SBE805-TL-E [ONSEMI]
30V, 500mA Rectifier; 30V ， 500毫安整流器
| 型号： | SBE805-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | 30V, 500mA Rectifier |
| 文件： | 总3页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN7291
Silicon Schottky Barrier Diode
SBE805
30V, 500mA Rectifier
Features
Package Dimensions
unit : mm
•
Low forward voltage (V max=0.55V).
F
• Fast reverse recovery time (t max=10ns).
1294
rr
•
Composite type with 2 diodes contained in the CPH
[SBE805]
package currently in use, improving the mounting
efficiency greatly.
The chips incorporated are both equivalent to
2.9
4
0.15
5
3
2
•
0.05
the SB05-03C.
1
0.95
0.4
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
0.4
SANYO : CPH5
Specifications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Symbol
Conditions
Ratings
Unit
V
V
30
RRM
RSM
V
35
500
V
I
O
mA
A
Surge Forward Current
I
50Hz sine wave, 1 cycle
5
FSM
Tj
Junction Temperature
--55 to +125
--55 to +125
°C
°C
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C (Value per element)
Ratings
typ
Parameter
Reverse Voltage
Symbol
Conditions
Unit
min
max
V
I
=150µA
30
V
V
R
R
Forward Voltage
Reverse Current
V
I =500mA
F
0.55
F
I
R
V
V
=15V
R
30
µA
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Marking : SE
C
=10V, f=1MHz
R
16
pF
t
rr
I =I =100mA, see specified Test Circuit.
10
ns
F R
Rth(j-a)
300
°C / W
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
http://semicon.sanyo.com/en/network
O1002 TS IM TA-3609 No.7291-1/3
SBE805
Electrical Connection
t
Test Circuit
rr
5
4
3
Duty≤10%
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
50Ω
100Ω
10Ω
10µs
1
2
(Top view)
5V
t
rr
I
-- V
F
I
-- V
R
F
R
2
2
1000
1.0
5
2
7
5
100
3
2
5
2
0.1
10
7
5
5
2
3
2
1.0
5
2
0.01
0.1
7
5
5
2
3
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
5
10
15
20
25
30
35
Forward Voltage, V -- V
ITR10727
Reverse Voltage, V -- V
R
ITR10728
F
C -- V
I
-- t
R
S
2
7
6
5
4
3
2
f=1MHz
Current waveform 50Hz sine wave
100
IS
7
5
20ms
t
3
2
10
7
5
1
0
3
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
1.0
2
3
1.0
10
100
ITR10729
0.01
0.1
Reverse Voltage, V -- V
Time, t -- s
ITR10730
R
No.7291-2/3
SBE805
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2002. Specifications and information herein are subject
to change without notice.
PS No.7291-3/3
相关型号：
SBE808-TL-E
Schottky Barrier Diode, 15V, 1A, Low IR, Non-Monolithic Dual MCPH5, MCPH5, 3000-REEL
ONSEMI
SBE812-TL-E
Schottky Barrier Diode, 60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode, SOT-28FL / VEC8, 3000-REEL
ONSEMI
©2020 ICPDF网 联系我们和版权申明