Q62703-F108 [INFINEON]
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization); 砷化镓场效应管（低噪声高增益前端放大器LON注入平面结构全部镀金）
| 型号： | Q62703-F108 |
| 厂家： | 
Infineon |
| 描述： | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| 文件： | 总6页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs FET
CFY 25
● Low noise
● High gain
● For front-end amplifiers
● lon-implanted planar structure
● All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Package1)
Micro-X
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
4
CFY 25-17
CFY 25-20
CFY 25-23
C 5
C 6
C 7
Q62703-F106
Q62703-F107
Q62703-F108
D
S
G
S
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
Drain-gate voltage
V
DS
DG
GS
5
V
V
V
7
Gate-source voltage
Drain current
– 5 … + 0
80
ID
mA
mW
˚C
Total power dissipation, TS ≤ 56 ˚C2)
Channel temperature
Storage temperature range
P
tot
250
T
ch
150
Tstg
– 65 … + 150
Thermal Resistance
Channel - soldering point2)
Rth chS
375
K/W
1)
For detailed information see chapter Package Outlines.
TS is measured on the source lead at the soldering point to the pcb.
2)
07.94
Semiconductor Group
1
CFY 25
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
Drain-source saturation current
I
DSS
15
30
60
mA
V
VDS = 3 V, VGS = 0
Pinch-off voltage
= 1 mA, VDS = 3 V
V
p
– 0.3 – 1.0 – 3.0
ID
Gate leakage current
= 15 mA, VDS = 3 V
I
G
–
0.1
40
2
–
µA
mS
dB
ID
Transconductance
= 15 mA, VDS = 3 V
g
m
30
ID
Noise figure
F
I
DS = 15 mA, VDS = 3 V, f= 12 GHz CFY 25-17
–
–
–
1.6
1.9
2.2
1.7
2.0
2.3
CFY 25-20
CFY 25-23
Associated gain
Ga
I
DS = 15 mA, VDS = 3 V, f= 12 GHz CFY 25-17
9
8.5
8.5
9.5
9
9
–
–
–
CFY 25-20
CFY 25-23
Semiconductor Group
2
CFY 25
Total power dissipation Ptot = f (T
S
; T
A*)
Output characteristics I = f (VDS)
D
* Package mounted on alumina
Transfer characteristics I
D
= f (V )
G
VDS = 3 V
Semiconductor Group
3
CFY 25
Common Source Noise Parameters
Γ
opt
f
Fmin
Ga
RN
rN
N
F
50 Ω
G(F50 Ω)
GHz
dB
dB
MAG
ANG
Ω
–
–
dB
dB
ID
= 15 mA, VDS = 3.0 V, Z
0
= 50 Ω
2
4
6
0.60
0.77
1.00
1.25
1.55
1.77
2.15
18.5
14.6
12.4
11.0
9.8
0.70
0.59
0.50
0.47
0.45
0.43
0.41
31 29
63 21
0.580
0.420
0.260
0.146
0.112
0.142
0.360
0.10
0.14
0.19
0.23
0.28
0.29
0.46
2.0
1.8
1.8
2.0
2.4
2.5
3.0
11.4
10.5
9.3
8.2
7.3
103 13
140 7.3
174 5.6
– 156 7.1
– 130 18
8
10
12
14
9.0
8.1
6.4
5.8
Source impedance for min. noise figure
= 15 mA, VDS = 3 V
Circles of constant noise figure
= 15 mA, VDS = 3 V, f = 12 GHz
ID
ID
Semiconductor Group
4
CFY 25
Minimum noise figure Fmin = f (f)
Associated gain G = f (f)
Minimum noise figure Fmin = f (I
Associated gain G = f (I
D)
a
a
D
)
I
D
= 15 mA, VDS = 3 V, ZSopt
VDS = 3 V, f = 12 GHz, ZSopt
Semiconductor Group
5
CFY 25
Common Source S Parameters
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
ID
= 15 mA, VDS = 3 V, Z = 50 Ω
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.99
0.96
0.91
0.86
0.81
0.77
0.74
0.70
0.68
0.67
0.67
0.66
0.66
0.66
0.66
0.66
0.66
0.66
– 21
– 42
– 67
– 87
– 107
– 125
– 145
– 165
178
161
146
132
117
3.83
3.73
3.55
3.34
3.10
2.92
2.74
2.57
2.42
2.31
2.20
2.10
2.02
1.94
1.90
1.84
1.80
1.78
161
141
121
103
86
70
54
37
23
0.026
0.049
0.069
0.083
0.093
0.100
0.105
0.107
0.108
0.109
0.110
0.110
0.110
0.112
0.115
0.119
0.125
0.132
75
61
45
33
21
0.68
0.66
0.63
0.59
0.56
0.52
0.48
0.45
0.42
0.41
0.39
0.37
0.36
0.35
0.34
0.33
0.32
0.31
– 13
– 27
– 41
– 55
– 66
– 77
– 89
– 102
– 112
– 124
– 134
– 145
– 158
– 169
180
11
1
– 9
– 17
– 24
– 30
– 36
– 42
– 49
– 55
– 63
– 72
– 83
9
– 4
– 17
– 31
– 44
– 57
– 70
– 84
– 99
103
90
77
63
165
151
136
47
S11, S22
S12, S21
ID
= 15 mA, VDS = 3 V, Z
0
= 50 Ω
ID
= 15 mA, VDS = 3 V, Z
0
= 50 Ω
Semiconductor Group
6
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