Q62702P3558 [OSRAM]
Hybride Impuls-Laserdiode mit integrierter Treiberstufe 14 W Spitzenleistung; 杂合体IMPULS - Laserdiode MIT integrierter Treiberstufe 14瓦Spitzenleistung
| 型号： | Q62702P3558 |
| 厂家： | 
OSRAM GMBH |
| 描述： | Hybride Impuls-Laserdiode mit integrierter Treiberstufe 14 W Spitzenleistung |
| 文件： | 总7页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Hybride Impuls-Laserdiode mit integrierter Treiberstufe 14 W Spitzenleistung
Hybrid Pulsed Laser Diode with Integrated Driver Stage 14 W Peak Power
Lead (Pb) Free Product - RoHS Compliant
SPL LL85
Besondere Merkmale
Features
• Kleines kostengünstiges Plastik-Gehäuse
• Integriert sind ein FET und Kondensatoren zur
Impulsansteuerung
• InAlGaAs/GaAs kompressiv verspannte
Quantenfilmstruktur
• Low cost, small size plastic package
• Integrated FET and capacitors for pulse control
• Strained InAlGaAs/GaAs QW-structures
• High power large-optical-cavity laser structure
• Laser aperture 200 µm x 2 µm
• Hochleistungslaser mit „Large-Optical-Cavity“
(LOC) Struktur
• High-speed operation (< 30 ns pulse width)
• Low supply voltage (< 9 V)
• Laserapertur 200 µm x 2 µm
• Schneller Betrieb (< 30 ns Impulsbreite)
• Niedrige Versorgungsspannung (< 9 V)
Applications
• Range finding
• Security, surveillance
• Illumination, ignition
• Testing and measurement
Anwendungen
• Entfernungsmessung
• Sicherheit, Überwachung
• Beleuchtung, Zündung
• Test- und Messsysteme
Safety advices
Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
Sicherheitshinweise
Je nach Betriebsart emittieren diese Bauteile human eye. Products which incorporate these
hochkonzentrierte, nicht sichtbare Infrarot- devices have to follow the safety precautions
Strahlung, die gefährlich für das menschliche given in IEC 60825-1 “Safety of laser products”.
Auge sein kann. Produkte, die diese Bauteile
enthalten, müssen gemäß den Sicherheits-
richtlinien der IEC-Norm 60825-1 behandelt
werden.
Typ
Type
Opt. Spitzenausgangsleistung Wellenlänge
Bestellnummer
Ordering Code
Opt. Peak Power
Wavelength
SPL LL85
2006-04-12
14 W
850 nm
Q62702P3558
1
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
SPL LL85
Grenzwerte (kurzzeitiger Betrieb) (TA = 25 °C)
Maximum Ratings (short time operation)
Parameter
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
min.
max.
Spitzenausgangsleistung
Peak output power
Popt
VC
–
18
W
V
Ladespannung (VG = 15 V)
Charge voltage (VG = 15 V)
9
Gate-Spannung
Gate voltage
VG
– 20
–
+ 20
0.1
V
Tastverhältnis
Duty cycle
%
°C
°C
°C
d.c.
Top
Tstg
Ts
Betriebstemperatur
Operating temperature
- 40
- 40
–
+ 85
+ 100
+ 260
Lagertemperatur
Storage temperature
Löttemperatur (tmax = 10 s)
Soldering temperature (tmax = 10 s)
2006-04-12
2
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
SPL LL85
Optische Kennwerte (TA = 25 °C)
Optical Characteristics
Parameter
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
min.
typ.
max.
Zentrale Emissionswellenlänge1)
Emission wavelength1)
Spektralbreite (Halbwertsbreite)1)
Spectral width (FWHM)1)
Spitzenausgangsleistung1)
Peak output power1)
λ
840
850
860
nm
nm
W
∆λ
Popt
UC, th
tp
–
4
9
12
1.2
25
14
1.5
28
18
2.0
31
Ladespannung an der Laserschwelle
Charge Voltage at laser threshold
Pulsbreite (Halbwertsbreite)1), 2)
Pulse width (FWHM)1), 2)
V
ns
Anstiegs- und Abfallzeit (10% … 90%)1), 2)
Rise and fall time (10% … 90%)1), 2)
tr,
tf
7.0
26
9.5
29
12.0
32
ns
ns
Austrittsöffnung
Aperture size
w × h
–
200 × 2
–
µm2
Strahldivergenz (Halbwertsbreite) parallel zum
pn-Übergang1)
θ||
12
15
18
Grad
deg.
Beam divergence (FWHM) parallel to pn junction1)
Strahldivergenz (Halbwertsbreite) senkrecht zum θ⊥
pn-Übergang1)
27
30
33
Grad
deg.
Beam divergence (FWHM) perpendicular to
pn-junction1)
Temperaturkoeffizient der Wellenlänge
Temperature coefficient of wavelength
∂λ / ∂T
–
–
–
0.25
200
4.5
0.32
–
nm/K
K/W
V
Thermischer Widerstand
Thermal resistance
Rth
Einschaltpunkt der Gate-Spannung
Switch on gate voltage
VG on
–
1)
Werte beziehen sich auf folgende Standardbetriebsbedingung: >40ns Trigger-Pulsbreite, 1kHz Pulswiederholrate, 6.7V
Ladespannung, 15V Gate-Spannung und 25°C Umgebungstemperatur. Der Laser wird angesteuert mit dem MOSFET-Treiber Elantec
EL7104C.
Values refer to the following standard operating conditions: >40ns trigger pulse width, 1kHz pulse repetition rate, 6.7V charge voltage,
15V gate voltage and 25 °C ambient temperature. The laser is driven by the MOSFET driver Elantec EL7104C.
Die Schaltgeschwindigkeit ist abhängig von Strom und Geschwindigkeit, mit der die Gate-Kapazität (typ. 300pF) des internen
Transistors geladen wird. Kürzere Pulsbreiten, Anstiegs- und Abfallzeiten erhält man bei Trigger-Pulsbreiten <40ns. Dies bewirkt
jedoch auch eine reduzierte optische Spitzenleistung (siehe Diagramme auf Seite 5).
2)
Switching speed at gate depends on current and speed, charging the gate capacitance (typ. 300pF) of the internal transistor. Reduced
pulse widths, rise and fall times occur at trigger pulse widths <40ns. This also reduces the optical peak power (see diagrams on page 5).
2006-04-12
3
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
SPL LL85
Optical output power Popt vs charge voltage Vc
(tp = 30 ns, PRF = 1 kHz, VG = 15 V )
Optical spectrum, relative intensity Irel vs.
wavelength λ (Popt = 14 W, tp = 30 ns)
OHW00919
OHW00917
1.00
%
20
W
Ιrel
P
opt
0.75
0.50
15
10
5
0.25
0
0
0
1
2
3
4
5
6
7
V
9
830 835 840 845 850 855 nm 865
VC
λ
Far-field distribution parallel to junction
Far-field distribution perpendicular to
Irel vs. angle θ||
junction Irel vs. angle θ⊥
OHW00795
OHW00794
1.00
1.00
0.75
0.50
0.25
0
Ιrel
Ιrel
0.75
0.50
0.25
0
-30 -20 -10
0
10
Deg 30
-50
-30
-10
10
30 Deg 50
θ
θ
2006-04-12
4
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
SPL LL85
Optical pulse form for variing trigger pulse
widths (MOSFET driver Elantec EL7104C)
Optical pulse width vs. trigger pulse width
(MOSFET driver Elantec EL7104C)
OHL01651
OHL01652
20
35
ns
30
W
15
25
20
15
10
5
20 ns
15 ns
10 ns
6 ns
5 ns
4.5 ns
4 ns
80 ns
40 ns
30 ns
25 ns
10
5
0
0
0
50
ns 100
0
10 20 30 40 50 60
Trigger Pulse Width
ns 80
t
Optical peak power, fall and rise time vs. pulse
width (MOSFET driver Elantec EL7104C)
Optical peak power vs. optical pulse energy
(MOSFET driver Elantec EL7104C)
OHL01653
40
OHL01654
20
W, ns
35
W
30
15
Fall Time
25
20
15
10
5
Peak Power
Rise Time
10
5
0
0
5
10 15 20 25
ns 35
0
0
0.1 0.2 0.3 0.4
Pulse Energy
µJ 0.6
Pulse Width FWHM
2006-04-12
5
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
SPL LL85
Maßzeichnung
Package Outlines
±0.1 (0.004)
±0.1 (0.004)
4.9 (0.193)
2.3 (0.091)
±0.15 (0.006)
1.4 (0.055)
±0.2 (0.008)
1.35 (0.053)
Laser Diode
±0.1 (0.004)
5 (0.197)
1
2
3
±0.1 (0.004)
2.4 (0.094)
Surface
not flat
±0.1 (0.004)
0 (0.000)
±0.1 (0.004)
0 (0.000)
0 (0.000)
±0.1 (0.004)
±0.1 (0.004)
0 (0.000)
VC
2
1
FET
G
D
S
Trigger
VG
C
C
Laser diode
±0.1 (0.004)
0.5 (0.020)
0.6 (0.024)
0.4 (0.016)
3
GND
spacing 2.54 (0.100)
GWOY6123
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2006-04-12
6
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
SPL LL85
Published by
OSRAM Opto Semiconductors GmbH
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly
1
authorized for such purpose! Critical components , may only be used in life-support devices or
systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2006-04-12
7
www.lasercomponents.com
Issue: 04/07 / V1 / HW / osram/ spl-ll85.pdf
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
相关型号：
Q62702X165
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
INFINEON
Q62702X166
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
INFINEON
Q62703-F106
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
INFINEON
Q62703-F107
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
INFINEON
Q62703-F108
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
INFINEON
©2020 ICPDF网 联系我们和版权申明