VN2222LLRLRM [ONSEMI]

Small Signal MOSFET 150 mAmps, 60 Volts; 小信号MOSFET 150毫安， 60伏


型号：	VN2222LLRLRM
厂家：	ONSEMI
描述：	Small Signal MOSFET 150 mAmps, 60 Volts 小信号MOSFET 150毫安， 60伏晶体小信号场效应晶体管开关
文件：	总4页 (文件大小：52K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

VN2222LL

Preferred Device

Small Signal MOSFET

150 mAmps, 60 Volts

N−Channel TO−92

http://onsemi.com

Features

• Pb−Free Packages are Available*

150 mA, 60 V

R_DS(on)= 7.5 W

MAXIMUM RATINGS

N−Channel

Rating

Drain−Source Voltage

Symbol

Value

Unit

Vdc

DSS

DGR

Drain−Gate Voltage (R = 1.0 MW)

Gate−Source Voltage

− Continuous

±20

±40

Vdc

Vpk

− Non−repetitive (t ≤ 50 ms)

GSM

Drain Current

− Continuous

− Pulsed

mAdc

150

1000

Total Power Dissipation @ T = 25°C

Derate above 25°C

400

3.2

mW/°C

TO−92

CASE 29

STYLE 22

Operating and Storage Temperature Range

T , T

−55 to

+150

°C

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

MARKING DIAGRAM

& PIN ASSIGNMENT

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

312.5

300

Unit

°C/W

°C

Thermal Resistance, Junction−to−Ambient

VN22

22LL

AYWW

Maximum Lead Temperature for

Soldering Purposes, 1/16″ from case

for 10 seconds

Source

Drain

Gate

= Assembly Location

= Year

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

September, 2004 − Rev. 3

VN2222LL/D

VN2222LL

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Drain−Source Breakdown Voltage

−

Vdc

(BR)DSS

(V = 0, I = 100 mAdc)

Zero Gate Voltage Drain Current

(V = 48 Vdc, V = 0)

mAdc

DSS

−

500

(V = 48 Vdc, V = 0, T = 125°C)

Gate−Body Leakage Current, Forward

(V = 30 Vdc, V = 0)

−

−100

nAdc

GSSF

GSF

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

GS(th)

0.6

2.5

Vdc

(V = V , I = 1.0 mAdc)

Static Drain−Source On−Resistance

(V = 10 Vdc, I = 0.5 Adc)

DS(on)

−

7.5

13.5

(V = 10 Vdc, I = 0.5 Vdc, T = 125°C)

Drain−Source On−Voltage

(V = 5.0 Vdc, I = 200 mAdc)

DS(on)

−

Vdc

1.5

(V = 10 Vdc, I = 500 mAdc)

3.75

On−State Drain Current

(V = 10 Vdc, V ≥ 2.0 V )

DS(on)

750

100

−

D(on)

Forward Transconductance

(V = 10 Vdc, I = 500 mAdc)

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

−

iss

(V = 25 Vdc, V = 0,

Output Capacitance

oss

f = 1.0 MHz)

Reverse Transfer Capacitance

5.0

rss

SWITCHING CHARACTERISTICS (Note 1)

Turn−On Delay Time

−

(V = 15 Vdc, I = 600 mA,

= 25 W, R = 23 W)

gen

Turn−Off Delay Time

off

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device

†

Package

Shipping

VN2222LL

TO−92

1000 Unit / Box

VN2222LLG

TO−92

(Pb−Free)

VN2222LLRL

TO−92

1000 Unit / Box

2000 Tape & Reel

VN2222LLRLRA

VN2222LLRLRAG

TO−92

(Pb−Free)

VN2222LLRLRM

TO−92

2000 Unit / Ammo Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

VN2222LL

1.8

1.6

T = 25°C

25°C

= 10 V

0.8

= 10 V

−ꢀ55°C

1.4

1.2

9 V

125°C

0.6

0.4

0.2

8 V

7 V

0.8

0.6

0.4

0.2

6 V

5 V

4 V

3 V

, DRAIN−ꢀSOURCE VOLTAGE (VOLTS)

V , GATEꢀ−ꢀSOURCE VOLTAGE (VOLTS)

Figure 1. Ohmic Region

Figure 2. Transfer Characteristics

2.4

2.2

1.2

1.15

= V

= 1 mA

1.1

1.05

= 10 V

= 200 mA

1.8

1.6

1.4

1.2

0.95

0.9

0.85

0.8

0.6

0.4

0.75

0.7

+140

−60

−20

+20

+60

+100

−60

−20

+20

+60

+100

T, TEMPERATURE (°C)

Figure 3. Temperature versus Static

Drain−Source On−Resistance

Figure 4. Temperature versus Gate

Threshold Voltage

http://onsemi.com

VN2222LL

PACKAGE DIMENSIONS

TO−92

CASE 29−11

ISSUE AL

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

INCHES

DIM MIN MAX

MILLIMETERS

SEATING

PLANE

MIN

4.45

4.32

3.18

0.407

1.15

2.42

0.39

12.70

6.35

2.04

−−−

MAX

5.20

5.33

4.19

0.533

1.39

2.66

0.50

−−−

0.175

0.170

0.125

0.016

0.045

0.095

0.015

0.500

0.250

0.080

−−−

0.205

0.210

0.165

0.021

0.055

0.105

0.020

−−−

X X

−−−

0.105

0.100

−−−

2.66

2.54

−−−

SECTION X−X

0.115

0.135

2.93

3.43

−−−

STYLE 22:

PIN 1. SOURCE

2. GATE

3. DRAIN

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

VN2222LL/D

http://onsemi.com

VN2222LLRLRM [ONSEMI]

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