SCH1334-TL-H [ONSEMI]
P-Channel Power MOSFET, -12V, -1.6A, 215mΩ, Single SCH6, SOT-563 / SCH6, 5000-REEL;型号: | SCH1334-TL-H |
厂家: | ONSEMI |
描述: | P-Channel Power MOSFET, -12V, -1.6A, 215mΩ, Single SCH6, SOT-563 / SCH6, 5000-REEL |
文件: | 总7页 (文件大小:377K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA1656A
SCH1334
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
12V, 1.6A, 215m , Single SCH6
Features
•
Low ON-resistance
•
•
•
•
High-speed switching
1.8V drive
Halogen free compliance
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--12
Unit
V
V
DSS
V
±10
V
GSS
I
--1.6
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm)
--6.4
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
0.8
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: SCH6
7028-002
• JEITA, JEDEC
: SOT-563
• Minimum Packing Quantity : 5,000 pcs./reel
SCH1334-TL-H
1.6
0.2
Packing Type : TL
Marking
YK
0.2
6
5
4
TL
3
2
1
0.5
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Electrical Connection
1, 2, 5, 6
SCH6
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/41410PE TKIM TC-00002318 No. A1656-1/7
SCH1334
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--12
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =--1mA, V =0V
D GS
(BR)DSS
I
V
=--12V, V =0V
--10
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
μ
GSS
GS DS
V
(off)
|
V
=--6V, I =--1mA
--0.4
1.2
--1.3
V
GS
yfs
DS D
Forward Transfer Admittance
V
DS
=--6V, I =--0.8A
D
2.1
S
|
R
R
R
(on)1
(on)2
(on)3
I
=--0.8A, V =--4.5V
GS
165
245
370
120
46
215
345
560
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=--0.4A, V =--2.5V
GS
m
m
I
D
=--0.1A, V =--1.8V
GS
Input Capacitance
Ciss
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--6V, f=1MHz
pF
pF
ns
DS
36
t
t
t
t
(on)
4.9
d
r
17.5
16.0
16.5
1.6
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--6V, V =--4.5V, I =--1.6A
GS
0.27
0.43
--0.88
DS
D
V
SD
I =--1.6A, V =0V
S GS
--1.2
Switching Time Test Circuit
V = --6V
DD
V
IN
0V
--4.5V
I
= --0.8A
D
V
IN
R =7.5Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
SCH1334
P. G
50Ω
S
Ordering Information
Device
Package
SCH6
Shipping
5,000pcs./reel
memo
SCH1334-TL-H
Pb Free and Halogen Free
No. A1656-2/7
SCH1334
I
D
-- V
DS
I
-- V
D GS
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
V
= --10V
DS
--0.2
0
--0.2
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
IT15350
Drain-to-Source Voltage, V
DS
-- V
IT15349
Gate-to-Source Voltage, V -- V
GS
R
(on) -- V
R
(on) -- Ta
DS
GS
DS
700
600
500
400
300
200
600
500
400
300
200
Ta=25°C
I
= --0.1A
D
--0.4A
--0.8A
100
0
100
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT15351
Ambient Temperature, Ta -- °C
IT15352
GS
| yfs | -- I
I
-- V
D
S SD
5
5
V
= --10V
V
=0V
DS
GS
3
2
3
2
--1.0
7
5
1.0
7
3
2
5
--0.1
7
5
3
2
3
2
0.1
--0.01
--0.01
2
3
5
7
2
3
5
7
--1.0
2
3
5
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT15354
--0.1
Drain Current, I -- A
IT15353
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
2
3
2
V
V
= --6V
f=1MHz
DD
= --4.5V
GS
100
7
5
100
3
2
7
5
t
f
10
7
5
3
2
t (on)
d
3
2
10
1.0
--0.01
2
3
5
7
2
3
5
7
2
3
5
0
--2
--4
--6
--8
--10
--12
IT15356
--0.1
--1.0
Drain Current, I -- A
IT15355
Drain-to-Source Voltage, V -- V
DS
D
No. A1656-3/7
SCH1334
A S O
V
GS
-- Qg
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
2
V
I
= --6V
= --1.6V
DS
D
--10
7
5
I
= --6.4A(PW≤10μs)
DP
3
2
I
= --1.6A
D
--1.0
7
5
3
2
Operation in this area
is limited by R (on).
--0.1
DS
7
5
3
2
Ta=25°C
--0.5
0
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2
3
5
7
2
3
5
7
2
3
5
7
2
3
--0.1
--1.0
--10
Total Gate Charge, Qg -- nC
IT15362
Drain-to-Source Voltage, V
-- V
IT15357
DS
P
-- Ta
D
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT15358
No. A1656-4/7
SCH1334
Taping Specification
SCH1334-TL-H
No. A1656-5/7
SCH1334
Outline Drawing
Land Pattern Example
SCH1334-TL-H
Mass (g) Unit
Unit: mm
0.004
mm
* For reference
0.3
0.5 0.5
No. A1656-6/7
SCH1334
Note on usage : Since the SCH1334 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1656-7/7
相关型号:
SCH1335-TL-H
P-Channel Power MOSFET, -12V, -2.5A, 112mΩ, Single SCH6, SOT-563 / SCH6, 5000-REEL
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