SZUESD6.0DT5G [ONSEMI]

ESD Protection Common Anode Diodes;
SZUESD6.0DT5G
型号: SZUESD6.0DT5G
厂家: ONSEMI    ONSEMI
描述:

ESD Protection Common Anode Diodes

二极管 瞬态抑制器
文件: 总4页 (文件大小:40K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
mESD3.3DT5G SERIES  
ESD Protection Diodes  
In Ultra Small SOT−723 Package  
The mESD Series is designed to protect voltage sensitive components  
from ESD. Excellent clamping capability, low leakage, and fast response  
time, make these parts ideal for ESD protection on designs where board  
space is at a premium. Because of its small size, it is suited for use in  
cellular phones, portable devices, digital cameras, power supplies and  
many other portable applications.  
http://onsemi.com  
1
2
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
Specification Features:  
3
Small Body Outline Dimensions:  
0.047x 0.032(1.20 mm x 0.80 mm)  
Low Body Height: 0.020(0.5 mm)  
Stand−off Voltage: 3.3 V − 6.0 V  
Low Leakage  
MARKING  
DIAGRAM  
3
Response Time is Typically < 1 ns  
ESD Rating of Class 3 (> 16 kV) per Human Body Model  
IEC61000−4−2 Level 4 ESD Protection  
IEC61000−4−4 Level 4 EFT Protection  
These are Pb−Free Devices  
2
1
xx M  
SOT−723  
CASE 631AA  
STYLE 4  
xx = Device Code  
M
= Date Code  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic  
Epoxy Meets UL 94 V−0  
LEAD FINISH: 100% Matte Sn (Tin)  
MOUNTING POSITION: Any  
QUALIFIED MAX REFLOW TEMPERATURE: 260°C  
Device Meets MSL 1 Requirements  
ORDERING INFORMATION  
Device  
mESDxxDT5G  
Package  
Shipping  
SOT−723 8000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
MAXIMUM RATINGS  
Rating  
IEC 61000−4−2 (ESD)  
Symbol  
Value  
Unit  
Air  
Contact  
±30  
±30  
kV  
DEVICE MARKING INFORMATION  
IEC 61000−4−4 (EFT)  
40  
A
See specific marking information in the device marking  
column of the table on page 2 of this data sheet.  
ESD Voltage  
Per Human Body Model  
Per Machine Model  
16  
400  
kV  
V
Total Power Dissipation on FR−5 Board  
mW  
mW/°C  
(Note 1) @ T = 25°C  
P
D
240  
1.9  
A
Derate above 25°C  
°C/W  
Thermal Resistance Junction−to−Ambient  
R
525  
q
JA  
Junction and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Lead Solder Temperature − Maximum  
(10 Second Duration)  
T
L
260  
°C  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR−5 = 1.0 x 0.75 x 0.62 in.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
April, 2005 − Rev. 0  
mESD3.3DT5G/D  
 
mESD3.3DT5G SERIES  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
I
I
F
Symbol  
Parameter  
Maximum Reverse Peak Pulse Current  
Clamping Voltage @ I  
I
PP  
V
C
PP  
V
RWM  
Working Peak Reverse Voltage  
V
C
V
V
I
Maximum Reverse Leakage Current @ V  
BR RWM  
R
RWM  
V
I
V
F
R
T
V
BR  
Breakdown Voltage @ I  
Test Current  
T
I
I
T
I
F
Forward Current  
V
F
Forward Voltage @ I  
F
P
Peak Power Dissipation  
Max. Capacitance @V = 0 and f = 1 MHz  
pk  
I
PP  
C
R
Uni−Directional TVS  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA for all types)  
A
F
F
V
BR  
(V) @ I  
T
(Note 2)  
V
(V)  
I
R
(mA) @ V  
Max  
1.0  
I
T
C (pF)  
Typ  
47  
RWM  
RWM  
Device  
Marking  
Max  
3.3  
5.0  
6.0  
Min  
mA  
1.0  
1.0  
1.0  
Device*  
mESD3.3DT5G  
L0  
L2  
L3  
5.0  
mESD5.0DT5G  
mESD6.0DT5G  
0.1  
6.2  
38  
0.1  
7.0  
34  
*Other voltages available upon request.  
2. V is measured with a pulse test current I at an ambient temperature of 25°C.  
BR  
T
http://onsemi.com  
2
 
mESD3.3DT5G SERIES  
TYPICAL CHARACTERISTICS  
7.4  
7.3  
7.2  
7.1  
7.0  
6.9  
6.8  
6.7  
6.6  
6.5  
6.4  
6.3  
20  
18  
16  
14  
12  
10  
8
mESDxxDT5G  
6
mESDxxDT5G  
4
2
0
−55  
55  
+25  
+150  
+25  
+150  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 1. Typical Breakdown Voltage  
versus Temperature  
Figure 2. Typical Leakage Current  
versus Temperature  
45  
300  
40  
35  
30  
250  
200  
mESDxxDT5G  
25  
20  
15  
10  
150  
100  
50  
FR−5 BOARD  
5
0
0
0
1
2
3
4
5
0
25  
50  
75  
100  
125  
150  
175  
BIAS VOLTAGE (V)  
TEMPERATURE (°C)  
Figure 3. Typical Capacitance versus Bias Voltage  
Figure 4. Steady State Power Derating Curve  
http://onsemi.com  
3
mESD3.3DT5G SERIES  
PACKAGE DIMENSIONS  
SOT−723  
CASE 631AA−01  
ISSUE A  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
−X−  
E
D
A
b1  
−Y−  
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
3
HE  
L
1
2
MILLIMETERS  
INCHES  
NOM MAX  
0.018 0.020 0.022  
DIM MIN  
NOM  
0.50  
0.20  
0.3  
0.12  
MAX  
0.55  
0.27 0.0059 0.0079 0.0106  
0.35 0.010 0.012 0.014  
0.17 0.0028 0.0047 0.0067  
MIN  
b 2X  
C
A
b
b1  
C
D
E
e
H E  
L
0.45  
0.15  
0.25  
0.07  
1.15  
0.75  
e
0.08 (0.0032) X Y  
1.20  
0.80  
1.25  
0.85  
0.045 0.047 0.049  
0.03 0.032 0.034  
0.016 BSC  
0.40 BSC  
1.20  
0.20  
1.15  
0.15  
1.25  
0.045 0.047 0.049  
0.25 0.0059 0.0079 0.0098  
STYLE 4:  
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
SOLDER FOOTPRINT*  
0.40  
0.0157  
0.40  
0.0157  
1.0  
0.039  
0.40  
0.0157  
0.40  
0.0157  
0.40  
0.0157  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
SOT−723  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
mESD3.3DT5G/D  

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