SMBT3906U-E6327 [INFINEON]
Transistor;
Infineon 
SMBT3906...MMBT3906
PNP Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA
• Low colltector-emitter saturation voltage
• For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor
with good matching in one package
• Complementary types:
SMBT3904...MMBT3904 (NPN)
• SMBT3904S / U: for orientation in reel
see package information below
SMBT3906S/U
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07175
Type
Marking
s2A
2A
Pin Configuration
Package
SOT23
TSLP-3-4
SMBT3906/ MMBT3906
SMBT3906L3
1=B 2=E 3=C
1=B 2=E 3=C
-
-
-
-
-
-
SMBT3906S
SMBT3906U
s2A
s2A
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Symbol
Value
40
40
6
200
Unit
V
V
V
V
CEO
CBO
EBO
mA
I
C
K/W
Total power dissipation-
P
tot
T ≤ 71 °C
330
250
250
330
S
T ≤ tbd °C
S
T ≤ 115 °C
S
T ≤ 105 °C
S
150
°C
Junction temperature
Storage temperature
T
T
j
-65 ... 150
2006-07-11
1
SMBT3906...MMBT3906
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
Unit
K/W
1)
R
thJS
SMBT3906/ MMBT3906
SMBT3906L3
SMBT3906S
≤ 240
≤ tbd
≤ 140
≤ 135
SMBT3906U
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
40
-
-
-
-
-
-
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
I = 1 mA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
40
6
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
-
E
C
Collector-base cutoff current
I
-
50
nA
-
V
= 30 V, I = 0
CB
E
2)
DC current gain
h
FE
I = 100 µA, V = 1 V
60
80
100
60
-
-
-
-
-
-
-
C
CE
I = 1 mA, V = 1 V
C
CE
I = 10 mA, V = 1 V
300
-
-
C
CE
I = 50 mA, V = 1 V
C
CE
I = 100 mA, V = 1 V
30
C
CE
2)
Collector-emitter saturation voltage
I = 10 mA, I = 1 mA
V
V
V
CEsat
BEsat
-
-
-
-
0.25
0.4
C
B
I = 50 mA, I = 5 mA
C
B
2)
Base emitter saturation voltage
I = 10 mA, I = 1 mA
0.65
-
-
-
0.85
0.95
C
B
I = 50 mA, I = 5 mA
C
B
1
2
For calculation of RthJA please refer to Application Note Thermal Resistance
Pulse test: t < 300µs; D < 2%
2006-07-11
2
SMBT3906...MMBT3906
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
250
-
-
-
-
MHz
Transition frequency
f
T
I = 10 mA, V = 20 V, f = 100 MHz
C
CE
-
-
3.5 pF
10
Collector-base capacitance
= 5 V, f = 1 MHz
C
C
cb
eb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Delay time
t
-
-
-
-
35
35
ns
d
V
V
= 3 V, I = 10 mA, IB1 = 1 mA,
CC
C
= 0.5 V
BE(off)
Rise time
t
r
V
V
= 3 V, I = 10 mA, IB1 = 1 mA,
CC
C
= 0.5 V
BE(off)
Storage time
= 3 V, I = 10 mA, I = I = 1 mA
t
-
-
-
-
-
-
225
75
4
stg
V
CC
C
B1
B2
Fall time
= 3 V, I = 10 mA, I = I = 1 mA
t
f
V
CC
C
B1
B2
dB
Noise figure
I = 100 µA, V = 5 V, f = 1 kHz,
F
C
CE
∆ f = 200 Hz, R = 1 kΩ
S
2006-07-11
3
SMBT3906...MMBT3906
Test circuit
Delay and rise time
-3.0 V
275 Ω
<1.0 ns
+0.5 V
10 kΩ
0
C
<4.0 pF
-10.6 V
D = 2%
300 ns
EHN00059
Storage and fall time
-3.0 V
<1.0 ns
275 Ω
+9.1 V
0
10 kΩ
C
<4.0 pF
-10.9 V
10 <t1< 500 µs
D = 2%
1N916
t 1
EHN00060
2006-07-11
4
SMBT3906...MMBT3906
DC current gain h = ƒ(I )
Saturation voltage I = ƒ(V
; V
)
CEsat
FE
C
C
BEsat
V
= 1 V
h
= 10
CE
FE
EHP00767
EHP00774
101
5
2
mA
102
Ι C
h FE
5
125 C
25 C
VBE
VCE
100
5
101
5
-55 C
100
0
10-1
10 -1
5 10 0
5 10 1
mA 10 2
Ι C
0.2
0.4
0.6
0.8
1.0 V 1.2
VBE sat ,VCE sat
Collector-base capacitance C = ƒ(V
)
Total power dissipation P = ƒ(T )
tot S
cb
CB
Emitter-base capacitance C = ƒ(V )
SMBT3906/ MMBT3906
eb
EB
360
mW
8
pF
7
300
270
240
210
180
150
120
90
6.5
6
5.5
5
4.5
4
3.5
3
CEB
2.5
2
60
30
1.5
1
CCB
22
0
V
0
4
8
12
16
0
15 30 45 60 75 90 105 120
150
°C
T
S
C
/C
CB EB
2006-07-11
5
SMBT3906...MMBT3906
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
SMBT3906S
SMBT3906U
300
mW
360
mW
250
225
200
175
150
125
100
75
300
270
240
210
180
150
120
90
50
60
25
30
0
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Permissible Pulse Load
Permissible Puls Load R
= ƒ (t )
thJS p
P
/P
= ƒ(t )
SMBT3906S
totmax totDC
p
10 3
K/W
EHP00936
103
Ptotmax
PtotDC
t p
5
t p
T
D
=
T
10 2
10 1
10 0
10 -1
102
5
D
0
=
0.005
0.01
0.02
0.05
0.1
0.5
0.2
0.2
0.5
0.1
101
5
0.05
0.02
0.01
0.005
D = 0
100
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10-6 10-5 10-4 10-3 10-2
s
100
s
t
p
t p
2006-07-11
6
SMBT3906...MMBT3906
Permissible Pulse Load
/P = ƒ(t )
Permissible Puls Load R
SMBT3906U
= ƒ (t )
thJS
p
P
totmax totDC
p
SMBT3906S
10 3
10 3
K/W
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 2
0.2
D=0.5
0.5
0.2
0.1
10 1
10 1
0.05
0.02
0.01
0.005
0
10 0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Permissible Pulse Load
/P = ƒ(t )
Delay time t = ƒ(I )
d C
P
Rise time t = ƒ(I )
totmax totDC
p
r C
SMBT3906U
10 2
EHP00772
103
ns
t r
t d
D=0
tr
t
d
,
hFE = 10
0.005
0.01
0.02
0.05
0.1
102
101
100
V
CC = 3 V
0.2
10 1
0.5
15 V
40 V
V
BE= 2 V
0 V
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 0
5
10 1
5
10 2 mA
5
10 3
s
t
p
Ι C
2006-07-11
7
SMBT3906...MMBT3906
Storage time t = ƒ(I )
Fall time t = ƒ(I )
f C
stg
C
EHP00762
EHP00773
103
ns
103
ns
25 C
125 C
ts
25 C
t f
hFE= 20
10
125 C
VCC = 40 V
102
101
100
102
101
100
hFE = 20
hFE= 20
10
hFE = 10
10 0
5
10 1
5 10 2 mA 5 10 3
10 0
5 10 1
5 10 2
mA 10 3
Ι C
Ι C
Rise time t = ƒ(I )
r
C
EHP00764
103
ns
tr
25 C
125 C
VCC = 40 V
hFE = 10
102
101
100
10 0
5 10 1
5 10 2
mA 10 3
Ι C
2006-07-11
8
Package SC74
SMBT3906...MMBT3906
Package Outline
±0.2
2.9
B
1.1 MAX.
(2.25)
+0.1
-0.06
0.15
(0.35)
6
1
5
2
4
3
+0.1
-0.05
A
0.35
0.95
M
0.2
B 6x
Pin 1
marking
0.1 MAX.
M
0.2
A
1.9
Foot Print
0.5
0.95
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCW66H
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
3.15
1.15
Pin 1
marking
2006-07-11
9
Package SOT23
SMBT3906...MMBT3906
Package Outline
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2006-07-11
10
Package SOT363
SMBT3906...MMBT3906
Package Outline
±0.2
2
±0.1
0.9
+0.1
-0.05
6x
0.2
0.1 MAX.
0.1
M
0.1
A
6
1
5
4
3
2
Pin 1
marking
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
1.1
2.15
Pin 1
marking
2006-07-11
11
Package TSLP-3-4
SMBT3906...MMBT3906
Package Outline
Top view
Bottom view
0.4+0.1
±0.05
0.6
1)
0.05 MAX.
±0.035
0.5
3
2
3
1
1
2
±0.05
0.35
Pin 1
marking
1)
±0.035
2x0.15
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.6
0.5
R0.19
R0.1
0.2
0.2
0.17
0.225
0.225
0.15
Copper
Solder mask
Stencil apertures
Marking Layout (Example)
BCR133L3
Type code
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
0.5
4
0.76
Pin 1
marking
2006-07-11
12
SMBT3906...MMBT3906
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2006-07-11
13
相关型号：
SMBT3906UE6327HTSA1
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, SC-74, 6 PIN
INFINEON
SMBT3906_08
High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage
INFINEON
SMBT4126E6327
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
©2020 ICPDF网 联系我们和版权申明