SMBT3906U [INFINEON]
PNP Silicon Switching Transistor Array; PNP硅开关晶体管阵列
| 型号： | SMBT3906U |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon Switching Transistor Array |
| 文件： | 总8页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBT3906U
PNP Silicon Switching Transistor Array
4
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with good matching in one package
5
6
3
2
1
Complementary type: SMBT3904U (NPN)
VPW09197
C1
6
B2
5
E2
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07175
Type
Marking
Pin Configuration
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
Package
SMBT3906U
s2A
SC74
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
40
40
V
V
V
V
CEO
CBO
EBO
5
200
mA
mW
°C
I
C
330
Total power dissipation, T = 105 °C
P
tot
S
Junction temperature
Storage temperature
150
T
j
-65 ... 150
T
stg
Thermal Resistance
1)
Junction - soldering point
R
135
K/W
thJS
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1
Nov-30-2001
SMBT3906U
Electrical Characteristics at T =25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
40
40
5
DC Characteristics
Collector-emitter breakdown voltage
-
-
-
-
-
-
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I = 1 mA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
-
E
C
Collector cutoff current
= 30 V, I = 0
-
50
nA
I
CBO
V
CB
E
DC current gain 1)
I = 100 µA, V = 1 V
-
h
FE
60
80
-
-
-
-
-
-
C
CE
I = 1 mA, V = 1 V
-
C
CE
I = 10 mA, V = 1 V
100
60
300
C
CE
I = 50 mA, V = 1 V
-
-
C
CE
I = 100 mA, V = 1 V
30
C
CE
Collector-emitter saturation voltage1)
I = 10 mA, I = 1 mA
V
V
CEsat
-
-
-
-
0.25
0.4
C
B
I = 50 mA, I = 5 mA
C
B
Base-emitter saturation voltage 1)
I = 10 mA, I = 1 mA
V
BEsat
0.65
-
-
-
0.85
0.95
C
B
I = 50 mA, I = 5 mA
C
B
1) Pulse test: t < 300 s; D < 2%
2
Nov-30-2001
SMBT3906U
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
Transition frequency
250
-
-
-
-
-
-
-
-
-
MHz
f
T
I = 10 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
-
-
4.5 pF
10
C
cb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
C
eb
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz
2
12
10
400
60
4
h
k
11e
C
CE
-4
Open-circuit reverse voltage transf.ratio
I = 2 mA, V = 5 V, f = 1 kHz
0.1
100
3
10
-
h
12e
C
CE
Short-circuit forward current transf.ratio
I = 2 mA, V = 5 V, f = 1 kHz
h
21e
C
CE
Open-circuit output admittance
h
S
22e
I = 2 mA, V = 5 V, f = 1 kHz
C
CE
Noise figure
-
dB
F
I = 100 µA, V = 5 V, R = 1 k ,
C
CE
S
f = 1 kHz, f = 200 Hz
Delay time
-
-
-
-
35
35
ns
t
d
V
V
= 3 V, I = 10 mA, I = 1 mA,
CC
C
B1
= 0.5 V
BE(off)
Rise time
t
r
V
V
= 3 V, I = 10 mA, I = 1 mA,
CC
C
B1
= 0.5 V
BE(off)
Storage time
= 3 V, I = 10 mA, I =I = 1mA
-
-
-
-
225
75
t
stg
V
CC
C
B1 B2
Fall time
= 3 V, I = 10 mA, I =I = 1mA
t
f
V
CC
C
B1 B2
3
Nov-30-2001
SMBT3906U
Test circuit
Delay and rise time
-3.0 V
275 Ω
<1.0 ns
+0.5 V
10 kΩ
0
C
<4.0 pF
-10.6 V
D = 2%
300 ns
EHN00059
Storage time and fall time
-3.0 V
<1.0 ns
275 Ω
+9.1 V
10 kΩ
0
C
<4.0 pF
-10.9 V
10 <t1< 500 µs
1N916
t1
D = 2%
EHN00060
4
Nov-30-2001
SMBT3906U
Total power dissipation P = f (T )
tot
S
400
mW
300
250
200
150
100
50
0
°C
0
20
40
60
80
100 120
150
T
S
Permissible Pulse Load
Permissible Pulse Load R
= f (t )
thJS
p
P
/ P
= f (t )
totmax
totDC
p
10 2
10 3
K/W
D=0
0.005
0.01
0.02
0.05
0.1
10 2
0.2
0.5
10 1
D=0.5
0.2
10 1
0.1
0.05
0.02
0.01
0.005
0
10 0
10 0
10 -6
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
5
Nov-30-2001
SMBT3906U
DC current gain h = f (I )
Saturation voltage I = f (V
, V
)
FE
C
C
BEsat CEsat
V
= 10V, normalized
h
= 10
FE
CE
EHP00767
EHP00774
101
5
2
mA
102
Ι C
h FE
5
125 C
25 C
VBE
VCE
100
5
101
5
-55 C
100
0
10-1
10 -1
10 0
5 10 1
mA 10 2
Ι C
0.2
0.4
0.6
0.8
1.0 V 1.2
5
VBE sat ,VCE sat
Short-circuit forward current
transfer ratio h = f(I )
Open-circuit output admittance
h
= f (I )
21e
C
22e
C
V
= 10V, f = 1MHz
V
= 10V, f = 1MHz
CE
CE
EHP00771
EHP00770
102
µs
103
5
5
h22e
h21e
101
5
102
5
101
100
10 -1
5
10 0
mA
Ι C
5
10 1
10 -1
5
10 0
mA
Ι C
5
10 1
6
Nov-30-2001
SMBT3906U
Delay time t = f (I )
Storage time t = f(I )
stg C
d
C
Rise time t = f (I )
r
C
EHP00762
EHP00772
103
ns
103
ns
ts
25 C
125 C
t r
t d
tr
t
d
,
hFE= 20
hFE = 10
10
102
101
100
102
101
100
V
CC = 3 V
hFE= 20
10
15 V
40 V
V
BE= 2 V
0 V
10 0
5
10 1
5 10 2 mA 5 10 3
10 0
5 10 1
5 10 2
mA 10 3
Ι C
Ι C
Fall time t = f (I )
Rise time t = f (I )
r C
f
C
EHP00764
EHP00773
103
ns
103
ns
25 C
125 C
tr
t f
25 C
125 C
VCC = 40 V
hFE = 10
VCC = 40 V
hFE = 20
102
101
100
102
101
100
hFE = 10
10 0
5
10 1
5 10 2 mA 5 10 3
10 0
5
10 1
5 10 2
mA 10 3
Ι C
Ι C
7
Nov-30-2001
SMBT3906U
Input impedance
Open-circuit reverse voltage
transfer ratio h = f (I )
h
= f (I )
11e
C
12e
C
V
= 10V, f = 1kHz
V
= 10V, f = 1kHz
CE
CE
10-3
EHP00768
EHP00769
102
kΩ
h12e
h11e
5
101
5
10-4
100
5
5
10-1
10-5
10-1
5
100
mA
Ι C
101
10 -1
5
10 0
mA 10 1
Ι C
8
Nov-30-2001
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