SPLLL85 [OSRAM]

Hybride Impuls-Laserdiode mit integrierter Treiberstufe 14 W Spitzenleistung; 杂合体IMPULS - Laserdiode MIT integrierter Treiberstufe 14瓦Spitzenleistung
SPLLL85
型号: SPLLL85
厂家: OSRAM GMBH    OSRAM GMBH
描述:

Hybride Impuls-Laserdiode mit integrierter Treiberstufe 14 W Spitzenleistung
杂合体IMPULS - Laserdiode MIT integrierter Treiberstufe 14瓦Spitzenleistung

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Hybride Impuls-Laserdiode mit integrierter Treiberstufe 14 W Spitzenleistung  
Hybrid Pulsed Laser Diode with Integrated Driver Stage 14 W Peak Power  
Lead (Pb) Free Product - RoHS Compliant  
SPL LL85  
Besondere Merkmale  
Features  
• Kleines kostengünstiges Plastik-Gehäuse  
• Integriert sind ein FET und Kondensatoren zur  
Impulsansteuerung  
• InAlGaAs/GaAs kompressiv verspannte  
Quantenfilmstruktur  
• Low cost, small size plastic package  
• Integrated FET and capacitors for pulse control  
• Strained InAlGaAs/GaAs QW-structures  
• High power large-optical-cavity laser structure  
• Laser aperture 200 µm x 2 µm  
• Hochleistungslaser mit „Large-Optical-Cavity“  
(LOC) Struktur  
• High-speed operation (< 30 ns pulse width)  
• Low supply voltage (< 9 V)  
• Laserapertur 200 µm x 2 µm  
• Schneller Betrieb (< 30 ns Impulsbreite)  
• Niedrige Versorgungsspannung (< 9 V)  
Applications  
• Range finding  
• Security, surveillance  
• Illumination, ignition  
• Testing and measurement  
Anwendungen  
• Entfernungsmessung  
• Sicherheit, Überwachung  
• Beleuchtung, Zündung  
• Test- und Messsysteme  
Safety advices  
Depending on the mode of operation, these  
devices emit highly concentrated non visible  
infrared light which can be hazardous to the  
Sicherheitshinweise  
Je nach Betriebsart emittieren diese Bauteile human eye. Products which incorporate these  
hochkonzentrierte, nicht sichtbare Infrarot- devices have to follow the safety precautions  
Strahlung, die gefährlich für das menschliche given in IEC 60825-1 “Safety of laser products”.  
Auge sein kann. Produkte, die diese Bauteile  
enthalten, müssen gemäß den Sicherheits-  
richtlinien der IEC-Norm 60825-1 behandelt  
werden.  
Typ  
Type  
Opt. Spitzenausgangsleistung Wellenlänge  
Bestellnummer  
Ordering Code  
Opt. Peak Power  
Wavelength  
SPL LL85  
2006-04-12  
14 W  
850 nm  
Q62702P3558  
1
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com  
SPL LL85  
Grenzwerte (kurzzeitiger Betrieb) (TA = 25 °C)  
Maximum Ratings (short time operation)  
Parameter  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
min.  
max.  
Spitzenausgangsleistung  
Peak output power  
Popt  
VC  
18  
W
V
Ladespannung (VG = 15 V)  
Charge voltage (VG = 15 V)  
9
Gate-Spannung  
Gate voltage  
VG  
– 20  
+ 20  
0.1  
V
Tastverhältnis  
Duty cycle  
%
°C  
°C  
°C  
d.c.  
Top  
Tstg  
Ts  
Betriebstemperatur  
Operating temperature  
- 40  
- 40  
+ 85  
+ 100  
+ 260  
Lagertemperatur  
Storage temperature  
Löttemperatur (tmax = 10 s)  
Soldering temperature (tmax = 10 s)  
2006-04-12  
2
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com  
SPL LL85  
Optische Kennwerte (TA = 25 °C)  
Optical Characteristics  
Parameter  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
min.  
typ.  
max.  
Zentrale Emissionswellenlänge1)  
Emission wavelength1)  
Spektralbreite (Halbwertsbreite)1)  
Spectral width (FWHM)1)  
Spitzenausgangsleistung1)  
Peak output power1)  
λ
840  
850  
860  
nm  
nm  
W
∆λ  
Popt  
UC, th  
tp  
4
9
12  
1.2  
25  
14  
1.5  
28  
18  
2.0  
31  
Ladespannung an der Laserschwelle  
Charge Voltage at laser threshold  
Pulsbreite (Halbwertsbreite)1), 2)  
Pulse width (FWHM)1), 2)  
V
ns  
Anstiegs- und Abfallzeit (10% … 90%)1), 2)  
Rise and fall time (10% … 90%)1), 2)  
tr,  
tf  
7.0  
26  
9.5  
29  
12.0  
32  
ns  
ns  
Austrittsöffnung  
Aperture size  
w × h  
200 × 2  
µm2  
Strahldivergenz (Halbwertsbreite) parallel zum  
pn-Übergang1)  
θ||  
12  
15  
18  
Grad  
deg.  
Beam divergence (FWHM) parallel to pn junction1)  
Strahldivergenz (Halbwertsbreite) senkrecht zum θ⊥  
pn-Übergang1)  
27  
30  
33  
Grad  
deg.  
Beam divergence (FWHM) perpendicular to  
pn-junction1)  
Temperaturkoeffizient der Wellenlänge  
Temperature coefficient of wavelength  
∂λ / T  
0.25  
200  
4.5  
0.32  
nm/K  
K/W  
V
Thermischer Widerstand  
Thermal resistance  
Rth  
Einschaltpunkt der Gate-Spannung  
Switch on gate voltage  
VG on  
1)  
Werte beziehen sich auf folgende Standardbetriebsbedingung: >40ns Trigger-Pulsbreite, 1kHz Pulswiederholrate, 6.7V  
Ladespannung, 15V Gate-Spannung und 25°C Umgebungstemperatur. Der Laser wird angesteuert mit dem MOSFET-Treiber Elantec  
EL7104C.  
Values refer to the following standard operating conditions: >40ns trigger pulse width, 1kHz pulse repetition rate, 6.7V charge voltage,  
15V gate voltage and 25 °C ambient temperature. The laser is driven by the MOSFET driver Elantec EL7104C.  
Die Schaltgeschwindigkeit ist abhängig von Strom und Geschwindigkeit, mit der die Gate-Kapazität (typ. 300pF) des internen  
Transistors geladen wird. Kürzere Pulsbreiten, Anstiegs- und Abfallzeiten erhält man bei Trigger-Pulsbreiten <40ns. Dies bewirkt  
jedoch auch eine reduzierte optische Spitzenleistung (siehe Diagramme auf Seite 5).  
2)  
Switching speed at gate depends on current and speed, charging the gate capacitance (typ. 300pF) of the internal transistor. Reduced  
pulse widths, rise and fall times occur at trigger pulse widths <40ns. This also reduces the optical peak power (see diagrams on page 5).  
2006-04-12  
3
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com  
SPL LL85  
Optical output power Popt vs charge voltage Vc  
(tp = 30 ns, PRF = 1 kHz, VG = 15 V )  
Optical spectrum, relative intensity Irel vs.  
wavelength λ (Popt = 14 W, tp = 30 ns)  
OHW00919  
OHW00917  
1.00  
%
20  
W
Ιrel  
P
opt  
0.75  
0.50  
15  
10  
5
0.25  
0
0
0
1
2
3
4
5
6
7
V
9
830 835 840 845 850 855 nm 865  
VC  
λ
Far-field distribution parallel to junction  
Far-field distribution perpendicular to  
Irel vs. angle θ||  
junction Irel vs. angle θ⊥  
OHW00795  
OHW00794  
1.00  
1.00  
0.75  
0.50  
0.25  
0
Ιrel  
Ιrel  
0.75  
0.50  
0.25  
0
-30 -20 -10  
0
10  
Deg 30  
-50  
-30  
-10  
10  
30 Deg 50  
θ
θ
2006-04-12  
4
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com  
SPL LL85  
Optical pulse form for variing trigger pulse  
widths (MOSFET driver Elantec EL7104C)  
Optical pulse width vs. trigger pulse width  
(MOSFET driver Elantec EL7104C)  
OHL01651  
OHL01652  
20  
35  
ns  
30  
W
15  
25  
20  
15  
10  
5
20 ns  
15 ns  
10 ns  
6 ns  
5 ns  
4.5 ns  
4 ns  
80 ns  
40 ns  
30 ns  
25 ns  
10  
5
0
0
0
50  
ns 100  
0
10 20 30 40 50 60  
Trigger Pulse Width  
ns 80  
t
Optical peak power, fall and rise time vs. pulse  
width (MOSFET driver Elantec EL7104C)  
Optical peak power vs. optical pulse energy  
(MOSFET driver Elantec EL7104C)  
OHL01653  
40  
OHL01654  
20  
W, ns  
35  
W
30  
15  
Fall Time  
25  
20  
15  
10  
5
Peak Power  
Rise Time  
10  
5
0
0
5
10 15 20 25  
ns 35  
0
0
0.1 0.2 0.3 0.4  
Pulse Energy  
µJ 0.6  
Pulse Width FWHM  
2006-04-12  
5
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com  
SPL LL85  
Maßzeichnung  
Package Outlines  
±0.1 (0.004)  
±0.1 (0.004)  
4.9 (0.193)  
2.3 (0.091)  
±0.15 (0.006)  
1.4 (0.055)  
±0.2 (0.008)  
1.35 (0.053)  
Laser Diode  
±0.1 (0.004)  
5 (0.197)  
1
2
3
±0.1 (0.004)  
2.4 (0.094)  
Surface  
not flat  
±0.1 (0.004)  
0 (0.000)  
±0.1 (0.004)  
0 (0.000)  
0 (0.000)  
±0.1 (0.004)  
±0.1 (0.004)  
0 (0.000)  
VC  
2
1
FET  
G
D
S
Trigger  
VG  
C
C
Laser diode  
±0.1 (0.004)  
0.5 (0.020)  
0.6 (0.024)  
0.4 (0.016)  
3
GND  
spacing 2.54 (0.100)  
GWOY6123  
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).  
2006-04-12  
6
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com  
SPL LL85  
Published by  
OSRAM Opto Semiconductors GmbH  
© All Rights Reserved.  
The information describes the type of component and shall not be considered as assured characteristics.  
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain  
dangerous substances. For information on the types in question please contact our Sales Organization.  
Packing  
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.  
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing  
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs  
incurred.  
Components used in life-support devices or systems must be expressly  
1
authorized for such purpose! Critical components , may only be used in life-support devices or  
systems 2 with the express written approval of OSRAM OS.  
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected  
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.  
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain  
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.  
2006-04-12  
7
www.lasercomponents.com  
Issue: 04/07 / V1 / HW / osram/ spl-ll85.pdf  
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com  

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