SFT1192S.5 [SSDI]
PNP TRANSISTOR; PNP晶体管
| 型号： | SFT1192S.5 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | PNP TRANSISTOR |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT1192S.5
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
2 AMP
500 VOLTS
DESIGNER’S DATA SHEET
PNP TRANSISTOR
FEATURES:
·
·
·
·
·
·
BVCEO 400 V minimum
SMD.5
Fast Switching: 250 ns max t(on)
High Frequency: minimum 50 MHz
Low Saturation Voltage
200oC Operating, Gold Eutectic Die Attach
Designed for Complementary Use with SFT6800
MAXIMUM RATINGS
Symbol
VCEO
Value
400
Units
Volts
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
VCBO
VCEO
IC
500
10
2
Volts
Volts
Amps
Amps
IB
Base Current
0.5
Total Device Dissipation @ TC = 175oC
5
200
W
mW/ºC
PD
Derate above 175oC
TJ & TSTG
RqJC
Operating and Storage Temperature Range
Thermal Resistance, Junction to Case
-65 to +200
5.0
ºC
ºC/W
FIGURE 1: OUTLINE AND DIMENSIONS
.304
.288
.020
.010
.103
.087
3x
.030 MIN
2x
All dimensions are in inches
Tolerances: (unless
otherwise specified)
XX: ±0.01”
.128
.112
XXX: ±0.005”
.030 MIN
.408
.392
PACKAGE OUTLINE:
SMD.5
PINOUT:
.233
.217
Pin 1: Collector
Pin 2: Emitter
Pin 3: Base
2x .010
MAX
.304
.288
.135
.115
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0082A
DOC
SFT1192S.5
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Symbol
BVCEO
BVCBO
BVEBO
ICBO
Min Max Units
Collector – Emitter Breakdown Voltage
(IC = 5 mA)
Collector – Base Breakdown Voltage
(IC = 100 mADC
Emitter – Base Breakdown Voltage
(IE = 20 mADC)
Collector Cutoff Current
(VCB = 450 VDC)
Collector Cutoff Current
(VCE = 400 VDC, VEB = 1.5 VDC)
––
––
400
500
10
––
V
V
––
V
1.0
10
10
mA
mA
mA
––
ICEV
Emitter Cutoff Current
(VEB = 6 VDC)
––
IEBO
(IC = 1.0 mADC)
(IC = 50 mADC)
(IC = 500 mADC)
80
60
40
––
––
––
DC Current Gain*
(VCE = 10 VDC)
HFE
Collector – Emitter Saturation Voltage*
(IC = 50 mADC, IB = 5 mADC)
(IC = 500 mADC, IB = 50 mADC)
Base – Emitter Saturation Voltage*
(IC = 50 mADC, IB = 5 mADC)
(IC = 500 mADC, IB = 50 mADC)
0.4
1.0
––
VCE (SAT)
VDC
VDC
1.5
2.0
––
VBE (SAT)
Current Gain Bandwidth Product
(IC = 70 mADC, VCE = 30 VDC , f = 20 MHz)
Output Capacitance
(VCB = 20 VDC, IE = 0 ADC , f = 1.0 MHz)
Input Capacitance
––
75
fT
50
––
––
––
––
MHz
pf
Cob
Cib
t(on)
t(off)
300
250
2500
pf
(VEB = 2 VDC, Ic = 0 ADC , f = 1.0 MHz)
Turn On Time
Turn Off Time
ns
ns
(VCC = 100 VDC, IC = 500 mADC
VEB(OFF) = 3.7 VDC
IB1 = IB2 = 50 mADC
,
* Pulse Test: Pulse Width = 300 msec, Duty Cycle = 2%
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0082A
DOC
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