SBE808-TL-W [ONSEMI]
肖特基势垒整流器,15V,1A,低 IR,非单片,双 MCPH5;型号: | SBE808-TL-W |
厂家: | ONSEMI |
描述: | 肖特基势垒整流器,15V,1A,低 IR,非单片,双 MCPH5 PC |
文件: | 总4页 (文件大小:1030K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA0451B
SBE808
Schottky Barrier Diode
http://onsemi.com
15V, 1A, Low I
R
Applications
•
ꢀ Highꢀfrequencyꢀrectificationꢀ(switchingꢀregulators,ꢀconverters,ꢀchoppers)
Features
•
•
•
•
ꢀ Smallꢀswitchingꢀnoiseꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ ꢀꢀHalogenꢀfreeꢀcompliance
ꢀ Lowꢀleakageꢀcurrentꢀandꢀhighꢀreliabilityꢀdueꢀtoꢀplanarꢀstructure
ꢀ Ultrasmallꢀpackageꢀpermittingꢀappliedꢀsetsꢀtoꢀbeꢀsmallꢀandꢀslim
Specifications
ꢀatꢀTa=25°Cꢀ(Valueꢀperꢀelement)
Absolute Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Symbol
Conditions
Ratings
Unit
V
V
V
15
RRM
RSM
17
1
V
I
I
A
O
Surge Forward Current
50Hz sine wave, 1 cycle
10
A
FSM
Junction Temperature
Tj
--55 to +150
--55 to +150
°C
°C
Storage Temperature
Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Product & Package Information
Package Dimensions
unitꢀ:ꢀmmꢀ(typ)
•ꢀPackageꢀ
:ꢀMCPH5
•ꢀJEITA,ꢀJEDECꢀ
:ꢀSC-88A,ꢀSC-70-5,ꢀSOT-353
7021A-001
•ꢀMinimumꢀPackingꢀQuantityꢀ :ꢀ3,000ꢀpcs./reel
SBE808-TL-E
SBE808-TL-W
2.0
0.15
Packing Type : TL
Marking
5
4
3
SE
0 to 0.02
TL
1
2
0.65
0.3
Electrical Connection
5
4
1 : Anode
2 : No Contact
3 : Anode
4 : Cathode
5 : Cathode
1
2
3
4
1
2
3
MCPH5
5
ORDERING INFORMATION
Seeꢀdetailedꢀorderingꢀandꢀshippingꢀinformationꢀonꢀpageꢀ2ꢀofꢀthisꢀdataꢀsheet.
SemiconductorꢀComponentsꢀIndustries,ꢀLLC,ꢀ2014
May, 2014
52714HKꢀTC-00002916/91912TKIM/N0106SYIMꢀSBꢀNo.ꢀA0451-1/4
SBE808
atꢀTa=25°Cꢀ(Valueꢀperꢀelement)
Electrical Characteristics
Ratings
typ
Parameter
Reverse Voltage
Symbol
Conditions
Unit
min
max
V
I
=0.1mA
R
15
V
V
V
R
V 1
F
I =0.5A
F
0.43
0.49
0.48
Forward Voltage
V 2
F
I =1A
F
0.54
3.0
Reverse Current
I
V
=6V
A
m
R
R
R
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
C
V
=10V, f=1MHz
20
pF
ns
t
I =I =100mA, See specified Test Circuit.
When mounted on ceramic substrate (600mm2 0.8mm)
10
rr
Rth(j-a)
F R
185
°C / W
×
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
t
Test Circuit
rr
Duty≤10%
50Ω
100Ω
10Ω
10ms
--5V
t
rr
Ordering Information
Device
Package
MCPH5
MCPH5
Shipping
memo
Pb-Free
SBE808-TL-E
3,000pcs./reel
3,000pcs./reel
SBE808-TL-W
Pb-Free and Halogen Free
I
-- V
I
-- V
R
F
F
R
10
7
10000
1000
100
5
3
2
1.0
7
5
75°C
50°C
10
3
2
0.1
7
5
1.0
0.1
3
2
0.01
7
0.01
0.001
5
3
2
0.001
0.0001
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
IT11243
2
4
6
8
10
12
14
16
Forward Voltage, V -- V
F
IT11244
Reverse Voltage, V -- V
R
P (AV) -- I
P (AV) -- V
F
O
R
RM
0.7
0.6
0.5
0.4
0.3
0.2
1.2E--05
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(1)
(2) (4) (3)
(1)
(2)
1.0E--05
8.0E--06
6.0E--06
4.0E--06
Rectangular
wave
V
R
(3)
(4)
θ
Rectangular wave
360°
Sine wave
θ
V
R
360°
Sine wave
180°
360°
2.0E--06
0.0E+00
0.1
0
180°
360°
1.0
0
2
4
6
8
10
12
14
16
0
0.2
0.4
0.6
0.8
1.2
IT11245
Average Output Current, I -- A
Peak Reverse Voltage, V
RM
-- V
IT11246
O
No.ꢀA0451-2/4
SBE808
C -- V
I
-- t
R
FSM
12
10
100
f=1MHz
Current waveform 50Hz sine wave
7
I
S
20ms
t
5
8
6
4
3
2
2
0
10
0.1
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
1.0
2
3
1.0
10
0.01
0.1
Reverse Voltage, V -- V
IT07885
Time, t -- s
IT00626
R
No.ꢀA0451-3/4
SBE808
Outline Drawing
Land Pattern Example
ꢀ SBE808-TL-E,ꢀSBE808-TL-W
Mass (g) Unit
0.008
Unit: mm
mm
* For reference
0.4
0.65 0.65
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PSꢀNo.ꢀA0451-4/4
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