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Q62703-F97 [INFINEON]

GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz); 砷化镓场效应管（低噪声FMIN = 1.4 dB的4 GHz高增益11.5分贝典型值@ 4千兆赫）
Q62703-F97
型号： Q62703-F97
厂家： Infineon    Infineon
描述：

GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
砷化镓场效应管（低噪声FMIN = 1.4 dB的4 GHz高增益11.5分贝典型值@ 4千兆赫）
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GaAs FET  
CFY 30  
________________________________________________________________________________________________________  
D a t a s h e e t  
* Low noise ( Fmin = 1.4 dB @ 4 GHz )  
* High gain ( 11.5 dB typ. @ 4 GHz )  
* For oscillators up to 12 GHz  
* For amplifiers up to 6 GHz  
* Ion implanted planar structure  
* Chip all gold metallization  
* Chip nitride passivation  
ESD: Electrostatic discharge sensitive device,  
observe handling precautions!  
Type  
Marking  
Ordering code  
(tape and reel)  
Pin Configuration  
Package 1)  
1
2
3
4
CFY 30  
A2  
Q62703-F97 S D S G  
SOT-143  
Maximum ratings  
Symbol  
Value  
Unit  
V
Drain-source voltage  
Drain-gate voltage  
V
5
7
DS  
DG  
GS  
V
V
V
Gate-source voltage  
Drain current  
-4 ... +0.5  
80  
V
I
mA  
°C  
°C  
mW  
D
Channel temperature  
Storage temperature range  
Total power dissipation (TS < 70°C)  
T
T
150  
Ch  
-40...+150  
250  
stg  
2)  
P
tot  
Thermal resistance  
2)  
R
<320  
K/W  
Channel-soldering point  
thChS  
1) Dimensions see chapter Package Outlines  
2) TS is measured on the source 1 lead at the soldering point to the PCB.  
Siemens Aktiengesellschaft  
pg. 1/6  
11.01.1996  
HL EH PD 21  
GaAs FET  
CFY 30  
________________________________________________________________________________________________________  
Electrical characteristics at T = 25°C, unless otherwise specified  
A
Characteristics  
Symbol  
min  
typ  
max  
Unit  
Drain-source saturation current  
I
mA  
DSS  
V = 3.5 V,  
V = 0 V  
20  
-0.5  
20  
-
50  
-1.3  
30  
80  
-4.0  
-
DS  
GS  
Pinch-off voltage  
V
V
GS(P)  
V = 3.5 V  
I = 1 mA  
DS  
D
Transconductance  
g
mS  
µA  
dB  
m
V = 3.5 V  
I = 15 mA  
DS  
D
Gate leakage current  
I
G
V = 3.5 V I = 15 mA  
0.1  
2
DS  
D
Noise figure  
F
-
-
1.4  
2.0  
1.6  
-
V = 3.5 V I = 15 mA  
f = 4 GHz  
f = 6 GHz  
DS  
D
Associated gain  
G
dB  
a
V = 3.5 V I = 15 mA  
f = 4 GHz  
f = 6 GHz  
10  
-
11.5  
8.9  
-
-
DS  
D
Maximum available gain  
MAG  
MSG  
P1 dB  
dB  
dB  
-
-
-
11.2  
14.4  
16  
-
-
-
V = 3.5 V  
I = 15 mA  
f = 6 GHz  
f = 4 GHz  
DS  
D
Maximum stable gain  
V = 3.5 V  
I = 15 mA  
D
DS  
Power output at 1 dB compression  
dBm  
V = 4 V  
I = 30 mA  
f = 6 GHz  
DS  
D
Siemens Aktiengesellschaft  
pg. 2/6  
11.01.1996  
HL EH PD 21  
GaAs FET  
CFY 30  
________________________________________________________________________________________________________  
Typical Common Source Noise Parameters  
I = 15 mA  
V = 3.5 V  
Z = 50 Ω  
0
D
DS  
f
F
G
R
N
-
F
50Ω  
Γ
G(F50  
dB  
)
Ω
min  
a
n
opt  
GHz  
2
4
6
8
dB  
dB  
MAG ANG  
dB  
2.9  
2.7  
2.8  
2.8  
3.4  
4.1  
Ω
1.0 15.5 0.72  
1.4 11.5 0.64  
2.0  
2.5  
3.0  
3.5  
27  
61  
49 0.17  
29 0.17  
10.0  
9.3  
7.5  
6.4  
4.2  
2.9  
8.9  
7.1  
5.8  
5.0  
0.46  
0.31  
101 19 0.30  
153 0.31  
9
10  
12  
0.34 -133 14 0.38  
0.41 -93 28 0.42  
Total Power Dissipation P = f (T ;T )  
tot  
S
A
300  
[ m W ]  
P
tot  
200  
100  
0
TS  
TA  
0
50  
100  
150  
TA ; TS [ °C ]  
Siemens Aktiengesellschaft  
pg. 3/6  
11.01.1996  
HL EH PD 21  
GaAs FET  
CFY 30  
________________________________________________________________________________________________________  
Output characteristics ID = f (VDS)  
50  
=0V  
VGS  
D
I [mA] 40  
V
GS=-0.2V  
VGS=-0.4V  
VGS=-0.6V  
30  
20  
VGS =-0.8V  
VGS =-1.0V  
10  
0
V GS =-1.2V  
GS =-1.4V  
V
0
1
2
3
4
5
DS  
V
[V]  
Siemens Aktiengesellschaft  
pg. 4/6  
11.01.1996  
HL EH PD 21  
GaAs FET  
CFY 30  
________________________________________________________________________________________________________  
Typical Common Source S-Parameters  
I = 15 mA  
U = 3.5 V  
Z0 = 50 Ω  
D
D
f
S11  
Ang  
S21  
Ang  
178  
S12  
Ang  
S22  
Ang  
-1  
GHz  
0.1  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
4.0  
4.4  
4.8  
5.2  
5.6  
6.0  
6.4  
6.8  
7.2  
7.6  
8.0  
8.4  
8.8  
9.2  
9.6  
10.0  
10.4  
10.8  
11.2  
11.6  
12.0  
Mag  
1.00  
Mag  
2.43  
Mag  
0.003  
0.010  
Mag  
0.70  
-1  
-6  
87  
23  
78  
72  
66  
60  
55  
50  
45  
39  
32  
25  
18  
12  
6
1.00  
0.99  
0.98  
0.97  
0.96  
0.93  
0.90  
0.87  
0.83  
0.80  
0.77  
0.74  
0.70  
0.66  
0.63  
0.60  
0.57  
0.55  
0.54  
0.53  
0.54  
0.55  
0.56  
0.57  
0.58  
0.59  
0.60  
0.61  
0.62  
0.62  
2.43  
2.43  
2.43  
2.44  
2.45  
2.47  
2.49  
2.50  
2.50  
2.50  
2.51  
2.49  
2.45  
2.41  
2.36  
2.30  
2.24  
2.19  
2.14  
2.08  
2.00  
1.92  
1.83  
1.72  
1.61  
1.51  
1.42  
1.35  
1.30  
1.25  
171  
162  
154  
145  
137  
129  
120  
111  
102  
93  
0.69  
0.68  
0.67  
0.66  
0.65  
0.64  
0.62  
0.60  
0.57  
0.54  
0.50  
0.46  
0.43  
0.40  
0.36  
0.31  
0.27  
0.24  
0.21  
0.19  
0.18  
0.18  
0.19  
0.21  
0.23  
0.26  
0.29  
0.32  
0.34  
0.36  
-5  
-11  
-15  
-20  
-26  
-30  
-35  
-41  
-47  
-54  
-61  
-67  
-73  
-80  
-88  
-98  
-110  
-122  
-137  
-154  
-173  
171  
155  
141  
128  
118  
108  
100  
93  
-14  
-21  
-28  
-36  
-44  
-53  
-62  
-72  
-82  
-92  
-104  
-115  
-127  
-139  
-150  
-162  
-174  
172  
160  
147  
135  
124  
114  
106  
98  
0.020  
0.030  
0.040  
0.050  
0.058  
0.066  
0.074  
0.082  
0.090  
0.097  
0.103  
0.108  
0.112  
0.114  
0.115  
0.116  
0.116  
0.116  
0.115  
0.113  
0.111  
0.109  
0.107  
0.104  
0.102  
0.101  
0.099  
0.098  
0.096  
83  
73  
64  
54  
45  
0
37  
-6  
27  
-11  
-17  
-22  
-27  
-32  
-37  
-42  
-46  
-50  
-53  
-56  
-58  
-60  
-63  
17  
8
-2  
-11  
-21  
-30  
-40  
-48  
-56  
-62  
-69  
-75  
-81  
91  
85  
79  
74  
85  
Siemens Aktiengesellschaft  
pg. 5/6  
11.01.1996  
HL EH PD 21  
GaAs FET  
CFY 30  
________________________________________________________________________________________________________  
Typical Common Source S-Parameters  
I = 30 mA  
U = 3.5 V  
Z0 = 50 Ω  
D
D
f
S11  
S21  
S12  
Ang  
S22  
GHz  
0.1  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
4.0  
4.4  
4.8  
5.2  
5.6  
6.0  
6.4  
6.8  
7.2  
7.6  
8.0  
8.4  
8.8  
9.2  
9.6  
10.0  
10.4  
10.8  
11.2  
11.6  
12.0  
Mag  
1.00  
1.00  
0.99  
0.97  
0.95  
0.92  
0.90  
0.87  
0.83  
0.79  
0.75  
0.71  
0.67  
0.63  
0.60  
0.57  
0.54  
0.52  
0.51  
0.50  
0.50  
0.51  
0.52  
0.54  
0.55  
0.57  
0.59  
0.60  
0.61  
0.62  
0.62  
Ang  
Mag  
3.23  
3.21  
3.19  
3.18  
3.17  
3.17  
3.17  
3.17  
3.16  
3.12  
3.08  
3.04  
3.00  
2.95  
2.87  
2.77  
2.68  
2.58  
2.50  
2.43  
2.36  
2.26  
2.15  
2.04  
1.93  
1.82  
1.71  
1.60  
1.51  
1.44  
1.38  
Ang  
178  
171  
162  
153  
143  
135  
127  
119  
109  
99  
Mag  
Mag  
0.71  
0.70  
0.69  
0.67  
0.66  
0.65  
0.63  
0.61  
0.58  
0.55  
0.52  
0.50  
0.47  
0.43  
0.38  
0.34  
0.30  
0.27  
0.24  
0.21  
0.18  
0.16  
0.16  
0.17  
0.19  
0.22  
0.25  
0.27  
0.30  
0.32  
0.34  
Ang  
-1  
-2  
-8  
0.002  
0.009  
0.017  
0.025  
0.034  
0.042  
0.051  
0.059  
0.067  
0.073  
0.079  
0.084  
0.089  
0.092  
0.094  
0.096  
0.097  
0.098  
0.099  
0.099  
0.099  
0.099  
0.099  
0.099  
0.099  
0.099  
0.100  
0.101  
0.102  
0.103  
0.104  
85  
79  
73  
70  
65  
61  
56  
50  
45  
40  
34  
28  
21  
15  
10  
4
-6  
-16  
-24  
-32  
-40  
-48  
-58  
-68  
-79  
-91  
-102  
-114  
-126  
-138  
-150  
-162  
-174  
173  
160  
147  
135  
125  
115  
107  
99  
-11  
-16  
-21  
-26  
-31  
-36  
-42  
-48  
-54  
-60  
-66  
-73  
-81  
-89  
-99  
-109  
-121  
-134  
-148  
-164  
176  
158  
142  
128  
118  
109  
100  
92  
88  
78  
68  
58  
49  
40  
31  
-1  
22  
-6  
14  
-11  
-16  
-20  
-24  
-29  
-33  
-37  
-41  
-44  
-47  
-49  
-52  
-55  
5
-4  
-13  
-22  
-30  
-39  
-47  
-54  
-62  
-69  
-75  
-82  
91  
85  
79  
73  
68  
85  
Siemens Aktiengesellschaft  
pg. 6/6  
11.01.1996  
HL EH PD 21  

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