概述
数据手册SFH4219 概述
GaAs Infrared Emitter in SMT Package with lens 砷化镓红外发射器的SMT封装带透镜
SFH4219 数据手册
通过下载SFH4219数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载GaAs-IR-Lumineszenzdiode in SMT-Gehäuse mit Linse
GaAs Infrared Emitter in SMT Package with lens
SFH 4219
Wesentliche Merkmale
Features
• TOPLED mit Linse
• TOPLED with lens
• GaAs-LED mit sehr hohem Wirkungsgrad
• Gute Linearität (Ie = f [IF]) bei hohen Strömen
• Gleichstrom- (mit Modulation) oder
Impulsbetrieb möglich
• Very highly efficient GaAs-LED
• Good Linearity (Ιe = f [IF]) at high currents
• DC (with modulation) or pulsed operations are
possible
• Hohe Zuverlässigkeit
• High reliability
• Hohe Impulsbelastbarkeit
• Oberflächenmontage geeignet
• Gegurtet lieferbar
• High pulse handling capability
• Suitable for surface mounting (SMT)
• Available on tape and reel
• SFH 4219 same package as SFH 3219
• SFH 4219 Gehäusegleich mit SFH 3219
Anwendungen
Applications
• Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb, Lochstreifenleser
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Automobiltechnik
• Miniature photointerrupters
• Industrial electronics
• For drive and control circuits
• Automotive technology
• Sensor technology
• Sensorik
• Alarm- und Sicherungssysteme
• IR-Freiraumübertragung
• Alarm and safety equipment
• IR free air transmission
Typ
Type
Bestellnummer
Ordering Code
Gehäuse
Package
Kathodenkennzeichnung: abgesetzte Ecke
cathode marking: bevelled edge
TOPLED
SFH 4219
Q62702 P5410
2001-09-07
1
SFH 4219
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 40 … + 100
°C
Operating and storage temperature range
Sperrspannung
Reverse voltage
VR
5
V
Durchlaßstrom
Forward current
IF
100
3
mA
A
Stoßstrom, τ = 10 µs, D = 0
Surge current
IFSM
Ptot
Verlustleistung
Power dissipation
160
450
mW
K/W
Wärmewiderstand Sperrschicht - Umgebung bei RthJA
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
RthJS
200
K/W
Thermal resistance junction - soldering point,
mounted on metal block
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak
950
nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA
∆λ
55
nm
Abstrahlwinkel
Half angle
ϕ
± 25
Grad
deg.
Aktive Chipfläche
Active chip area
0.09
mm2
A
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
L × B
L × W
0.3 × 0.3
mm
2001-09-07
2
SFH 4219
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Schaltzeiten, Ιe von 10% auf 90% und von 90% tr, tf
auf 10%, bei IF = 100 mA, RL = 50 Ω
0.5
µs
Switching times, Ιe from 10% to 90% and from
90% to10%, IF = 100 mA, RL = 50 Ω
Kapazität,
Co
25
pF
Capacitance
VR = 0 V, f = 1 MHz
Durchlaßspannung,
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.3 (≤ 1.5)
1.9 (≤ 2.5)
V
V
Sperrstrom,
Reverse current
VR = 5 V
IR
0.01 (≤ 1)
µA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe
TCI
14
mW
%/K
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
– 0.55
Temperature coefficient of Ie or Φe,
IF = 100 mA
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV
TCλ
– 1.5
mV/K
nm/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA
+ 0.3
2001-09-07
3
SFH 4219
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter
Symbol
Werte
Values
Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Iemin
Ietyp
4
13
mW/sr
mW/sr
Strahlstärke
Ie typ.
90
mW/sr
Radiant intensity
IF = 1 A, tp = 100 µs
Radiation Characteristics
Srel = f (ϕ)
40
30
20
10
0
OHL00732
1.0
ϕ
50˚
0.8
0.6
0.4
60˚
70˚
0.2
0
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
2001-09-07
4
SFH 4219
Ιe
= f (IF)
Relative Spectral Emission
Irel = f (λ)
Radiant Intensity
Permissible Pulse Handling
Capability IF = f (tp), duty cycle
Ιe 100 mA
Single pulse, tp = 20 µs
D = parameter, TA = 20 °C
OHR00864
OHR01938
10 4
OHR00865
100
%
Ιe
Ιe (100 mA)
τ
mA
Ι F
10 1
τ
T
Ι F
D
Ι rel
=
5
80
T
D
0.005
0.01
=
60
40
20
0
0.02
0.05
10 3
5
0.1
0.2
10 0
0.5
DC
10 -1
10 2
10 -2
10 -1
10 0
A
Ι F
10 1
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
880
920
960
1000
nm
1060
τ
λ
Forward Current
Max. Permissible Forward Current
Zusätzliche
allgemeine
Informationen
über
IF = f (VF), single pulse, tp = 20 µs
IF = f (TA)
Lötbedingungen
OHR01554
OHR00883
10 1
erhalten Sie auf Anfrage.
120
mA
A
Ι F
For additional information on general
Ι F
100
soldering
conditions
please
10 0
10 -1
10 -2
10 -3
contact us.
80
RthjA = 450 K/W
60
40
20
0
0
20
40
60
80
100 ˚C 120
0
1
2
3
4
5
6
V
8
VF
TA
2001-09-07
5
SFH 4219
Maßzeichnung
Package Outlines
3.5 (0.138) max.
2.1 (0.083)
1.7 (0.067)
3.0 (0.118)
2.6 (0.102)
2.3 (0.091)
0.9 (0.035)
2.1 (0.083)
1
0.7 (0.028)
2
0.6 (0.024)
0.4 (0.016)
Package
marking
0.1 (0.004) (typ.)
0.18 (0.007)
0.13 (0.005)
GEOY6956
Maße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified.
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2001-09-07
6
SFH4219 相关器件
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|
| SFH4232A | OSRAM | High Power Infrared Emitter (850 nm) | 获取价格 |
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| SFH4232_15 | OSRAM | High Power Infrared Emitter | 获取价格 |
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| SFH4233 | OSRAM | IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung | 获取价格 |
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