SMUN5113DW1T1G [ONSEMI]
双 PNP 双极数字晶体管 (BRT);
| 型号： | SMUN5113DW1T1G |
| 厂家： | 
ONSEMI |
| 描述： | 双 PNP 双极数字晶体管 (BRT) 开关 光电二极管 小信号双极晶体管 数字晶体管 |
| 文件： | 总20页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
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The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor
and a base−emitter resistor. These digital transistors are designed to
replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single
device. In the MUN5111DW1T1 series, two BRT devices are housed in
the SOT−363 package which is ideal for low−power surface mount
applications where board space is at a premium.
(3)
(2)
(1)
R
1
R
2
Q
1
Q
2
R
2
R
1
Features
(4)
(5)
(6)
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb−Free Packages are Available
1
MAXIMUM RATINGS
(T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
SOT−363
CASE 419B
STYLE 1
Rating
Symbol
Value
−50
−50
−100
Unit
Vdc
Collector-Base Voltage
V
CBO
Collector-Emitter Voltage
Collector Current
V
Vdc
CEO
I
mAdc
C
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Characteristic
(One Junction Heated)
Symbol
Max
Unit
6
Total Device Dissipation
T = 25°C
A
P
187 (Note 1)
256 (Note 2)
mW
D
xx M G
1.5 (Note 1) mW/°C
2.0 (Note 2)
Derate above 25°C
G
1
Thermal Resistance,
Junction-to-Ambient
R
q
JA
670 (Note 1) °C/W
490 (Note 2)
Characteristic
(Both Junctions Heated)
xx = Device Code (Refer to page 2)
Symbol
Max
Unit
M
= Date Code
Total Device Dissipation
P
250 (Note 1)
385 (Note 2)
2.0 (Note 1) mW/°C
3.0 (Note 2)
mW
D
G
= Pb−Free Package
T = 25°C
A
(Note: Microdot may be in either location)
Derate above 25°C
ORDERING INFORMATION
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
Thermal Resistance,
Junction-to-Ambient
R
q
JA
493 (Note 1) °C/W
325 (Note 2)
Thermal Resistance,
Junction-to-Lead
R
q
JL
188 (Note 1) °C/W
208 (Note 2)
DEVICE MARKING INFORMATION
Junction and Storage Temperature Range T , T
−55 to +150
°C
See specific marking information in the device marking table
on page 2 of this data sheet.
J
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Preferred devices are recommended choices for future use
and best overall value.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
September, 2005 − Rev. 6
MUN5111DW1T1/D
MUN5111DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
†
Device
MUN5111DW1T1
MUN5111DW1T1G
Package
Marking
0A
R1 (K)
10
R2 (K)
10
Shipping
SOT−363
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
0A
10
10
MUN5112DW1T1
MUN5112DW1T1G
SOT−363
0B
0B
22
22
22
22
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
MUN5113DW1T1
MUN5113DW1T1G
SOT−363
0C
0C
47
47
47
47
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
MUN5114DW1T1
MUN5114DW1T1G
SOT−363
0D
0D
10
10
47
47
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
MUN5115DW1T1
MUN5115DW1T1G
SOT−363
0E
0E
10
10
∞
∞
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
MUN5116DW1T1
MUN5116DW1T1G
SOT−363
0F
0F
4.7
4.7
∞
∞
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
MUN5130DW1T1
MUN5130DW1T1G
SOT−363
0G
0G
1.0
1.0
1.0
1.0
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
MUN5131DW1T1
MUN5131DW1T1G
SOT−363
0H
0H
2.2
2.2
2.2
2.2
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
MUN5132DW1T1
MUN5132DW1T1G
SOT−363
0J
0J
4.7
4.7
4.7
4.7
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
MUN5133DW1T1
MUN5133DW1T1G
SOT−363
0K
0K
4.7
4.7
47
47
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
MUN5134DW1T1
MUN5134DW1T1G
SOT−363
0L
0L
22
22
47
47
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
MUN5135DW1T1
MUN5135DW1T1G
SOT−363
0M
0M
2.2
2.2
47
47
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
MUN5136DW1T1
MUN5136DW1T1G
SOT−363
0N
0N
100
100
100
100
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
MUN5137DW1T1
MUN5137DW1T1G
SOT−363
0P
0P
47
47
22
22
3000/Tape & Reel
3000/Tape & Reel
SOT−363
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MUN5111DW1T1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = −50 V, I = 0)
I
I
−
−
−
−
−100
−500
nAdc
nAdc
mAdc
CB
E
CBO
CEO
Collector-Emitter Cutoff Current (V = −50 V, I = 0)
CE
B
Emitter-Base Cutoff Current
(V = −6.0 V, I = 0)
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.18
−0.13
−0.2
−0.05
−0.13
EBO
EB
C
Collector-Base Breakdown Voltage (I = −10 mA, I = 0)
V
V
−50
−50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown Voltage (Note 3) (I = −2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 3)
Collector-Emitter Saturation Voltage (I = −10 mA, I = −0.3 mA)
V
CE(sat)
−
−
−0.25
Vdc
C
E
(I = −10 mA, I = −5 mA)
MUN5130DW1T1/MUN5131DW1T1
MUN5115DW1T1/MUN5116DW1T1
C
B
(I = −10 mA, I = −1 mA)
C
B
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
DC Current Gain
(V = −10 V, I = −5.0 mA)
CE
MUN5111DW1T1
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
100
140
140
250
250
5.0
C
80
160
160
3.0
8.0
15
80
80
80
80
15
27
140
130
140
130
140
80
Output Voltage (on)
(V = −5.0 V, V = −2.5 V, R = 1.0 kW)
V
Vdc
OL
MUN5111DW1T1
MUN5112DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5113DW1T1
MUN5136DW1T1
MUN5137DW1T1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
CC
B
L
(V = −5.0 V, V = −3.5 V, R = 1.0 kW)
CC
B
L
(V = −5.0 V, V = −5.5 V, R = 1.0 kW)
CC
B
L
(V = −5.0 V, V = −4.0 V, R = 1.0 kW)
CC
B
L
Output Voltage (off) (V = −5.0 V, V = −0.5 V, R = 1.0 kW)
V
−4.9
−
−
Vdc
CC
B
L
OH
(V = −5.0 V, V = −0.05 V, R = 1.0 kW)
MUN5130DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5131DW1T1
MUN5133DW1T1
CC
B
L
(V = −5.0 V, V = −0.25 V, R = 1.0 kW)
CC
B
L
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
MUN5111DW1T1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q ) (Continued)
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4) (Continued)
Input Resistor
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
k W
15.4
1.54
70
28.6
2.86
130
61.1
32.9
Resistor Ratio
MUN5111DW1T1/MUN5112DW1T1/
MUN5113DW1T1/MUN5136DW1T1
MUN5114DW1T1
R /R
1 2
0.8
0.17
−
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
MUN5115DW1T1/MUN5116DW1T1
MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1
MUN5133DW1T1
0.8
1.2
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
MUN5134DW1T1
MUN5135DW1T1
MUN5137DW1T1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ALL MUN5111DW1T1 SERIES DEVICES
300
250
200
150
100
R
q
JA
= 490°C/W
50
0
−50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve − ALL DEVICES
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4
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1
1
1000
V
= 10 V
CE
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
ꢀ0.1
100
−25°C
25°C
75°C
ꢀ0.01
10
ꢀ20
0
ꢀ40
1
10
100
50
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
1
25°C
75°C
f = 1 MHz
l = 0 V
E
T ꢁ=ꢁ−25°C
A
T = 25°C
A
2
1
ꢀ0.1
ꢀ0.01
V
= 5 V
O
0
0
ꢀ0.001
10
20
30
40
50
0
1
ꢀ2
3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
ꢀ9
10
V , INPUT VOLTAGE (VOLTS)
in
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
100
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
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5
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1
1000
10
V
= 10 V
CE
I /I = 10
C B
T ꢁ=ꢁ75°C
A
1
25°C
25°C
T ꢁ=ꢁ−25°C
A
−25°C
100
75°C
ꢀ0.1
10
0.01
1
10
I , COLLECTOR CURRENT (mA)
0
ꢀ20
ꢀ40
ꢀ50
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
100
25°C
75°C
f = 1 MHz
l = 0 V
T ꢁ=ꢁ−25°C
A
E
10
1
T = 25°C
A
ꢀ0.1
1
0
ꢀ0.01
V
= 5 V
ꢀ9
O
ꢀ0.001
0
1
ꢀ2
ꢀ3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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6
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113DW1T1
1
1000
V
= 10 V
I /I = 10
C B
CE
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
25°C
75°C
−25°C
100
ꢀ0.1
ꢀ0.01
10
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
25°C
−25°C
T ꢁ=ꢁ75°C
A
f = 1 MHz
l = 0 V
E
0.8
10
1
T = 25°C
A
0.6
0.4
ꢀ0.1
ꢀ0.01
0.2
0
V
= 5 V
ꢀ5
O
ꢀ0.001
0
10
20
30
40
50
0
1
2
3
ꢀ4
ꢀ6
ꢀ7
ꢀ8
ꢁ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
25°C
75°C
10
1
ꢁ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
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7
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114DW1T1
1
180
T ꢁ=ꢁ75°C
A
I /I = 10
C B
V
= 10 V
CE
160
140
120
100
80
T ꢁ=ꢁ−25°C
A
25°C
−25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4.5
4
100
10
1
T ꢁ=ꢁ75°C
f = 1 MHz
l = 0 V
A
25°C
E
3.5
3
T = 25°C
A
−25°C
2.5
2
1.5
1
V
= 5 V
O
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V
= 0.2 V
25°C
O
T ꢁ=ꢁ−25°C
A
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
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8
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5115DW1T1
1
1000
V
= 10 V
CE
I /I = 10
C B
75°C
T = −25°C
A
75°C
100
0.1
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
12
10
100
10
1
75°C
f = 1 MHz
l = 0 V
E
T = 25°C
A
25°C
8
6
4
2
T = −25°C
A
0.1
0.01
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
10
V
= 0.2 V
O
T = −25°C
A
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 26. Input Voltage versus Output Current
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9
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5116DW1T1
1
1000
V
= 10 V
CE
I /I = 10
C B
75°C
T = −25°C
A
75°C
100
0.1
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
12
10
100
10
1
75°C
f = 1 MHz
l = 0 V
E
T = 25°C
A
25°C
8
6
4
2
T = −25°C
A
0.1
0.01
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
= 0.2 V
O
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 31. Input Voltage versus Output Current
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10
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5130DW1T1
1
1000
V
= 10 V
CE
I /I = 10
C B
75°C
100
0.1
−25°C
25°C
75°C
0.01
10
1
25°C
T = −25°C
A
0.001
0
5
10
15
20
25
30
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
100
10
1
75°C
25°C
TBD
T = −25°C
A
0.1
0.01
V
= 5 V
O
0.001
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
10
T = −25°C
A
1
75°C
25°C
V
= 0.2 V
O
0.1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 36. Input Voltage versus Output Current
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11
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5131DW1T1
1
1000
V
= 10 V
CE
I /I = 10
C B
75°C
100
0.1
−25°C
75°C
25°C
25°C
0.01
10
1
T = −25°C
A
0.001
0
5
10
15
20
25
30
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 37. VCE(sat) versus IC
Figure 38. DC Current Gain
12
10
8
100
10
1
f = 1 MHz
l = 0 V
E
75°C
T = 25°C
A
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
10
T = −25°C
A
1
75°C
25°C
V
= 0.2 V
O
0.1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 41. Input Voltage versus Output Current
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12
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132DW1T1
1
1000
V
= 10 V
CE
I /I = 10
C B
75°C
75°C
100
0.1
−25°C
25°C
25°C
0.01
10
1
T = −25°C
A
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 42. VCE(sat) versus IC
Figure 43. DC Current Gain
12
100
10
1
75°C
f = 1 MHz
l = 0 V
10
8
E
T = 25°C
A
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 44. Output Capacitance
Figure 45. Output Current versus Input Voltage
10
T = −25°C
A
25°C
1
75°C
V
= 0.2 V
O
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 46. Input Voltage versus Output Current
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13
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133DW1T1
1
1000
V
= 10 V
CE
I /I = 10
C B
75°C
75°C
100
0.1
T = −25°C
A
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 47. VCE(sat) versus IC
Figure 48. DC Current Gain
8
7
6
5
4
3
2
1
100
10
1
75°C
f = 1 MHz
l = 0 V
E
T = 25°C
A
25°C
0.1
T = −25°C
A
0.01
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 49. Output Capacitance
Figure 50. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
= 0.2 V
O
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 51. Input Voltage versus Output Current
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14
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5134DW1T1
1
1000
V
= 10 V
CE
I /I = 10
C B
75°C
75°C
−25°C
100
0.1
T = −25°C
A
25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 52. VCE(sat) versus IC
Figure 53. DC Current Gain
3.5
3
100
10
1
f = 1 MHz
l = 0 V
75°C
E
T = 25°C
A
2.5
2
25°C
1.5
1
0.1
T = −25°C
A
0.01
0.5
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
100
10
T = −25°C
A
1
25°C
75°C
V
= 0.2 V
O
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 56. Input Voltage versus Output Current
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15
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5135DW1T1
1
1000
V
= 10 V
CE
I /I = 10
C B
75°C
75°C
100
0.1
T = −25°C
A
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 57. VCE(sat) versus IC
Figure 58. DC Current Gain
12
100
10
1
75°C
f = 1 MHz
l = 0 V
10
8
E
T = 25°C
A
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 59. Output Capacitance
Figure 60. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
= 0.2 V
O
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 61. Input Voltage versus Output Current
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16
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1
1
1000
75°C
T = −25°C
A
100
25°C
0.1
75°C
25°C
10
1
−25°C
V
= 10 V
I /I = 10
CE
C
B
0.01
0
1
2
3
4
5
6
7
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
100
10
1.2
f = 1 MHz
= 0 V
T = 25°C
A
25°C
75°C
1.0
0.8
0.6
0.4
I
E
T = −25°C
A
1
0.2
0
= 5 V
V
O
0.1
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 64. Output Capacitance
Figure 65. Output Current versus Input Voltage
100
T = −25°C
A
25°C
10
V
= 0.2 V
O
75°C
1
0
2
4
6
8
10 12
14
16 18 20
I , COLLECTOR CURRENT (mA)
C
Figure 66. Input Voltage versus Output Current
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17
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137DW1T1
1
1000
75°C
T = −25°C
A
75°C
T = −25°C
A
0.1
100
25°C
25°C
V
= 10 V
CE
I /I = 10
C
B
0.01
10
0
5
10 15
20 25 30 35 40 45 50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 67. VCE(sat) versus IC
Figure 68. DC Current Gain
100
10
1
1.4
75°C
f = 1 MHz
= 0 V
T = 25°C
A
1.2
1.0
0.8
0.6
0.4
I
E
T = −25°C
A
25°C
0.1
0.01
V
= 5 V
O
0.2
0
0.001
0
1
2
3
4
5
6
7
8
9
10 11
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 69. Output Capacitance
Figure 70. Output Current versus Input Voltage
100
V
= 0.2 V
O
T = −25°C
A
10
75°C
25°C
1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 71. Input Voltage versus Output Current
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18
MUN5111DW1T1 Series
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE V
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
e
MILLIMETERS
DIM MIN NOM MAX MIN
0.80
INCHES
NOM MAX
1.10 0.031 0.037 0.043
0.10 0.000 0.002 0.004
0.008 REF
6
1
5
2
4
3
A
0.95
0.05
A1 0.00
H
E
−E−
A3
0.20 REF
0.21
0.14
2.00
1.25
0.65 BSC
0.20
2.10
b
C
D
E
e
0.10
0.10
1.80
1.15
0.30 0.004 0.008 0.012
0.25 0.004 0.005 0.010
2.20 0.070 0.078 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b 6 PL
L
0.10
2.00
0.30 0.004 0.008 0.012
2.20 0.078 0.082 0.086
H
E
M
M
E
0.2 (0.008)
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
A3
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
C
A
6. COLLECTOR 2
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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19
MUN5111DW1T1 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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