STMFSC008N10M5 [ONSEMI]
MOSFET - PowerTrench®, N-Channel, Dual Cool®, Shielded Gate, 100 V, 60 A, 7.5 mΩ;
| 型号： | STMFSC008N10M5 |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - PowerTrench®, N-Channel, Dual Cool®, Shielded Gate, 100 V, 60 A, 7.5 mΩ 栅 |
| 文件： | 总7页 (文件大小：362K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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ELECTRICAL CONNECTION
MOSFET -
POWERTRENCH),
N-Channel, DUAL COOL),
Shielded Gate
S
D
D
D
D
S
S
G
100 V, 60 A, 7.5 mW
N-Channel MOSFET
STMFSC008N10M5
D
D
D
D
Pin 1
General Description
G
This N−Channel MOSFET is produced using onsemi’s advanced
S
S
®
Pin 1
S
POWERTRENCH process that incorporates Shielded Gate
®
technology. Advancements in both silicon and DUAL COOL
Top
Bottom
package technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely low
Junction−to−Ambient thermal resistance.
DS(on)
DFN8, Dual CoolE
CASE 506EG
Features
MARKING DIAGRAM
• Shielded Gate MOSFET Technology
• DUAL COOL Top Side Cooling PQFN package
2HAYWZ
• Max r
• Max r
= 7.5 mW at V = 10 V, I = 14.5 A
GS D
DS(on)
= 12 mW at V = 6 V, I = 11.5 A
DS(on)
GS
D
• High performance technology for extremely low r
• 100% UIL Tested
DS(on)
• RoHS Compliant
2H
A
Y
= Specific Device Code
= Assembly Location
= Year
Typical Applications
• Primary DC−DC MOSFET
• Secondary Synchronous Rectifier
• Load Switch
W
Z
= Work Week
= Assembly Lot Code
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
February, 2022 − Rev. 3
STMFSC008N10M5/D
STMFSC008N10M5
ORDERING INFORMATION AND PACKAGE MARKING
†
Device
Marking
Package
Reel Size
Tape Width
Shipping
STMFSC008N10M5
86101
DFN8
13”
12 mm
3000 Units/
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Units
100
V
V
V
I
Drain to Source Voltage
Gate to Source Voltage
DS
GS
20
60
V
A
Drain Current
−Continuous
T = 25°C
C
D
14.5
−Continuous
−Pulsed
T = 25°C
(Note 1a)
(Note 3)
A
200
216
mJ
W
E
P
Single Pulse Avalanche Energy
Power Dissipation
AS
125
T
= 25°C
D
C
3.2
Power Dissipation
T = 25°C
A
(Note 1a)
−55 to +150
°C
T , T
Operating and Storage Junction Temperature Range
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
GS
100
V
DSS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
70
mV/°C
DBVDSS
DTJ
D
I
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80 V, V
GS
= 0 V
= 0 V
1
mA
DSS
GSS
DS
=
20 V, V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2
2.7
4
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage Tempera-
ture Coefficient
= 250 mA, referenced to 25°C
−10
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On Resistance
V
V
V
= 10 V, I = 14.5 A
6
7.5
12
13
mW
DS(on)
GS
GS
GS
D
= 6 V, I = 11.5 A
8.3
10
44
D
= 10 V, I = 14.5 A, T = 125°C
D
J
g
FS
V
DD
= 10 V, I = 14.5 A
S
Forward Transconductance
D
DYNAMIC CHARACTERISTICS
V
DS
= 50 V, V = 0 V, f = 1 MHz
2354
467
23
3135
625
35
pF
pF
pF
W
C
C
C
R
GS
Input Capacitance
ISS
OSS
RSS
G
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.1
1.4
3
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2
STMFSC008N10M5
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
SWITCHING CHARACTERISTICS
td
Turn*On Delay Time
Rise Time
V
V
= 50 V, I = 14.5 A,
14
8.2
25
5.5
31
18
8.3
7
25
17
40
11
44
25
ns
ns
(ON)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
t
t
r
Turn*Off Delay Time
Fall Time
ns
D(OFF)
f
ns
Q
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain ”Miller” Charge
V
V
= 0 V to 10 V
= 0 V to 5 V
nC
nC
nC
nC
g(TOT)
GS
GS
Q
Q
gs
gd
V
I
= 50 V,
DD
D
= 14.5 A
DRAIN−SOURCE DIODE CHARACTERISTICS
0.71
0.78
54
1.2
1.3
87
V
V
= 0 V, I = 2.7 A
(Note 2)
(Note 2)
Source to Drain Diode Forward Voltage
V
SD
GS
S
V
GS
= 0 V, I = 14.5 A
S
t
rr
ns
Reverse Recovery Time
I = 14.5 A, di/dt = 100 A/ms
F
62
99
Q
nC
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Ratings
2.3
1.0
38
Units
R
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
(Note 1e)
(Note 1f)
°C/W
q
q
q
q
q
q
q
q
q
q
q
q
q
q
JC
JC
JA
JA
JA
JA
JA
JA
JA
JA
JA
JA
JA
JA
R
R
R
R
R
R
R
R
R
R
R
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
81
27
34
16
19
(Note 1g)
(Note 1h)
(Note 1i)
26
61
16
(Note 1j)
23
(Note 1k)
(Note 1l)
11
13
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3
STMFSC008N10M5
NOTES:
1. R
is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. R
is guaranteed by
q
q
JC
JA
design while R
is determined by the user’s board design.
q
CA
a) 38°C/W when mounted on
b) 81°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
2
c) Still air, 20.9×10.4×12.7 mm Aluminum Heat Sink, 1 in pad of 2 oz copper
d) Still air, 20.9×10.4×12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
e) Still air, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper
f) Still air, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2
g) .200FPM Airflow, No Heat Sink, 1 in pad of 2 oz copper
h) .200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
2
i) .200FPM Airflow, 20.9×10.4×12.7 mm Aluminum Heat Sink, 1 in pad of 2 oz copper
j) .200FPM Airflow, 20.9×10.4×12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
k) .200FPM Airflow, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper
l) .200FPM Airflow, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting T = 25_C; N−ch: L = 0.3 mH, I = 38 A, V = 90 V, V = 10 V.
J
AS
DD
GS
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
J
5
200
150
100
50
V
= 8 V
V
= 10 V
GS
GS
VGS = 5 V
V
= 7 V
V
= 6 V
GS
GS
4
3
2
1
0
VGS = 6 V
VGS = 7 V
V
= 5 V
GS
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 8 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
0
50
100
150
200
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
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STMFSC008N10M5
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
J
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
25
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
ID = 14.5 A
VGS = 10 V
ID = 14.5 A
20
15
10
TJ = 125 o
C
5
0
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATUREoC( )
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On-Resistance
vs. Gate to Source Voltage
200
150
100
50
200
100 VGS = 0 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
10
VDS = 5 V
TJ = 150 o
C
1
0.1
TJ = 25oC
T
J = 150 o
C
TJ = −55oC
TJ = 25 o
J = −55oC
C
0.01
0.001
T
0
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
10
8
5000
1000
Ciss
ID = 14.5 A
VDD = 25 V
VDD = 50 V
6
Coss
VDD = 75 V
4
100
10
2
f = 1 MHz
Crss
V
GS = 0 V
0
0
8
16
24
32
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
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5
STMFSC008N10M5
90
75
60
45
100
10
1
TJ = 25oC
V
GS = 10 V
TJ = 100oC
VGS = 6 V
Limited by Package
30
15
0
TJ = 125 o
C
R
qJC = 1.0 oC/W
25
50
75
100
125
150
0.001
0.01
0.1
1
10
100 300
TC, CASE TEMPERATUREo(C)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
300
100
2000
1000
SINGLE PULSE
qJA = 81oC/W
R
T
A = 25oC
1 ms
10
1
100
10
1
10 ms
THIS AREA IS
LIMITED BY r
DS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1 s
0.1
R
qJA = 81 oC/W
10 s
DC
T
A = 25oC
0.01
10−3
10−2
10−1
1
10
100
1000
0.01
0.1
1
10
100 500
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
0.1
P
DM
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
0.01
SINGLE PULSE
qJA = 81 oC/W
1
2
R
PEAK T = P
x Z
x R
+ T
qJA A
J
DM
qJA
0.001
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (sec)
11
0
100
1000
Figure 13. Junction−to−Case Transient Thermal Response Curve
POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its sub-
sidiaries in the United States and/or other countries.
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6
STMFSC008N10M5
PACKAGE DIMENSIONS
DFN8 5.1x6.15, 1.27P
CASE 506EG
ISSUE D
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
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Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
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◊
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