0.2
0.6
0.7
0.8
0
5.0
10
15
20
V , REVERSE VOLTAGE (VOLTS)
R
V , FORWARD VOLTAGE (VOLTS)
F
Figure 1. Typical Forward Voltage
Figure 2. Reverse Current versus Reverse
Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5.0
10
15
20
25
30
35
40
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Typical Capacitance
http://onsemi.com
2
BAS40L, SBAS40L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
D
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
c
1
2
b
0.25
e
q
H
q
2.10
0°
2.40
−−−
2.64
10°
0.083
0°
0.094
−−−
0.104
10°
A
E
L
A1
STYLE 8:
PIN 1. ANODE
L1
VIEW C
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BAS40LT1/D
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