SFT1192-59 [SSDI]

2 AMP 500 VOLTS PNP TRANSISTOR; 2安培500伏特PNP晶体管
SFT1192-59
型号: SFT1192-59
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

2 AMP 500 VOLTS PNP TRANSISTOR
2安培500伏特PNP晶体管

晶体 晶体管
文件: 总2页 (文件大小:45K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SFT1192/59  
SOLID STATE DEVICES, INC.  
14830 Valley View Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
2 AMP  
500 VOLTS  
DESIGNER'S DATA SHEET  
PNP TRANSISTOR  
FEATURES:  
• BV  
• Fast Switching.  
400V.  
CEO  
TO-59  
• High Frequency.  
• Low Saturation Voltage.  
• 200oC Operating, Gold Eutectic Die Attach.  
• Designed for Complementary Use with SFT6800.  
SYMBOL  
VALUE  
UNITS  
Volts  
MAXIMUM RATINGS  
Collector-Emitter Voltage  
V
CEO  
400  
500  
R
BE  
= 1 kOhms  
V
CER  
Collector-Base Voltage  
Emitter-Base Voltage  
V
V
500  
10  
Volts  
Volts  
CBO  
EBO  
Collector Current  
Base Current  
I
I
2
Amps  
Amps  
C
0.5  
B
Total Device Dissipation @ T =100oC  
20  
133  
W
mW/oC  
C
P
D
Derate above 25oC  
Operating and Storage Temperature  
T T  
-65 to +200  
7.5  
oC  
J, STG  
Thermal Resistance, Junction to Case  
R
ΘJC  
oC/W  
CASE OUTLINE: TO-59  
Pin Out:  
1 - Collector  
2 - Base  
3 - Emmiter  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0008C  
SFT1192/59  
SOLID STATE DEVICES, INC.  
14830 Valley View Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
ELECTRICAL CHARACTERISTICS  
SYMBOL  
MIN  
MAX  
UNITS  
Collector-Emitter Breakdown Voltage  
(I =5mA  
)
BV  
BV  
400  
500  
-
-
C
DC  
CEO  
V
V
(I =100mA , R =1k)  
C
DC BE  
CER  
Collector-Base Breakdown Voltage  
BV  
500  
-
CBO  
EBO  
(I = 100uA  
)
C
DC  
Emitter-Base Breakdown Voltage  
(I = 20uA  
BV  
10  
-
-
V
)
DC  
E
Collector Cutoff Current  
(V = 450V  
I
1.0  
10  
10  
µA  
µA  
µA  
CBO  
)
DC  
CB  
Collector Cutoff Current  
(V = 400V , V = 1.5V )  
DC  
I
I
-
CEV  
CE  
DC  
EB  
Emitter Cutoff Current  
(V = 6V  
-
EBO  
)
DC  
EB  
DC Current Gain*  
(V =10V  
(I = 1.0mA  
)
)
)
80  
60  
40  
-
-
-
C
DC  
DC  
DC  
)
(I = 50mA  
H
FE  
CE  
DC  
C
(I = 500mA  
C
Collector-Emitter Saturation (I =50mA  
I = 5mA  
)
)
-
-
0.4  
2.0  
C
DC, B  
DC  
V
V
V
CE(SAT)  
DC  
Voltage*  
(I =500mA  
C
I =50mA  
DC, B  
DC  
Base-Emitter Saturation  
Voltage*  
(I =50mA  
I = 5mA  
)
)
-
-
1.5  
2.0  
C
DC, B  
DC  
V
BE (SAT)  
DC  
(I =500mA  
I =50mA  
DC, B  
C
DC  
Current Gain Bandwidth Product  
(I = 70mA = 30V f = 20MHz)  
fT  
50  
-
-
MHz  
pf  
V
C
DC , CE  
DC,  
Output Capacitance  
(V = 20V I = 0A f = 1.0MHz)  
DC,  
C
ob  
75  
CB  
DC ,  
E
Input Capacitance  
(V = 2V I = 0A f = 1.0MHz)  
DC,  
C
ib  
-
300  
pf  
BE  
DC ,  
C
(V = 100V  
I = 500mA  
,
Turn On Time  
Turn Off Time  
CC  
DC ,  
C
DC  
t
-
-
250  
ns  
ns  
(on)  
V
=3.7V  
,
EB(OFF)  
DC  
t
2500  
I =I = 50mA  
B1 B2  
)
(off)  
DC  
*Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%  

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