SFT1101TP-FA [ONSEMI]
Small Signal Bipolar Transistor, 2.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4 PIN;
| 型号： | SFT1101TP-FA |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal Bipolar Transistor, 2.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4 PIN 开关 晶体管 |
| 文件： | 总4页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1166
SANYO Sem iconductors
DATA S HEET
PNP Epitaxial Planar Silicon Transistor
SFT1101
High-Voltage Switching Applications
Applications
•
DC / DC converters, relay drivers, lamp drivers, motor drivers.
Features
•
•
•
•
•
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
--120
--120
--120
-- 7
V
V
CES
CEO
EBO
V
V
V
V
I
C
--2.5
-- 4
A
Collector Current (Pulse)
Base Current
I
A
CP
I
B
--500
1
mA
W
W
°C
°C
Collector Dissipation
P
C
Tc=25°C
15
Junction Temperature
Storage Temperature
Marking : T1101
Tj
Tstg
150
--55 to +150
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73008EA TI IM TC00001472
No. A1166-1/4
SFT1101
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=--80V, I =0A
Unit
min
max
Collector Cutoff Current
I
V
V
V
V
V
--1
--1
μA
μA
CBO
CB
EB
CE
CE
CB
E
Emitter Cutoff Current
I
=--5V, I =0A
C
EBO
DC Current Gain
h
=--5V, I =--100mA
200
560
FE
C
Gain-Bandwidth Product
Output Capacitance
f
T
=--10V, I =--100mA
C
75
21
MHz
pF
mV
V
Cob
=--10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
V
(sat)
I
I
I
I
I
I
=--1A, I =--100mA
--150
--0.85
--270
--1.2
CE
C
C
C
C
C
B
(sat)
=--1A, I =--100mA
BE
B
V
=--10μA, I =0A
--120
--120
--120
--7
V
(BR)CBO
E
V
=--100μA, R =0Ω
BE
V
(BR)CES
(BR)CEO
(BR)EBO
V
V
=--1mA, R =∞
BE
V
=--10μA, I =0A
V
E
C
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
55
840
40
ns
ns
ns
on
Storage Time
t
stg
Fall Time
t
f
Package Dimensions
unit : mm (typ)
Package Dimensions
unit : mm (typ)
7003-003
7518-003
2.3
6.5
5.0
6.5
2.3
0.5
5.0
4
0.5
4
0.85
0.7
0.5
0.85
1.2
1
2
3
0.6
0.5
0.6
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
1 : Base
2 : Collector
3 : Emitter
4 : Collector
1
2
3
4 : Collector
2.3 2.3
2.3 2.3
SANYO : TP-FA
SANYO : TP
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
I
OUTPUT
B2
INPUT
V
R
R
B
R
L
+
+
50Ω
220μF
=5V
470μF
V
BE
V
CC
= --60V
I = --10I =10I = --0.7A
C B1 B2
No. A1166-2/4
SFT1101
I
-- V
I
-- V
C CE
C
CE
--2.5
--2.0
--1.5
--1.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
--0.5
0
--1mA
I =0mA
B
I =0mA
B
0
--0.1
--0.2
--0.3
--0.4
--0.5
0
--1
--2
--3
--4
--5
Collector-to-Emitter Voltage, V
CE
-- V IT13510
Collector-to-Emitter Voltage, V
CE
-- V IT13511
I
-- V
h
FE
-- I
C
BE
C
1000
--3.0
--2.5
--2.0
--1.5
--1.0
V
CE
= --5V
V
CE
= --5V
7
5
3
2
25°C
100
7
5
3
2
--0.5
0
10
2
3
5
7
2
3
5
7
2
3
5
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--0.01
--0.1
--1.0
Collector Current, I -- A
Base-to-Emitter Voltage, V
BE
-- V
IT13512
IT13513
C
Cob -- V
CB
f
-- I
T
C
3
2
2
V
CE
= --10V
f=1MHz
100
7
5
100
3
2
7
5
10
3
7
2
5
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
--100
--1.0
--10
--0.01
--0.1
--1.0
IT13514
Collector Current, I -- A
Collector-to-Base Voltage, V
CB
-- V
IT13515
C
V
(sat) -- I
C
V
(sat) -- I
CE
BE
C
7
3
2
I
C
/ I =10
B
I
C
/ I =10
B
5
3
2
--1.0
--0.1
7
5
7
5
3
2
3
--0.01
--0.01
2
2
3
5
7
2
3
5
7
--1.0
2
3
5
2
3
5
7
2
3
5
7
2
3
5
--0.01
--0.1
--0.1
--1.0
Collector Current, I -- A
IT13516
Collector Current, I -- A
IT13517
C
C
No. A1166-3/4
SFT1101
A S O
A S O
100ms
7
5
7
5
I
= --4A
I
= --4A
10ms
<10μs
<10μs
CP
CP
I = --2.5A
C
I = --2.5A
C
3
2
3
2
--1.0
--1.0
7
5
7
5
3
2
3
2
--0.1
--0.1
7
5
7
5
3
2
3
2
Tc=25°C
Ta=25°C
Single pulse
Single pulse
--0.01
--0.01
2
3
5 7
--0.1
2
3
5 7
--1.0
2
3
5 7
2
3
5 7
--100
2
3
2
3
5 7
--0.1
2
3
5 7
--1.0
2
3
5 7
--10
2
3
5 7 2 3
--100
--0.01
--10
--0.01
Collector-to-Emitter Voltage, V
-- V IT13566
Collector-to-Emitter Voltage, V
-- V IT13567
CE
CE
P
-- Ta
P
-- Tc
C
C
1.2
16
15
14
1.0
0.8
0.6
0.4
12
10
8
6
4
0.2
0
2
0
0
0
20
40
60
80
100
120
140
160
IT13553
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
Ambient Temperature, Ta -- °C
IT13554
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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This catalog provides information as of July, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1166-4/4
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