STK5Q4U362J-E [ONSEMI]
智能功率模块 (IPM)，600V，10A;
| 型号： | STK5Q4U362J-E |
| 厂家： | 
ONSEMI |
| 描述： | 智能功率模块 (IPM)，600V，10A |
| 文件： | 总16页 (文件大小：747K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
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STK5Q4U362J-E
Advance Information
Intelligent Power Module (IPM)
600 V, 10 A
The STK5Q4U362J-E is a fully-integrated inverter power stage
consisting of a high-voltage driver, six IGBT’s and a thermistor, suitable
for driving permanent magnet synchronous (PMSM) motors, brushless-
DC (BLDC) motors and AC asynchronous motors. The IGBT’s are
configured in a 3-phase bridge with separate emitter connections for the
lower legs for maximum flexibility in the choice of control algorithm.
The power stage has a full range of protection functions including cross-
conduction protection, external shutdown and under-voltage lockout
functions. An internal comparator and reference connected to the over-
current protection circuit allows the designer to set the over-current
protection level.
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PACKAGE PICTURE
Features
Three-phase 10 A / 600 V IGBT module with integrated drivers
Typical values : V (sat) = 1.8 V, V = 1.5 V, ESW = 390 J at 10 A
CE
F
Compact 29.6 mm 18.2 mm dual in-line package
Cross-conduction protection
Adjustable over-current protection level
Integrated bootstrap diodes and resistors
Enable pin
MODULE SPCM24 29.6x18.2 DIP S3
MARKING DIAGRAM
Thermistor
Typical Applications
Industrial Pumps
Industrial Fans
Industrial Automation
Home Appliances
STK5Q4U362J = Specific Device Code
A = Year
B = Month
C = Production Site
DD = Factory Lot Code
Device marking is on package underside
ORDERING INFORMATION
Shipping
(Qty / Packing)
Device
Package
MODULE SPCM24
29.6x18.2 DIP S3
(Pb-Free)
STK5Q4U362J-E
16 / Tube
Figure 1. Functional Diagram
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2016
October 2016 - Rev. P3
1
Publication Order Number :
STK5Q4U362J-E/D
STK5Q4U362J-E
STK5Q4U362J-E
Figure 2. Application Schematic
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STK5Q4U362J-E
Figure 3. Simplified Block Diagram
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STK5Q4U362J-E
PIN FUNCTION DESCRIPTION
Pin
Name
Description
1
2
3
4
5
6
7
8
9
GND
VDD
HINU
HINV
HINW
LINU
LINV
LINW
FAULT
ITRIP
ENABLE
RCIN
TH1
TH2
NU
Negative Main Supply
+15 V Main Supply
Logic Input High Side Gate Driver - Phase U
Logic Input High Side Gate Driver - Phase V
Logic Input High Side Gate Driver - Phase W
Logic Input Low Side Gate Driver - Phase U
Logic Input Low Side Gate Driver - Phase V
Logic Input Low Side Gate Driver - Phase W
Fault output
10
11
12
13
14
17
18
19
20
22
26
28
32
34
38
Current protection pin
Enable input
R, C connection terminal for setting FAULT clear time
Thermistor output 1
Thermistor output 2
Low Side Emitter Connection - Phase U
Low Side Emitter Connection - Phase V
Low Side Emitter Connection - Phase W
W phase output. Internally connected to W phase high side driver ground
High Side Floating Supply Voltage for W phase
V phase output. Internally connected to V phase high side driver ground
High Side Floating Supply voltage for V phase
U phase output. Internally connected to U phase high side driver ground
High Side Floating Supply voltage for U phase
Positive Bus Input Voltage
NV
NW
W
VBW
V
VBV
U
VBU
VP
Note : Pins 15, 16, 21, 23, 24, 25, 27, 29, 30, 31, 33, 35, 36, 37 are not present
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STK5Q4U362J-E
ABSOLUTE MAXIMUM RATINGS (Notes 1, 2)
Rating
Symbol
Conditions
VP to NU, NV, NW, surge < 500 V
Value
450
Unit
V
V
V
Supply voltage
Collector-emitter voltage
(Note 3)
CC
max
VP to U, V, W ; U to NU ; V to NV ; W to NW
VP, U, V, W, NU, NV, NW terminal current
600
V
CE
±10
A
Output current
Io
VP, U, V, W, NU, NV, NW terminal current,
Tc = 100C
VP, U, V, W, NU, NV, NW terminal current,
pulse width 1ms
±5
±20
A
A
V
Output peak current
Iop
V
VBU to U, VBV to V, VBW to W, V
(Note 4)
to GND
DD
,V
Gate driver supply voltages
0.3 to +20.0
DD BS
V
0.3 to V
Input signal voltage
HINU, HINV, HINW, LINU, LINV, LINW
FAULT terminal
V
V
IN
DD
0.3 to V
FAULT terminal voltage
RCIN terminal voltage
ITRIP terminal voltage
ENABLE terminal voltage
Maximum power dissipation
Junction temperature
Storage temperature
VFAULT
VRCIN
VITRIP
VENABLE
Pd
DD
0.3 to V
RCIN terminal
V
DD
ITRIP terminal
V
0.3 to +10.0
0.3 to V
ENABLE terminal
V
DD
IGBT per 1 channel
IGBT, Gate driver IC
31
150
W
Tj
C
Tstg
C
40 to +125
20 to +100
0.6
Operating case temperature
Package mounting torque
Isolation voltage
Tc
IPM case temperature
Case mounting screw
C
Nm
Vrms
Vis
50 Hz sine wave AC 1 minute
(Note 5)
2000
1. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for
Safe Operating parameters.
3. This surge voltage developed by the switching operation due to the wiring inductance between VP and NU,NV,NW terminals.
4.
V
= VBU to U, VBV to V, VBW to W.
BS
5. Test conditions : AC 2500 V, 1 s
RECOMMENDED OPERATING RANGES (Note 6)
Rating
Symbol
Min
0
Typ
280
15
Max
400
17.5
16.5
5.0
Unit
V
V
V
V
V
Supply voltage
VP to NU, NV, NW
V
CC
VBU to U, VBV to V, VBW to W
12.5
13.5
3.0
0
BS
Gate driver supply voltage
V
V
V
to GND (Note 4)
DD
15
DD
(ON)
IN
ON-state input voltage
OFF-state input voltage
PWM frequency
HINU, HINV, HINW, LINU, LINV, LINW
(OFF)
IN
0.3
fPWM
DT
1
20
kHz
μs
Dead time
Turn-off to turn-on (external)
ON and OFF
1
Allowable input pulse width
Package mounting torque
PWIN
1
μs
‘M3’ type screw
0.4
0.6
Nm
6. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to
stresses beyond the Recommended Operating Ranges limits may affect device reliability.
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STK5Q4U362J-E
ELECTRICAL CHARACTERISTICS at Tc = 25C, V
= 15 V, V
= 15 V (Note 7)
DD
BS
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Power output section
V
= 600 V
I
CE
Collector-emitter leakage current
-
-
100
μA
V
CE
V
(sat)
1.9
1.6
1.5
1.2
-
2.7
Ic = 10 A, Tj = 25C
Ic = 5 A, Tj = 100C
IF = 10 A, Tj = 25C
IF = 5 A, Tj = 100C
IGBT
CE
Collector to emitter saturation voltage
-
V
V
2.2
V
F
Diode forward voltage
Junction to case thermal resistance
Switching time
-
V
θj-c(T)
θj-c(T)
tON
-
-
-
-
-
-
-
-
-
-
-
-
4
C/W
C/W
μs
Freewheeling Diode
-
5.5
0.6
1.0
300
90
1.3
Ic = 10 A, V
Ic = 10 A, V
= 300 V, Tj = 25C
CC
CC
tOFF
1.6
Turn-on switching loss
Turn-off switching loss
Total switching loss
EON
-
-
-
-
-
-
-
-
μJ
μJ
μJ
μJ
μJ
μJ
μJ
ns
= 300 V, Tj = 25C
EOFF
ETOT
EON
390
360
110
470
60
Turn-on switching loss
Turn-off switching loss
Total switching loss
Ic = 10 A, V
Ic = 10 A, V
= 300 V, Tj = 25C
= 300 V, Tj = 25C
EOFF
ETOT
EREC
trr
CC
CC
Diode reverse recovery energy
Diode reverse recovery time
(di/dt set by internal driver)
160
Full
Square
Ic = 20 A, V
= 450 V
Reverse bias safe operating area
RBSOA
-
CE
V
= 400 V
Short circuit safe operating area
Allowable offset voltage slew rate
Driver Section
SCSOA
dv/dt
4
-
-
-
μs
CE
U to NU, V to NV, W to NW
50
V/ns
50
V
V
= 15 V (Note 4), per driver
= 15 V, total
ID
-
0.07
0.95
-
0.4
mA
mA
V
BS
DD
Gate driver consumption current
ID
-
3
High level Input voltage
Low level Input voltage
Logic 1 input current
Vin H
Vin L
IIN+
2.5
-
0.8
900
3
HINU, HINV, HINW, LINU, LINV, LINW
to GND
-
-
V
V
V
= +3.3 V
= 0 V
-
660
-
μA
μA
Ω
IN
IN
Logic 0 input current
IIN-
-
-
Bootstrap ON Resistance
FAULT terminal sink current
FAULT clearance delay time
IB = 1 mA
RB
110
2
-
FAULT : ON / VFAULT = 0.1 V
RCLR = 2 MΩ, CCLR = 1 nF
VEN ON-state voltage
VEN OFF-state voltage
ITRIP to GND
IoSD
FLTCLR
VEN(ON)
VEN(OFF)
VITRIP
tITRIP
-
-
mA
ms
V
1.1
2.5
-
1.65
-
2.2
-
ENABLE ON/OFF voltage
-
0.8
0.54
-
V
ITRIP threshold voltage
0.44
-
0.49
1.1
350
V
ITRIP to shutdown propagation delay
ITRIP blanking time
μs
ns
tITRIPBL
250
-
V
and V
supply undervoltage
BS
VDDUV+
VBSUV+
DD
positive going input threshold
and V supply undervoltage
10.2
10.0
-
11.1
10.9
0.2
11.8
11.6
-
V
V
V
V
VDDUV-
VBSUV-
DD
negative going input threshold
and V supply undervoltage Ilockout
BS
V
VDDUVH
VBSUVH
DD
hysteresis
BS
7. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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STK5Q4U362J-E
TYPICAL CHARACTERISTICS
TJ = 25C
TJ = 100C
TJ = 100C
TJ = 25C
Figure 4. V
versus ID for different temperatures
Figure 5. V versus ID for different temperatures
F
CE
(V
DD
= 15 V)
TJ = 100C
TJ = 100C
TJ = 25C
TJ = 25C
Figure 7. EOFF versus ID for different temperatures
Figure 6. EON versus ID for different temperatures
Figure 8. Thermal impedance plot (IGBT)
Figure 9. Thermal impedance plot (FRD)
X:100ns/div
X:100ns/div
Vce: 100V/div
Io:5A/div
Io:5A/div
Vce: 100V/div
Figure 10. Turn-on waveform Tj = 100C, V
= 400 V
Figure 11. Turn-off waveform Tj = 100C, V
= 400 V
CC
CC
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STK5Q4U362J-E
APPLICATIONS INFORMATION
Input / Output Timing Chart
Figure 12. Input/Output Timing Chart
Notes
1. This section of the timing diagram shows the effect of cross-conduction prevention.
2. This section of the timing diagram shows that when the voltage on V decreases sufficiently all gate output signals will go low,
DD
rises sufficiently, normal operation will resume.
switching off all six IGBTs. When the voltage on V
DD
3. This section shows that when the bootstrap voltage V
drops, the corresponding high side output (U or V or W) is switched off.
BS
rises sufficiently, normal operation will resume.
When V
BS
4. This section shows that when the voltage on ITRIP exceeds the threshold, all IGBT’s are turned off. Normal operation resumes
later after the over-current condition is removed.
5. After V
has risen above the threshold to enable normal operation, the driver waits to receive an input signal on the LIN input
DD
before enabling the driver for the HIN signal.
Input / Output Logic Table
INPUT
OUTPUT
U, V, W
High side
IGBT
Low side
IGBT
HIN
LIN
Itrip
Enable
FAULT
H
L
L
H
L
L
L
H
H
H
H
H
L
ON (Note 5)
OFF
OFF
ON
VP
OFF
OFF
OFF
OFF
ON
NU, NV, NW
L
L
OFF
OFF
OFF
OFF
OFF
High Impedance
High Impedance
High Impedance
High Impedance
H
X
X
H
X
X
L
OFF
H
X
OFF
OFF
OFF
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STK5Q4U362J-E
Thermistor characteristics
Parameter
Symbol
Condition
Min
99
Typ
100
Max
101
Unit
kΩ
kΩ
K
R
25
Tc = 25℃
Resistance
R
100
5.18
4208
40
5.38
4250
5.60
4293
+125
Tc = 100℃
B
B-Constant (25 to 50℃)
Temperature Range
℃
Figure 13. Thermistor Resistance versus Case Temperature
Case Temperature (Tc) TH to GND voltage characteristic
Figure 14. Thermistor Voltage versus Case Temperature
Conditions : RTH = 39 kΩ, pull-up voltage 5.0 V (see Figure 2)
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STK5Q4U362J-E
Fault output
Calculation of bootstrap capacitor value
The FAULT output is an open drain output requiring a
pull-up resistor. If the pull-up voltage is 5 V, use a
pull-up resistor with a value of 6.8 kΩ or higher. If the
pull-up voltage is 15 V, use a pull-up resistor with a
value of 20 kΩ or higher. The FAULT output is
The bootstrap capacitor value CB is calculated using
the following approach. The following parameters
influence the choice of bootstrap capacitor:
VBS : Bootstrap power supply.
triggered if there is a V
undervoltage or an
15 V is recommended.
DD
QG : Total gate charge of IGBT at V = 15 V.
overcurrent condition.
BS
45 nC
Undervoltage lockout protection
UVLO : Falling threshold for UVLO.
Specified as 12 V.
If V
goes below the V
supply undervoltage
DD
DD
lockout falling threshold, the FAULT output is
switched on. The FAULT output stays on until V
IDMAX : High side drive consumption current.
Specified as 0.4 mA
tONMAX : Maximum ON pulse width of high side
IGBT.
DD
supply undervoltage lockout
rises above the V
DD
rising threshold. After V
has risen above the
DD
threshold to enable normal operation, the driver waits
to receive an input signal on the LIN input before
enabling the driver for the HIN signal.
Capacitance calculation formula:
CB = (QG + IDMAX * tONMAX)/(VBS - UVLO)
Overcurrent protection
CB is recommended to be approximately 3 times the
value calculated above. The recommended value of CB
is in the range of 1 to 47 μF, however, the value needs
to be verified prior to production. When not using the
bootstrap circuit, each high side driver power supply
requires an external independent power supply.
An over-current condition is detected if the voltage on
the ITRIP pin is larger than the reference voltage.
There is a blanking time of typically 350 ns to improve
noise immunity. After a shutdown propagation delay of
typically 1.1 s, the FAULT output is switched on. The
FAULT output is held on for a time determined by the
resistor and capacitor connected to the RCIN pin. If
RCLR = 2 MΩ and CCLR = 1 nF, the FAULT output
is switched on for 1.65 ms (typical).
The internal bootstrap circuit uses a MOSFET. The
turn on time of this MOSFET is synchronized with the
turn on of the low side IGBT. The bootstrap capacitor
is charged by turning on the low side IGBT.
The over-current protection threshold should be set to
be equal or lower to 2 times the module rated current
(IO).
If the low side IGBT is held on for a long period of
time (more than one second for example), the bootstrap
voltage on the high side MOSFET will slowly
discharge.
An additional fuse is recommended to protect against
system level or abnormal over-current fault conditions.
Capacitors on High Voltage and V
DD
supplies
100
10
Both the high voltage and V
supplies require an
DD
electrolytic capacitor and an additional high frequency
capacitor.
1
Enable pin
The ENABLE terminal pin is used to enable or shut
down the built-in driver. If the voltage on the ENABLE
pin rises above the ENABLE ON-state voltage the
output drivers are enabled. If the voltage on the
ENABLE pin falls below the ENABLE OFF-state
voltage, the drivers are disabled.
0.1
0.01
0.1
1
10
100
1000
tONMAX [ms]
Figure 15. Bootstrap capacitance versus tONMAX
Minimum input pulse width
When input pulse width is less than 1 μs, an output
may not react to the pulse. (Both ON signal and OFF
signal)
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STK5Q4U362J-E
Mounting Instructions
Item
Recommended Condition
Pitch
26.0 ±0.1 mm (Please refer to Package Outline Diagram)
Diameter : M3
Screw head types: pan head, truss head, binding head
Screw
Plane washer dimensions (Figure 16)
D = 7 mm, d = 3.2 mm and t = 0.5 mm JIS B 1256
Washer
Material : Aluminum or Copper
Warpage (the surface that contacts IPM ) : 50 to 50 μm
Screw holes must be countersunk.
No contamination on the heat sink surface that contacts IPM.
Heat sink
Torque
Grease
Temporary tightening : 50 to 60% of final tightening on first screw
Temporary tightening : 50 to 60% of final tightening on second screw
Final tightening : 0.4 to 0.6 Nm on first screw
Final tightening : 0.4 to 0.6 Nm on second screw
Silicone grease.
Thickness : 50 to 100 μm
Uniformly apply silicone grease to whole back.
Thermal foils are only recommended after careful evaluation. Thickness, stiffness and
compressibility parameters have a strong influence on performance.
Recommended
Not recommended
Silicone grease
Figure 16. Module Mounting details: components; washer drawing; need for even spreading of thermal grease
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STK5Q4U362J-E
TEST CIRCUITS
■ I
CE
ICE
A
34
32
M
VBS=15V
VBS=15V
U+
V+
W+
U-
V-
W-
M
N
38
32
38
26
38
20
32
17
26
18
20
19
28
26
U+,V+,W+ : High side phase
U-,V-,W- : Low side phase
VCE
22
20
VBS=15V
VDD=15V
2
1
N
Figure 17. Test Circuit for I
CE
34
32
M
VBS=15V
VBS=15V
VBS=15V
■V (sat) (Test by pulse)
CE
U+
V+
W+
U-
V-
W-
26
M
N
38
32
3
38
26
4
38
20
5
32
17
6
26
18
7
20
19
8
V
Ic
22
20
VCE(sat)
m
2
VDD=15V
5V
N
m
1,10,N
Figure 18. Test circuit for V (sat)
CE
■ VF (Test by pulse)
U+
V+
W+
U-
V-
W-
M
N
38
32
38
26
38
20
32
17
26
18
20
19
Figure 19. Test circuit for VF
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STK5Q4U362J-E
M
■ RB (Test by pulse)
6
U+
V+
W+
5V
7
8
M
N
2
2
2
V
IB
34
28
22
VB
(RB)
2
VDD=15V
N
1,3,4,5,10
Figure 20. Test circuit for RB
ID
■ ID
A
M
VBS U+
34
VBS V+
VBS W+
VDD
VD
M
N
28
26
22
20
2
1
32
N
Figure 21. Test circuit for ID
■ Switching time (The circuit is a representative example of the low side U phase.)
34
32
38
32
Input signal
(0 to5V)
VBS=15V
28
26
VBS=15V
Vcc
90%
22
20
CS
VBS=15V
Io
Ic
10%
2
VDD=15V
17
6
Input signal
tOFF
tON
1,10
Figure 22. Switching time test circuit
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STK5Q4U362J-E
PACKAGE DIMENSIONS
unit : mm
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STK5Q4U362J-E
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries
in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other
intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON
Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is
responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters,
including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its
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相关型号：
STK6031
•80C51 Central Processing Unit (CPU).–Option for multiple CPU clock (XTAL1, XTAL1 x 2, or XTAL1 / 3.–Industrial standard 80C51 instruction set.–Normal mode, idle mode, and stop mode.•Program Memory : 64 kbytes on-chip flash memory.–with hardware ISP (In-System Programming).–Program code protection.•Main Data RAM: 256 bytes (upper 128 + lower 128 bytes) of on-chip SRAM.•Aux Memory (AUX RAM): 768 bytes of SRAM.•SFRs (Special Function Register): 46 SFRs.•Timers: Timer 0, Timer 1, and Timer 2.•On-chip Watchdog Timer.•Full-duplex UART•Five I/O ports: Port 0, Port 1, Port 2, Port 3, and Port 4 (P4.0 ~•On-chip power-on-reset with low-voltage detection and reset.•Interrupts: 6 sources, 2 priority level, 6 vectored addresses.•Software enable/disable of ALE output pulse to reduce EMI.•4-channel, 6-bit ADC.•5-channel, 8-bit PWM.•CPU operating freque
ETC
STK6035
The STK6035, is an one-chip video decoder with integrated scalar, OSD function, TCON, which can drives small size 2.5, 7, 10-inch or higher TFT-LCD panels with TTL interlace. For digital panels, STK6035 can support the display resolutions of from 640x480, 800x480, 854x480, and up to 800x600.
ETC
STK6036A
The STK6036, is an one-chip video decoder with integrated scalar, OSD function, TCON, and DAC, which can drives small size 3.5, 4, 5.6, 7, 8, 9, and up to 10-inch TFT-LCD panel with analog interlace. For analog panels, STK6036 can support the display resolutions of 1920x468, 1440x468, 960x468, 1920x234, 1440x234, 1200x234, 960x234, 480x234.
ETC
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