2SD1992A-SZ [PANASONIC]
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,;
| 型号： | 2SD1992A-SZ |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, |
| 文件： | 总3页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
2SD1992A
Silicon NPN epitaxial planer type
Unit: mm
6.9 0.1
4.0
2.5 0.1
1.05
0.05
For general amplification
(1.45)
0.8
0.7
Complementary to 2SB1321A
I Features
0.65 max.
• Low collector to emitter saturation voltage VCE(sat)
• Allowing supply with the radial taping
0.45+−00..015
2.5 0.5 2.5 0.5
I Absolute Maximum Ratings Ta = 25°C
1
2
3
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCEO
VEBO
ICP
Rating
Unit
V
60
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
50
V
7
V
MT1 Type Package
1
500
A
IC
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
600
Tj
150
1.2 0.1
Tstg
−55 to +150
0.65
max.
+
0.1
0.45−0.05
(HW Type)
I Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
ICBO
Conditions
Min
Typ
Max
0.1
1
Unit
µA
µA
V
Collector cutoff current
VCB = 20 V, IE = 0
ICEO
VCE = 20 V, IB = 0
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
IC = 10 µA, IE = 0
60
50
7
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
V
2
1
*
Forward current transfer ratio
hFE1
hFE2
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 500 mA
IC = 300 mA, IB = 30 mA
VCB = 10 V, IE = −10 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
85
40
340
0.6
15
*
90
0.35
200
6
1
Collector to emitter saturation voltage *
VCE(sat)
fT
V
MHz
pF
Transition frequency
Collector output capacitance
Cob
Note) 1: Pulse measurement
*
2: Rank classification
*
Rank
Q
R
S
No-rank
hFE1
85 to 170
120 to 240
170 to 340
85 to 340
Product of no-rank is not classified and have no indication for rank.
1
2SD1992A
Transistors
PC Ta
IC VCE
IC IB
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
Ta = 25°C
VCE = 10 V
Ta = 25°C
IB = 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
0
2
4
6
8
10 12 14 16 18 20
0
1
2
3
4
5
6
7
8
)
9 10
0
20 40 60 80 100 120 140 160
( )
V
(
Collector to emitter voltage VCE
Base current IB mA
(
)
Ambient temperature Ta °C
VCE(sat) IC
VBE(sat) IC
hFE IC
100
100
300
250
200
150
100
50
IC / IB = 10
IC / IB = 10
VCE = 10 V
30
10
30
10
Ta = 75°C
25°C
3
1
3
1
25°C
−25°C
Ta = 75°C
−25°C
Ta = 75°C
0.3
0.1
0.3
0.1
25°C
−25°C
0.03
0.01
0.03
0.01
0
0.01 0.03 0.1 0.3
1
3
10
0.01 0.03 0.1 0.3
1
3
10
0.01 0.03 0.1 0.3
1
3
10
( )
A
( )
Collector current IC A
( )
A
Collector current IC
Collector current IC
fT IE
Cob VCB
VCER RBE
120
100
80
60
40
20
0
240
200
160
120
80
12
10
8
IE = 0
f = 1 MHz
Ta = 25°C
IC = 2 mA
Ta = 25°C
VCB = 10 V
Ta = 25°C
6
4
40
2
0
0
1
3
10
30
100 300 1000
−1 −2 −3 −5 −10 −20−30 −50 −100
1
2
3
5
10
( )
Collector to base voltage VCB V
20 30 50 100
(
)
(
)
Base to emitter resistance RBE kΩ
Emitter current IE mA
2
Transistors
2SD1992A
ICEO Ta
104
103
102
10
1
VCE = 10 V
0
20 40 60 80 100 120 140 160 180 200
(
)
Ambient temperature Ta °C
3
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