SMMBT6427LT1G [ONSEMI]
NPN 双极达林顿晶体管;
| 型号： | SMMBT6427LT1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极达林顿晶体管 光电二极管 小信号双极晶体管 达林顿晶体管 |
| 文件： | 总6页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT6427LT1
Preferred Device
Darlington Transistor
NPN Silicon
Features
• Pb−Free Package is Available
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MAXIMUM RATINGS
COLLECTOR 3
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
40
Unit
Vdc
BASE
1
V
CEO
V
CBO
V
EBO
40
Vdc
12
Vdc
EMITTER 2
Collector Current − Continuous
I
500
mAdc
C
THERMAL CHARACTERISTICS
3
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
1
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
2
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556
°C/W
Total Device Dissipation Alumina Substrate,
P
SOT−23 (TO−236)
CASE 318
D
(Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
STYLE 6
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
T , T
J
−55 to +150
MARKING DIAGRAM
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1V M G
G
1
1V = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT6427LT1
SOT−23 3,000 / Tape & Reel
MMBT6427LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 2
MMBT6427LT1/D
MMBT6427LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 10 mAdc, V = 0)
40
40
12
−
−
−
C
BE
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
Vdc
(I = 10 mAdc, I = 0)
−
C
C
Collector Cutoff Current
I
mAdc
nAdc
nAdc
CES
CBO
(V = 25 Vdc, I = 0)
1.0
50
50
CE
B
Collector Cutoff Current
I
(V = 30 Vdc, I = 0)
−
CB
E
Emitter Cutoff Current
I
EBO
(V = 10 Vdc, I = 0)
−
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 10 mAdc, V = 5.0 Vdc)
10,000
20,000
14,000
100,000
200,000
140,000
C
CE
CE
CE
(I = 100 mAdc, V = 5.0 Vdc)
C
(I = 500 mAdc, V = 5.0 Vdc)
C
(3)
CE(sat)
Collector−Emitter Saturation Voltage
(I = 50 mAdc, I = 0.5 mAdc)
V
Vdc
−
−
1.2
1.5
C
B
(I = 500 mAdc, I = 0.5 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 500 mAdc, I = 0.5 mAdc)
V
Vdc
Vdc
BE(sat)
−
−
2.0
C
B
Base−Emitter On Voltage
(I = 50 mAdc, V = 5.0 Vdc)
V
BE(on)
1.75
C
CE
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
C
pF
pF
obo
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB
−
−
7.0
15
−
E
Input Capacitance
C
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
EB
C
CurrentGain − High Frequency
(I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz)
|h |
Vdc
dB
fe
1.3
−
C
CE
Noise Figure
(I = 1.0 mAdc, V = 5.0 Vdc, R = 100 kW, f = 1.0 kHz)
NF
10
C
CE
S
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
MMBT6427LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500
2.0
BANDWIDTH = 1.0 Hz
R ≈ 0
BANDWIDTH = 1.0 Hz
S
1.0
0.7
0.5
200
100
50
I
C
= 1.0 mA
0.3
0.2
10 mA
100 mA
100 mA
10 mA
0.1
0.07
0.05
20
I
C
= 1.0 mA
10
0.03
0.02
5.0
10 20
50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
10 20
50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
Figure 3. Noise Current
200
14
12
BANDWIDTH = 10 Hz TO 15.7 kHz
BANDWIDTH = 10 Hz TO 15.7 kHz
= 10 mA
100
70
10
8.0
6.0
4.0
2.0
0
I
C
10 mA
50
100 mA
100 mA
30
20
I
= 1.0 mA
C
1.0 mA
10
1.0 2.0
5.0
10
20
50 100 200
500 1000
1.0 2.0
5.0
10
20
50 100 200
500 1000
R , SOURCE RESISTANCE (kW)
S
R , SOURCE RESISTANCE (kW)
S
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
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3
MMBT6427LT1
SMALL−SIGNAL CHARACTERISTICS
20
10
4.0
V
= 5.0 V
CE
f = 100 MHz
T = 25°C
J
T = 25°C
J
2.0
7.0
5.0
C
ibo
1.0
0.8
C
obo
0.6
0.4
3.0
2.0
0.2
0.04
0.1 0.2
0.4
1.0 2.0 4.0
10 20
40
0.5 1.0
2.0
0.5 10 20
50
100 200
500
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 6. Capacitance
Figure 7. High Frequency Current Gain
200ꢀk
3.0
2.5
2.0
1.5
1.0
0.5
T = 125°C
J
T = 25°C
J
100ꢀk
70ꢀk
50ꢀk
I
C
=
50 mA
250 mA 500 mA
10 mA
25°C
30ꢀk
20ꢀk
10ꢀk
7.0ꢀk
5.0ꢀk
−ꢁ55°C
V
= 5.0 V
CE
3.0ꢀk
2.0ꢀk
500
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
5.0 7.0 10
20 30
50 70 100
200 300
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
1.6
1.4
−ꢁ1.0
−ꢁ2.0
−ꢁ3.0
−ꢁ4.0
−ꢁ5.0
−ꢁ6.0
*APPLIES FOR I /I ≤ h /3.0
C B
FE
25°C TO 125°C
T = 25°C
J
*R
FOR V
CE(sat)
q
VC
V
@ I /I = 1000
−ꢁ55°C TO 25°C
25°C TO 125°C
BE(sat)
C B
1.2
1.0
0.8
0.6
V
@ V = 5.0 V
CE
BE(on)
q
FOR V
BE
VB
−ꢁ55°C TO 25°C
V
@ I /I = 1000
C B
CE(sat)
5.0 7.0
10
20 30
50 70 100 200 300
500
5.0 7.0 10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
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4
MMBT6427LT1
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
0.1
0.1
0.07
SINGLE PULSE
0.05
0.03
0.02
Z
Z
= r(t) • R ꢂT
− T = P
Z
q
q
q
q
JC(t)
JC
J(pk)
C
(pk) JC(t)
= r(t) • R ꢂT
− T = P
Z
q
q
JA
JA(t)
J(pk)
A
(pk) JA(t)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢀk
2.0ꢀk
5.0ꢀk 10ꢀk
t, TIME (ms)
Figure 12. Thermal Response
FIGURE A
t
P
P
P
P
P
t
1
1/f
DUTYꢀCYCLE + t ꢀf +
t
1
1
t
P
PEAK PULSE POWER = P
P
Design Note: Use of Transient Thermal Resistance Data
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5
MMBT6427LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
b
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
E
2.10
2.40
2.64
0.083
0.094
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT6427LT1/D
相关型号：
SMMBTA06LT1
500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
ONSEMI
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